AU2013289151A1 - High efficiency solar cell structures and manufacturing methods - Google Patents

High efficiency solar cell structures and manufacturing methods Download PDF

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Publication number
AU2013289151A1
AU2013289151A1 AU2013289151A AU2013289151A AU2013289151A1 AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1 AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1
Authority
AU
Australia
Prior art keywords
layer
metal
emitter
cell
backplane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2013289151A
Other languages
English (en)
Inventor
Jay Ashjaee
Anthony Calcaterra
David Dutton
Pawan Kapur
Karl-Josef Kramer
Mehrdad M. Moslehi
Virendra V. Rana
Sean M. Seutter
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of AU2013289151A1 publication Critical patent/AU2013289151A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AU2013289151A 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods Abandoned AU2013289151A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261619300P 2012-04-02 2012-04-02
US61/619,300 2012-04-02
PCT/US2013/035029 WO2014011260A2 (fr) 2012-04-02 2013-04-02 Structures de cellule solaire haute performance et procédés de fabrication

Publications (1)

Publication Number Publication Date
AU2013289151A1 true AU2013289151A1 (en) 2014-11-13

Family

ID=49916638

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2013289151A Abandoned AU2013289151A1 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Country Status (3)

Country Link
JP (1) JP2015516145A (fr)
AU (1) AU2013289151A1 (fr)
WO (1) WO2014011260A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10164131B2 (en) * 2014-12-19 2018-12-25 Sunpower Corporation Multi-layer sputtered metal seed for solar cell conductive contact
FR3050870B1 (fr) * 2016-04-28 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter
CN112466967B (zh) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 一种选择性发射极太阳能电池及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313396B1 (en) * 2000-05-22 2001-11-06 The Boeing Company Lightweight solar module and method of fabrication
JP2005317779A (ja) * 2004-04-28 2005-11-10 Toyota Motor Corp 光電変換素子
JP2008052767A (ja) * 2006-08-22 2008-03-06 Sony Corp 記録装置および記録方法、並びにプログラム
WO2008125543A2 (fr) * 2007-04-17 2008-10-23 Interuniversitair Microelektronica Centrum (Imec) Procédé de réduction de l'épaisseur de substrats
WO2008157577A2 (fr) * 2007-06-18 2008-12-24 E-Cube Technologies, Inc. Procédés et appareils pour améliorer l'extraction d'énergie de piles solaires
JP5252472B2 (ja) * 2007-09-28 2013-07-31 シャープ株式会社 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
DE102009014348A1 (de) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Leichtes, biegesteifes und selbsttragendes Solarmodul sowie ein Verfahren zu dessen Herstellung
EP2404317A4 (fr) * 2009-03-06 2014-06-11 Solexel Inc Procédé de fabrication d'un substrat à couche mince
JP2011054831A (ja) * 2009-09-03 2011-03-17 Sharp Corp バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール
CN102714235B (zh) * 2010-01-22 2015-01-14 夏普株式会社 带布线板的太阳能电池单元及其制造方法
EP2577750A4 (fr) * 2010-05-27 2014-04-09 Solexel Inc Traitement laser pour fabrication de cellules solaires en silicium cristallin mince à efficacité élevée
WO2012021880A2 (fr) * 2010-08-13 2012-02-16 Solexel, Inc. Appareil et procédé de fabrication répétée de substrats semi-conducteurs à couches minces au moyen d'un gabarit
US8772076B2 (en) * 2010-09-03 2014-07-08 Solopower Systems, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell

Also Published As

Publication number Publication date
WO2014011260A3 (fr) 2014-04-10
JP2015516145A (ja) 2015-06-08
WO2014011260A2 (fr) 2014-01-16

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Legal Events

Date Code Title Description
MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted