AU2013289151A1 - High efficiency solar cell structures and manufacturing methods - Google Patents

High efficiency solar cell structures and manufacturing methods Download PDF

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Publication number
AU2013289151A1
AU2013289151A1 AU2013289151A AU2013289151A AU2013289151A1 AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1 AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A AU2013289151 A AU 2013289151A AU 2013289151 A1 AU2013289151 A1 AU 2013289151A1
Authority
AU
Australia
Prior art keywords
layer
metal
emitter
cell
backplane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2013289151A
Other languages
English (en)
Inventor
Jay Ashjaee
Anthony Calcaterra
David Dutton
Pawan Kapur
Karl-Josef Kramer
Mehrdad M. Moslehi
Virendra V. Rana
Sean M. Seutter
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of AU2013289151A1 publication Critical patent/AU2013289151A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AU2013289151A 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods Abandoned AU2013289151A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261619300P 2012-04-02 2012-04-02
US61/619,300 2012-04-02
PCT/US2013/035029 WO2014011260A2 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Publications (1)

Publication Number Publication Date
AU2013289151A1 true AU2013289151A1 (en) 2014-11-13

Family

ID=49916638

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2013289151A Abandoned AU2013289151A1 (en) 2012-04-02 2013-04-02 High efficiency solar cell structures and manufacturing methods

Country Status (3)

Country Link
JP (1) JP2015516145A (OSRAM)
AU (1) AU2013289151A1 (OSRAM)
WO (1) WO2014011260A2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2024339215A1 (en) * 2024-04-28 2025-11-13 Longi Green Energy Technology Co., Ltd. Solar cell and photovoltaic module

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10164131B2 (en) * 2014-12-19 2018-12-25 Sunpower Corporation Multi-layer sputtered metal seed for solar cell conductive contact
FR3050870B1 (fr) * 2016-04-28 2018-05-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d’un dispositif de detection de rayonnement electromagnetique comportant une couche en un materiau getter
CN112466967B (zh) * 2020-11-23 2023-08-22 浙江晶科能源有限公司 一种选择性发射极太阳能电池及其制备方法
CN118431324A (zh) * 2024-04-30 2024-08-02 晶科能源(上饶)有限公司 太阳能电池、光伏组件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6313396B1 (en) * 2000-05-22 2001-11-06 The Boeing Company Lightweight solar module and method of fabrication
JP2005317779A (ja) * 2004-04-28 2005-11-10 Toyota Motor Corp 光電変換素子
JP2008052767A (ja) * 2006-08-22 2008-03-06 Sony Corp 記録装置および記録方法、並びにプログラム
WO2008125543A2 (en) * 2007-04-17 2008-10-23 Interuniversitair Microelektronica Centrum (Imec) Method for reducing the thickness of substrates
WO2008157577A2 (en) * 2007-06-18 2008-12-24 E-Cube Technologies, Inc. Methods and apparatuses for improving power extraction from solar cells
JP5252472B2 (ja) * 2007-09-28 2013-07-31 シャープ株式会社 太陽電池、太陽電池の製造方法、太陽電池モジュールの製造方法および太陽電池モジュール
DE102009014348A1 (de) * 2008-06-12 2009-12-17 Bayer Materialscience Ag Leichtes, biegesteifes und selbsttragendes Solarmodul sowie ein Verfahren zu dessen Herstellung
EP2404317A4 (en) * 2009-03-06 2014-06-11 Solexel Inc PROCESS FOR DISPOSING A THIN-FILM SUBSTRATE
JP2011054831A (ja) * 2009-09-03 2011-03-17 Sharp Corp バックコンタクト型太陽電池セル、太陽電池ストリングおよび太陽電池モジュール
WO2011090169A1 (ja) * 2010-01-22 2011-07-28 シャープ株式会社 裏面電極型太陽電池セル、配線シート、配線シート付き太陽電池セル、太陽電池モジュールおよび配線シート付き太陽電池セルの製造方法
KR101289787B1 (ko) * 2010-05-27 2013-07-26 솔렉셀, 인크. 고효율 박형 결정질 실리콘 태양전지 제조를 위한 레이저 가공방법
KR101289789B1 (ko) * 2010-08-13 2013-07-26 솔렉셀, 인크. 기판을 이용한 박막 반도체 기재의 반복 가공 장치 및 방법
US8772076B2 (en) * 2010-09-03 2014-07-08 Solopower Systems, Inc. Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells
US20120073650A1 (en) * 2010-09-24 2012-03-29 David Smith Method of fabricating an emitter region of a solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2024339215A1 (en) * 2024-04-28 2025-11-13 Longi Green Energy Technology Co., Ltd. Solar cell and photovoltaic module
AU2024339215B2 (en) * 2024-04-28 2026-01-29 Longi Green Energy Technology Co., Ltd. Solar cell and photovoltaic module

Also Published As

Publication number Publication date
JP2015516145A (ja) 2015-06-08
WO2014011260A3 (en) 2014-04-10
WO2014011260A2 (en) 2014-01-16

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Legal Events

Date Code Title Description
MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted