AU2003285819A1 - Method for forming a dual gate oxide device using a metal oxide and resulting device - Google Patents

Method for forming a dual gate oxide device using a metal oxide and resulting device

Info

Publication number
AU2003285819A1
AU2003285819A1 AU2003285819A AU2003285819A AU2003285819A1 AU 2003285819 A1 AU2003285819 A1 AU 2003285819A1 AU 2003285819 A AU2003285819 A AU 2003285819A AU 2003285819 A AU2003285819 A AU 2003285819A AU 2003285819 A1 AU2003285819 A1 AU 2003285819A1
Authority
AU
Australia
Prior art keywords
forming
dual gate
metal oxide
gate oxide
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003285819A
Other languages
English (en)
Inventor
David C. Gilmer
Christopher C. Hobbs
Hsing-Huang Tseng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003285819A1 publication Critical patent/AU2003285819A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness
AU2003285819A 2002-08-15 2003-06-16 Method for forming a dual gate oxide device using a metal oxide and resulting device Abandoned AU2003285819A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/219,522 2002-08-15
US10/219,522 US6787421B2 (en) 2002-08-15 2002-08-15 Method for forming a dual gate oxide device using a metal oxide and resulting device
PCT/US2003/018939 WO2004017403A1 (en) 2002-08-15 2003-06-16 Method for forming a dual gate oxide device using a metal oxide and resulting device

Publications (1)

Publication Number Publication Date
AU2003285819A1 true AU2003285819A1 (en) 2004-03-03

Family

ID=31714754

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003285819A Abandoned AU2003285819A1 (en) 2002-08-15 2003-06-16 Method for forming a dual gate oxide device using a metal oxide and resulting device

Country Status (7)

Country Link
US (1) US6787421B2 (https=)
JP (1) JP2005536053A (https=)
KR (1) KR20050054920A (https=)
CN (1) CN1675759A (https=)
AU (1) AU2003285819A1 (https=)
TW (1) TW200414529A (https=)
WO (1) WO2004017403A1 (https=)

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US7214590B2 (en) * 2005-04-05 2007-05-08 Freescale Semiconductor, Inc. Method of forming an electronic device
US8405165B2 (en) * 2005-06-07 2013-03-26 International Business Machines Corporation Field effect transistor having multiple conduction states
US7544596B2 (en) 2005-08-30 2009-06-09 Micron Technology, Inc. Atomic layer deposition of GdScO3 films as gate dielectrics
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US7972974B2 (en) * 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
KR100762239B1 (ko) * 2006-05-03 2007-10-01 주식회사 하이닉스반도체 반도체 소자의 ｐｍｏｓ 트랜지스터, 이를 포함하는 반도체소자와 그의 제조 방법
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US7518145B2 (en) * 2007-01-25 2009-04-14 International Business Machines Corporation Integrated multiple gate dielectric composition and thickness semiconductor chip and method of manufacturing the same
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US7709331B2 (en) * 2007-09-07 2010-05-04 Freescale Semiconductor, Inc. Dual gate oxide device integration
US8460996B2 (en) * 2007-10-31 2013-06-11 Freescale Semiconductor, Inc. Semiconductor devices with different dielectric thicknesses
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US7944004B2 (en) * 2009-03-26 2011-05-17 Kabushiki Kaisha Toshiba Multiple thickness and/or composition high-K gate dielectrics and methods of making thereof
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CN103824771A (zh) * 2012-11-16 2014-05-28 中芯国际集成电路制造(上海)有限公司 栅氧化层的形成方法
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TW201528486A (zh) * 2014-01-15 2015-07-16 晶相光電股份有限公司 影像感測裝置及其製造方法
CN104952734B (zh) * 2015-07-16 2020-01-24 矽力杰半导体技术(杭州)有限公司 半导体结构及其制造方法
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Also Published As

Publication number Publication date
CN1675759A (zh) 2005-09-28
US6787421B2 (en) 2004-09-07
US20040032001A1 (en) 2004-02-19
WO2004017403A1 (en) 2004-02-26
JP2005536053A (ja) 2005-11-24
TW200414529A (en) 2004-08-01
KR20050054920A (ko) 2005-06-10

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Legal Events

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase