AU2003263597A1 - Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device - Google Patents

Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Info

Publication number
AU2003263597A1
AU2003263597A1 AU2003263597A AU2003263597A AU2003263597A1 AU 2003263597 A1 AU2003263597 A1 AU 2003263597A1 AU 2003263597 A AU2003263597 A AU 2003263597A AU 2003263597 A AU2003263597 A AU 2003263597A AU 2003263597 A1 AU2003263597 A1 AU 2003263597A1
Authority
AU
Australia
Prior art keywords
semiconductor device
same
assembly method
filler metal
soldering filler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003263597A
Other languages
English (en)
Inventor
Nobuki Mori
Kei Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Publication of AU2003263597A1 publication Critical patent/AU2003263597A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01052—Tellurium [Te]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
AU2003263597A 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device Abandoned AU2003263597A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-273598 2002-09-19
JP2002273598A JP4147875B2 (ja) 2002-09-19 2002-09-19 ろう材、これを用いた半導体装置の組み立て方法並びに半導体装置
PCT/JP2003/011730 WO2004026527A1 (en) 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Publications (1)

Publication Number Publication Date
AU2003263597A1 true AU2003263597A1 (en) 2004-04-08

Family

ID=32024961

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003263597A Abandoned AU2003263597A1 (en) 2002-09-19 2003-09-12 Soldering filler metal, assembly method for semiconductor device using same, and semiconductor device

Country Status (7)

Country Link
EP (1) EP2099580A1 (ja)
JP (1) JP4147875B2 (ja)
KR (1) KR100595037B1 (ja)
CN (1) CN100404193C (ja)
AU (1) AU2003263597A1 (ja)
TW (1) TWI231238B (ja)
WO (1) WO2004026527A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101239425A (zh) * 2008-03-13 2008-08-13 浙江省冶金研究院有限公司 一种无铅高温电子钎料及制备方法
WO2012077228A1 (ja) * 2010-12-10 2012-06-14 三菱電機株式会社 無鉛はんだ合金、半導体装置、および半導体装置の製造方法
JP5878290B2 (ja) * 2010-12-14 2016-03-08 株式会社日本スペリア社 鉛フリーはんだ合金
JP5635561B2 (ja) * 2012-06-21 2014-12-03 株式会社タムラ製作所 はんだ組成物
JP5938390B2 (ja) * 2012-12-25 2016-06-22 三菱マテリアル株式会社 パワーモジュール
CN106271181A (zh) * 2015-05-13 2017-01-04 广西民族大学 一种Sn-Sb-X系高温抗氧化无铅钎料
CN105750757A (zh) * 2016-03-22 2016-07-13 苏州虎伏新材料科技有限公司 一种用于堆焊以获得锡基巴氏合金耐磨层的焊接材料
JP6355091B1 (ja) * 2017-03-07 2018-07-11 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体
JP6355092B1 (ja) 2017-05-11 2018-07-11 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体
JP6998557B2 (ja) * 2017-09-29 2022-01-18 パナソニックＩｐマネジメント株式会社 はんだ合金およびそれを用いた接合構造体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2059019A (en) * 1936-02-20 1936-10-27 Cleveland Graphite Bronze Co Bearing alloy
GB2181009B (en) * 1985-09-23 1989-11-29 Fluke Mfg Co John Apparatus and method for providing improved resistive ratio stability of a resistive divider network
JPH0825051B2 (ja) * 1992-06-22 1996-03-13 株式会社日本スペリア社 はんだ合金
US5851482A (en) * 1996-03-22 1998-12-22 Korea Institute Of Machinery & Metals Tin-bismuth based lead-free solder for copper and copper alloys
US5837191A (en) * 1996-10-22 1998-11-17 Johnson Manufacturing Company Lead-free solder
US5833921A (en) * 1997-09-26 1998-11-10 Ford Motor Company Lead-free, low-temperature solder compositions
JP2001191196A (ja) * 1999-10-29 2001-07-17 Topy Ind Ltd ぬれ性、熱サイクル特性及び耐酸化性に優れたＳｎ基Ｐｂフリー半田
DE10145389C2 (de) * 2001-09-14 2003-07-24 Forschungsvereinigung Antriebs Gleitlagerlegierung auf Sn-Basis

Also Published As

Publication number Publication date
KR20050057490A (ko) 2005-06-16
CN1681620A (zh) 2005-10-12
TWI231238B (en) 2005-04-21
EP2099580A1 (en) 2009-09-16
WO2004026527A1 (en) 2004-04-01
TW200406278A (en) 2004-05-01
JP4147875B2 (ja) 2008-09-10
CN100404193C (zh) 2008-07-23
JP2004106027A (ja) 2004-04-08
KR100595037B1 (ko) 2006-06-30

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase