AU2003232645A1 - Baffle plate and plasma etching device having same - Google Patents

Baffle plate and plasma etching device having same

Info

Publication number
AU2003232645A1
AU2003232645A1 AU2003232645A AU2003232645A AU2003232645A1 AU 2003232645 A1 AU2003232645 A1 AU 2003232645A1 AU 2003232645 A AU2003232645 A AU 2003232645A AU 2003232645 A AU2003232645 A AU 2003232645A AU 2003232645 A1 AU2003232645 A1 AU 2003232645A1
Authority
AU
Australia
Prior art keywords
same
baffle plate
plasma etching
etching device
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003232645A
Other languages
English (en)
Inventor
Moon Hwan Kim
Jeung Woo Lee
Young Jae Moon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Korea Ltd
Original Assignee
Tokyo Electron Korea Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Korea Ltd filed Critical Tokyo Electron Korea Ltd
Publication of AU2003232645A1 publication Critical patent/AU2003232645A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
AU2003232645A 2002-05-22 2003-05-22 Baffle plate and plasma etching device having same Abandoned AU2003232645A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020020028360A KR20030090305A (ko) 2002-05-22 2002-05-22 플라즈마 발생장치의 가스 배기용 배플 플레이트
KR10-2002-0028360 2002-05-22
PCT/KR2003/001006 WO2003098669A1 (en) 2002-05-22 2003-05-22 Baffle plate and plasma etching device having same

Publications (1)

Publication Number Publication Date
AU2003232645A1 true AU2003232645A1 (en) 2003-12-02

Family

ID=29546332

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003232645A Abandoned AU2003232645A1 (en) 2002-05-22 2003-05-22 Baffle plate and plasma etching device having same

Country Status (6)

Country Link
US (1) US20050224179A1 (ko)
JP (1) JP2005526395A (ko)
KR (2) KR20030090305A (ko)
AU (1) AU2003232645A1 (ko)
TW (1) TW200403961A (ko)
WO (1) WO2003098669A1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI331770B (en) * 2005-11-04 2010-10-11 Applied Materials Inc Apparatus for plasma-enhanced atomic layer deposition
EP1968098A1 (en) * 2007-03-08 2008-09-10 Applied Materials, Inc. Suction device for plasma coating chamber
JP2010174779A (ja) * 2009-01-30 2010-08-12 Hitachi High-Technologies Corp 真空処理装置
JP6165456B2 (ja) * 2013-02-12 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20200173015A1 (en) * 2013-07-25 2020-06-04 Samsung Display Co., Ltd. Vapor deposition apparatus
US9852905B2 (en) * 2014-01-16 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for uniform gas flow in a deposition chamber
JP6438320B2 (ja) * 2014-06-19 2018-12-12 東京エレクトロン株式会社 プラズマ処理装置
JP6423706B2 (ja) * 2014-12-16 2018-11-14 東京エレクトロン株式会社 プラズマ処理装置
JP6523714B2 (ja) 2015-03-05 2019-06-05 東京エレクトロン株式会社 プラズマ処理装置
JP6570993B2 (ja) * 2015-12-16 2019-09-04 東京エレクトロン株式会社 プラズマ処理装置
KR102141273B1 (ko) 2017-05-24 2020-08-04 주식회사 엘지화학 유체의 유동 편차를 개선하기 위한 배플 장치
JP6575641B1 (ja) * 2018-06-28 2019-09-18 株式会社明電舎 シャワーヘッドおよび処理装置
CN111383884B (zh) * 2018-12-27 2023-03-10 中微半导体设备(上海)股份有限公司 等离子体约束系统及方法
US20220139661A1 (en) * 2019-04-01 2022-05-05 One Semicon. Co., Ltd. Manufacturing method of plasma focus ring for semiconductor etching apparatus
US11415147B2 (en) * 2019-05-28 2022-08-16 Applied Materials, Inc. Pumping liner for improved flow uniformity
US20210066051A1 (en) * 2019-08-28 2021-03-04 Applied Materials, Inc. High conductance lower shield for process chamber
US11380524B2 (en) * 2020-03-19 2022-07-05 Applied Materials, Inc. Low resistance confinement liner for use in plasma chamber
KR20220060855A (ko) * 2020-11-05 2022-05-12 삼성전자주식회사 기판 처리 방법 및 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5605637A (en) * 1994-12-15 1997-02-25 Applied Materials Inc. Adjustable dc bias control in a plasma reactor
JP3468446B2 (ja) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 プラズマ処理装置
US5994662A (en) * 1997-05-29 1999-11-30 Applied Materials, Inc. Unique baffle to deflect remote plasma clean gases
US6051100A (en) * 1997-10-24 2000-04-18 International Business Machines Corporation High conductance plasma containment structure
US6093281A (en) * 1998-02-26 2000-07-25 International Business Machines Corp. Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers
JP4217299B2 (ja) * 1998-03-06 2009-01-28 東京エレクトロン株式会社 処理装置
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
KR100265288B1 (ko) * 1998-04-22 2000-10-02 윤종용 반도체소자 제조용 식각장치의 배플
US6021672A (en) * 1998-09-18 2000-02-08 Windbond Electronics Corp. Simultaneous in-situ optical sensing of pressure and etch rate in plasma etch chamber
JP2000188281A (ja) * 1998-12-21 2000-07-04 Toshiba Corp プラズマプロセス装置、バッフル板及びプラズマプロセス
JP2000286242A (ja) * 1999-03-31 2000-10-13 Tokyo Electron Ltd プラズマ処理装置
JP2003224077A (ja) * 2002-01-30 2003-08-08 Tokyo Electron Ltd プラズマ処理装置、電極部材、バッフル板の製造方法、処理装置、および、表面処理方法
JP4330315B2 (ja) * 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system

Also Published As

Publication number Publication date
JP2005526395A (ja) 2005-09-02
US20050224179A1 (en) 2005-10-13
WO2003098669A1 (en) 2003-11-27
KR100627324B1 (ko) 2006-09-25
KR20030090305A (ko) 2003-11-28
KR20050007405A (ko) 2005-01-17
TW200403961A (en) 2004-03-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase