AU2001271308A1 - Polishing composition for metal cmp - Google Patents

Polishing composition for metal cmp

Info

Publication number
AU2001271308A1
AU2001271308A1 AU2001271308A AU7130801A AU2001271308A1 AU 2001271308 A1 AU2001271308 A1 AU 2001271308A1 AU 2001271308 A AU2001271308 A AU 2001271308A AU 7130801 A AU7130801 A AU 7130801A AU 2001271308 A1 AU2001271308 A1 AU 2001271308A1
Authority
AU
Australia
Prior art keywords
polishing composition
metal cmp
compositions
tantalum
features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001271308A
Other languages
English (en)
Inventor
Steven K. Grumbine
Eric W. G. Hoglund
Christopher C. Streinz
Shumin Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of AU2001271308A1 publication Critical patent/AU2001271308A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AU2001271308A 2000-07-05 2001-06-14 Polishing composition for metal cmp Abandoned AU2001271308A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09609882 2000-07-05
US09/609,882 US6592776B1 (en) 1997-07-28 2000-07-05 Polishing composition for metal CMP
PCT/US2001/019057 WO2002002706A1 (en) 2000-07-05 2001-06-14 Polishing composition for metal cmp

Publications (1)

Publication Number Publication Date
AU2001271308A1 true AU2001271308A1 (en) 2002-01-14

Family

ID=24442734

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001271308A Abandoned AU2001271308A1 (en) 2000-07-05 2001-06-14 Polishing composition for metal cmp

Country Status (9)

Country Link
US (2) US6592776B1 (enrdf_load_stackoverflow)
EP (1) EP1299489B1 (enrdf_load_stackoverflow)
JP (1) JP4510374B2 (enrdf_load_stackoverflow)
CN (1) CN1216953C (enrdf_load_stackoverflow)
AT (1) ATE344830T1 (enrdf_load_stackoverflow)
AU (1) AU2001271308A1 (enrdf_load_stackoverflow)
DE (1) DE60124404T2 (enrdf_load_stackoverflow)
TW (1) TWI261063B (enrdf_load_stackoverflow)
WO (1) WO2002002706A1 (enrdf_load_stackoverflow)

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JP2002288821A (ja) * 2001-03-27 2002-10-04 Showa Denko Kk テクスチャリング加工用組成物
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
JP2003313542A (ja) * 2002-04-22 2003-11-06 Jsr Corp 化学機械研磨用水系分散体
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
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WO2006119249A2 (en) * 2005-04-29 2006-11-09 Brown University Aerogels and methods of using the same for chemical mechanical planarization and for extracting metal ions
WO2008004534A1 (fr) * 2006-07-04 2008-01-10 Hitachi Chemical Co., Ltd. Liquide de polissage pour le polissage mécano-chimique
EP2052048B1 (en) 2006-07-12 2018-01-24 Cabot Microelectronics Corporation Cmp method for metal-containing substrates
US20080148652A1 (en) * 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Compositions for chemical mechanical planarization of copper
US20080274618A1 (en) * 2007-05-04 2008-11-06 Ferro Corporation Polishing composition and method for high selectivity polysilicon cmp
WO2009042073A2 (en) * 2007-09-21 2009-04-02 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5619009B2 (ja) * 2008-09-19 2014-11-05 キャボット マイクロエレクトロニクス コーポレイションＣａｂｏｔ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐｏｒａｔｉｏｎ 低ｋ誘電体のためのバリアースラリー
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US8524540B2 (en) * 2011-02-01 2013-09-03 Nilesh Kapadia Adhesion promoting composition for metal leadframes
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN103526207B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种除锈浆料
CN103498161B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种金属抛光防腐浆料
CN103498160B (zh) * 2013-09-23 2016-01-20 无锡阳工机械制造有限公司 一种抛光浆料
CN103484876B (zh) * 2013-09-23 2016-01-13 无锡阳工机械制造有限公司 一种除锈浆料
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
US9385000B2 (en) * 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
CN117625325A (zh) 2015-01-13 2024-03-01 Cmc材料股份有限公司 用于在化学机械抛光后清洁半导体晶片的清洁组合物及方法
CN105369273A (zh) * 2015-10-15 2016-03-02 当涂县维思共创工业产品设计有限公司 一种铝型材表面清洗抛光剂
CN105331992A (zh) * 2015-10-15 2016-02-17 当涂县维思共创工业产品设计有限公司 一种铝表面脱脂除油剂
US10586914B2 (en) 2016-10-14 2020-03-10 Applied Materials, Inc. Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
US10037889B1 (en) * 2017-03-29 2018-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films
KR102619857B1 (ko) * 2020-05-20 2023-12-29 삼성에스디아이 주식회사 텅스텐 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 연마 방법

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Also Published As

Publication number Publication date
JP2004502823A (ja) 2004-01-29
CN1436225A (zh) 2003-08-13
EP1299489A1 (en) 2003-04-09
US6767476B2 (en) 2004-07-27
JP4510374B2 (ja) 2010-07-21
DE60124404T2 (de) 2007-08-23
CN1216953C (zh) 2005-08-31
TWI261063B (en) 2006-09-01
US6592776B1 (en) 2003-07-15
EP1299489B1 (en) 2006-11-08
WO2002002706A1 (en) 2002-01-10
ATE344830T1 (de) 2006-11-15
US20030203635A1 (en) 2003-10-30
DE60124404D1 (de) 2006-12-21

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