AU2000255592A1 - Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches - Google Patents

Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches

Info

Publication number
AU2000255592A1
AU2000255592A1 AU2000255592A AU5559200A AU2000255592A1 AU 2000255592 A1 AU2000255592 A1 AU 2000255592A1 AU 2000255592 A AU2000255592 A AU 2000255592A AU 5559200 A AU5559200 A AU 5559200A AU 2000255592 A1 AU2000255592 A1 AU 2000255592A1
Authority
AU
Australia
Prior art keywords
sub
power semiconductor
semiconductor switch
switch
semiconductor switches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000255592A
Other languages
English (en)
Inventor
Jan Thalheim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Switzerland GmbH
Original Assignee
CT Concept Technologie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CT Concept Technologie AG filed Critical CT Concept Technologie AG
Publication of AU2000255592A1 publication Critical patent/AU2000255592A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching

Landscapes

  • Power Conversion In General (AREA)
  • Supply And Distribution Of Alternating Current (AREA)
  • Remote Monitoring And Control Of Power-Distribution Networks (AREA)
  • Control Of Stepping Motors (AREA)
  • Dc-Dc Converters (AREA)
AU2000255592A 2000-07-13 2000-07-13 Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches Abandoned AU2000255592A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2000/000949 WO2002007315A1 (de) 2000-07-13 2000-07-13 Verfahren und vorrichtung zur zustandsabhängigen regelung des transienten verhaltens von leistungshalbleiterschaltern

Publications (1)

Publication Number Publication Date
AU2000255592A1 true AU2000255592A1 (en) 2002-01-30

Family

ID=11003949

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2000255592A Abandoned AU2000255592A1 (en) 2000-07-13 2000-07-13 Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches

Country Status (8)

Country Link
US (1) US6972611B1 (es)
EP (1) EP1299950B1 (es)
JP (1) JP4823470B2 (es)
AT (1) ATE396539T1 (es)
AU (1) AU2000255592A1 (es)
DE (1) DE50015173D1 (es)
ES (1) ES2302695T3 (es)
WO (1) WO2002007315A1 (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7693611B2 (en) * 2003-12-31 2010-04-06 Silicon Laboratories, Inc. Power supply control using supply power transition control and dynamic controller parameter(s)
JP4127399B2 (ja) * 2004-03-31 2008-07-30 松下電器産業株式会社 スイッチング電源制御用半導体装置
FI116109B (fi) * 2004-05-10 2005-09-15 Abb Oy Puolijohdekomponentin ohjauskytkentä
DE102005036317B4 (de) 2005-07-29 2010-02-11 Aloys Wobben Verfahren und Vorrichtung zum Bestimmen der Verlustleistung eines elektronischen Schalters, Wechselrichter, Windenergieanlage mit Verfahren zur Steuerung
JP4874665B2 (ja) * 2006-02-14 2012-02-15 株式会社東芝 ゲート駆動回路
GB2497970A (en) * 2011-12-23 2013-07-03 Amantys Ltd Power semiconductor switching device controller
US9048831B2 (en) * 2012-07-13 2015-06-02 General Electric Company Systems and methods for regulating semiconductor devices
US9455697B2 (en) * 2012-09-28 2016-09-27 Infineon Technologies Austria Ag Switch circuit with a first transistor device and a second transistor device connected in series
EP2768140A1 (en) * 2013-02-13 2014-08-20 Alstom Technology Ltd Method of switching a semiconductor device
DE102013015723B3 (de) * 2013-09-20 2014-09-04 Hochschule Reutlingen Verbesserte Ansteuerung von Leistungshalbleitern
US10071652B2 (en) * 2016-05-11 2018-09-11 Ford Global Technologies, Llc Dual mode IGBT gate drive to reduce switching loss
US10181847B2 (en) 2017-02-01 2019-01-15 Texas Instruments Incorporated Ring amplitude measurement and mitigation
US10594315B2 (en) * 2017-02-01 2020-03-17 Texas Instruments Incorporated Switching rate monitoring and control
CN106991221B (zh) * 2017-03-24 2020-04-24 清华大学 一种基于igbt器件瞬态物理过程的分段折线建模方法
US10461732B1 (en) * 2018-06-18 2019-10-29 Infineon Technologies Austria Ag System and method of driving a power switch in combination with regulated DI/DT and/or DV/DT
EP3696977A1 (de) * 2019-02-14 2020-08-19 Siemens Aktiengesellschaft Elektronischer schalter als strombegrenzer und dämpfungselement
US11165422B2 (en) 2020-04-01 2021-11-02 Delta Electronics, Inc. Gate driver circuit with reduced power semiconductor conduction loss

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2627033B1 (fr) 1988-02-04 1990-07-20 Sgs Thomson Microelectronics Circuit de commande de grille d'un transistor mos de puissance fonctionnant en commutation
JP3141613B2 (ja) * 1993-03-31 2001-03-05 株式会社日立製作所 電圧駆動形素子の駆動方法及びその回路
JP2793946B2 (ja) * 1993-08-26 1998-09-03 三菱電機株式会社 電力用スイッチング装置
DE4335857A1 (de) * 1993-10-21 1995-04-27 Abb Management Ag Stromrichterschaltungsanordnung und Verfahren zur Ansteuerung derselben
JP3373704B2 (ja) * 1995-08-25 2003-02-04 三菱電機株式会社 絶縁ゲートトランジスタ駆動回路
AU707636C (en) 1995-11-23 2003-01-16 Cancer Research Campaign Technology Limited Materials and methods relating to the identification and sequencing of the BRCA2 cancer susceptibility gene and uses thereof
DE19610895A1 (de) * 1996-03-20 1997-09-25 Abb Research Ltd Verfahren zur Einschaltregelung eines IGBTs und Vorrichtung zur Durchführung des Verfahrens
AU2889097A (en) 1996-05-10 1997-12-05 Novartis Ag Identification of members of combinatorial libraries by mass spectrometry
US6127746A (en) * 1996-10-21 2000-10-03 International Rectifier Corp. Method of controlling the switching DI/DT and DV/DT of a MOS-gated power transistor
JP3560432B2 (ja) * 1996-12-18 2004-09-02 株式会社日立製作所 Ｍｏｓトランジスタの駆動装置
DE19744848A1 (de) * 1997-10-10 1999-04-15 Semikron Elektronik Gmbh Schaltungsanordnung der Leistungsklasse für hohe Spannungsbelastungen
ATE262178T1 (de) 1997-11-27 2004-04-15 Max Planck Gesellschaft Identifizierung und charakterisierung von interagierenden molekülen
JPH11234103A (ja) * 1998-01-22 1999-08-27 Abb Res Ltd パワートランジスタにおけるスイッチング動作の制御方法および装置
JP3447949B2 (ja) * 1998-03-31 2003-09-16 株式会社東芝 絶縁ゲート型半導体素子のゲート駆動回路、電力変換装置
JP3650264B2 (ja) * 1998-05-11 2005-05-18 三菱電機株式会社 半導体素子の駆動回路
JP2000040951A (ja) * 1998-05-18 2000-02-08 Toshiba Corp 半導体素子、その駆動方法及び駆動装置
JP2000083371A (ja) * 1998-09-02 2000-03-21 Fuji Electric Co Ltd 電力変換器におけるゲート駆動回路
JP2003527072A (ja) 1998-10-16 2003-09-16 ゼンコー 蛋白質ライブラリーに関する蛋白質設計オートメーション
KR100433799B1 (ko) * 1998-12-03 2004-06-04 가부시키가이샤 히타치세이사쿠쇼 전압구동형 스위칭 소자의 게이트 구동회로
DE19902520B4 (de) * 1999-01-22 2005-10-06 Siemens Ag Hybrid-Leistungs-MOSFET
AU6539600A (en) 1999-08-10 2001-03-05 Genvec, Inc. Method of evaluating a gene transfer vector and gene transfer vector product interactions

Also Published As

Publication number Publication date
JP2004504799A (ja) 2004-02-12
ES2302695T3 (es) 2008-08-01
ATE396539T1 (de) 2008-06-15
EP1299950A1 (de) 2003-04-09
WO2002007315A1 (de) 2002-01-24
EP1299950B1 (de) 2008-05-21
JP4823470B2 (ja) 2011-11-24
US6972611B1 (en) 2005-12-06
DE50015173D1 (de) 2008-07-03

Similar Documents

Publication Publication Date Title
AU2000255592A1 (en) Method and device for a condition-dependent control of the transient behavior ofpower semiconductor switches
US5943223A (en) Electric switches for reducing on-state power loss
EP3185421B1 (en) Solid state power control
Wheeler et al. Enhancement of matrix converter output waveform quality using minimized commutation times
Heumann Basic principles of power electronics
KR102450784B1 (ko) 이중-베이스 양극성 접합 트랜지스터의 최적화된 동작을 갖는 회로, 방법 및 시스템
US5793586A (en) Hybrid high direct current circuit interrupter
US6614281B1 (en) Method and device for disconnecting a cascode circuit with voltage-controlled semiconductor switches
CN109983680B (zh) 固态开关系统
Peng et al. Development of medium voltage solid-state fault isolation devices for ultra-fast protection of distribution systems
US10985546B2 (en) Low-loss and fast acting solid-state breaker
Baliga Power ICs in the saddle
US20030184926A1 (en) Hybrid switch module for an AC power capacitor
Wang et al. High performance solid-state switches using series-connected SiC-MOSFETs for high voltage applications
Ting et al. Digital control of IGBTs for module shutdown in input-series and output-parallel connected modular DC-DC converter
Prasai et al. Zero-energy sag corrector with reduced device count
SE1250798A1 (sv) Förbättrat strömställarskydd
Prigmore et al. An IGCT-based electronic circuit breaker design for a 12.47 kV distribution system
Yang et al. Predictive optimisation of high-power IGBT switching under active voltage control
SU1742955A1 (ru) Преобразователь напр жени
RU2054222C1 (ru) Многофазный преобразователь переменного напряжения в постоянное
Spahn et al. A high current rate semiconducting device for pulse power application
SU1264263A1 (ru) Способ компенсации токов однофазного замыкани в трехфазной сети с дугогас щим реактором в нейтрали
Heumann EVALUATION OF TURN-OFF SEMICONDUCTOR DEVICES AND FUTRUE TRENDS
RU42367U1 (ru) Устройство для переключения ответвлений обмотки трансформатора