ATE87398T1 - Halbleiteranordnung mit einer ladungsuebertragungsanordnung. - Google Patents

Halbleiteranordnung mit einer ladungsuebertragungsanordnung.

Info

Publication number
ATE87398T1
ATE87398T1 AT88201264T AT88201264T ATE87398T1 AT E87398 T1 ATE87398 T1 AT E87398T1 AT 88201264 T AT88201264 T AT 88201264T AT 88201264 T AT88201264 T AT 88201264T AT E87398 T1 ATE87398 T1 AT E87398T1
Authority
AT
Austria
Prior art keywords
capacitor
read
out zone
charge transfer
amplifier
Prior art date
Application number
AT88201264T
Other languages
English (en)
Inventor
Marcellinus Johannes M Pelgrom
Antonius Johannes Ger Jochijms
Roermund Arthur Hermanus M Van
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE87398T1 publication Critical patent/ATE87398T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/452—Input structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Vending Machines For Individual Products (AREA)
AT88201264T 1987-06-30 1988-06-17 Halbleiteranordnung mit einer ladungsuebertragungsanordnung. ATE87398T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8701528A NL8701528A (nl) 1987-06-30 1987-06-30 Halfgeleiderinrichting voozien van een ladingsoverdrachtinrichting.
EP88201264A EP0297655B1 (de) 1987-06-30 1988-06-17 Halbleiteranordnung mit einer Ladungsübertragungsanordnung

Publications (1)

Publication Number Publication Date
ATE87398T1 true ATE87398T1 (de) 1993-04-15

Family

ID=19850224

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88201264T ATE87398T1 (de) 1987-06-30 1988-06-17 Halbleiteranordnung mit einer ladungsuebertragungsanordnung.

Country Status (8)

Country Link
US (1) US4987580A (de)
EP (1) EP0297655B1 (de)
JP (1) JPH0724308B2 (de)
KR (1) KR890001194A (de)
CN (1) CN1031619A (de)
AT (1) ATE87398T1 (de)
DE (1) DE3879557T2 (de)
NL (1) NL8701528A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423334A (ja) * 1990-05-14 1992-01-27 Nec Corp 電荷転送装置
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
CN1085907C (zh) * 1998-11-20 2002-05-29 中国科学院空间科学与应用研究中心 一种电荷灵敏放大器电路
KR101554369B1 (ko) * 2007-01-19 2015-09-18 인터실 아메리카스 엘엘씨 전하영역 파이프라인의 아날로그 디지털 변환기
US7535400B2 (en) * 2007-01-23 2009-05-19 Kenet, Incorporated Analog error correction for a pipelined charge-domain A/D converter
JP5814818B2 (ja) * 2012-02-21 2015-11-17 株式会社日立製作所 固体撮像装置
EP2882098B1 (de) 2012-08-02 2018-12-05 Horiba, Ltd. Verstärker und strahlungsdetektor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4156818A (en) * 1975-12-23 1979-05-29 International Business Machines Corporation Operating circuitry for semiconductor charge coupled devices
DE2602520B2 (de) * 1976-01-23 1978-02-02 Linearer ausgangsverstaerker fuer ladungsgekoppelte elemente
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
DE2838037A1 (de) * 1978-08-31 1980-04-10 Siemens Ag Monolithisch integrierte ladungsverschiebeanordnung
DE3032332A1 (de) * 1980-08-27 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Ausgangsstufe einer monolithisch integrierten ladu ngsverschiebeanordnung
JPS5919297A (ja) * 1982-07-23 1984-01-31 Toshiba Corp 電荷結合装置の出力回路
NL8403113A (nl) * 1984-10-12 1986-05-01 Philips Nv Ladingsgekoppelde inrichting.
JP2724702B2 (ja) * 1985-06-21 1998-03-09 日本テキサス・インスツルメンツ 株式会社 電荷結合型半導体装置の製造方法
JPS62230052A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電荷転送装置

Also Published As

Publication number Publication date
NL8701528A (nl) 1989-01-16
DE3879557D1 (de) 1993-04-29
CN1031619A (zh) 1989-03-08
JPS6422064A (en) 1989-01-25
EP0297655A1 (de) 1989-01-04
KR890001194A (ko) 1989-03-18
EP0297655B1 (de) 1993-03-24
JPH0724308B2 (ja) 1995-03-15
US4987580A (en) 1991-01-22
DE3879557T2 (de) 1993-09-30

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