ATE555229T1 - Sio-abscheidungsmaterial - Google Patents
Sio-abscheidungsmaterialInfo
- Publication number
- ATE555229T1 ATE555229T1 AT05770381T AT05770381T ATE555229T1 AT E555229 T1 ATE555229 T1 AT E555229T1 AT 05770381 T AT05770381 T AT 05770381T AT 05770381 T AT05770381 T AT 05770381T AT E555229 T1 ATE555229 T1 AT E555229T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon monoxide
- vapor deposition
- deposition material
- ppm
- hydrogen gas
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
- Wrappers (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004253771 | 2004-09-01 | ||
PCT/JP2005/014554 WO2006025195A1 (ja) | 2004-09-01 | 2005-08-09 | SiO蒸着材、原料用Si粉末およびSiO蒸着材の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE555229T1 true ATE555229T1 (de) | 2012-05-15 |
Family
ID=35999855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05770381T ATE555229T1 (de) | 2004-09-01 | 2005-08-09 | Sio-abscheidungsmaterial |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080025897A1 (de) |
EP (1) | EP1795624B1 (de) |
JP (1) | JP5074764B2 (de) |
CN (1) | CN101010444A (de) |
AT (1) | ATE555229T1 (de) |
WO (1) | WO2006025195A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7947377B2 (en) * | 2007-06-20 | 2011-05-24 | Dai Nippon Printing Co., Ltd. | Powder mixture to be made into evaporation source material for use in ion plating, evaporation source material for use in ion plating and method of producing the same, and gas barrier sheet and method of producing the same |
WO2010003455A1 (en) * | 2008-07-09 | 2010-01-14 | Degussa Novara Technology S.P.A. | Silicon-based green bodies |
JP4749502B2 (ja) | 2009-10-09 | 2011-08-17 | 株式会社大阪チタニウムテクノロジーズ | SiOxならびにこれを用いたバリアフィルム用蒸着材およびリチウムイオン二次電池用負極活物質 |
JP6335071B2 (ja) * | 2014-08-29 | 2018-05-30 | キヤノンオプトロン株式会社 | 蒸着材料、蒸着材料の製造方法、光学素子の製造方法およびガスバリアフィルムの製造方法 |
TWI658002B (zh) * | 2018-08-15 | 2019-05-01 | 國立臺灣大學 | 製造一氧化矽沉積物之方法及執行該方法之製造設備 |
JP7175456B2 (ja) * | 2019-12-06 | 2022-11-21 | 松田産業株式会社 | 蒸着材料及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD233748A3 (de) * | 1983-12-30 | 1986-03-12 | Torgau Flachglas | Aufdampfmaterial zur erzielung extrem hoher aufdampfraten |
US5037503A (en) * | 1988-05-31 | 1991-08-06 | Osaka Titanium Co., Ltd. | Method for growing silicon single crystal |
US6001209A (en) * | 1993-05-17 | 1999-12-14 | Popat; Ghanshyam H. | Divisible laser note sheet |
US7374631B1 (en) * | 1998-09-22 | 2008-05-20 | Avery Dennison Corporation | Methods of forming printable media using a laminate sheet construction |
WO2001087772A1 (en) * | 2000-05-16 | 2001-11-22 | Tohoku Electric Power Company Incorporated | Method and apparatus for production of high purity silicon |
EP1318207A4 (de) * | 2000-08-31 | 2006-08-16 | Sumitomo Titanium Corp | Siliziummonoxid-gasphasenabscheidungsmaterial, herstellungsverfahren dafür, rohmaterial zu dessen herstellung und vorrichtung zur herstellung |
JP3488419B2 (ja) * | 2000-08-31 | 2004-01-19 | 住友チタニウム株式会社 | 一酸化けい素蒸着材料の製造方法 |
JP2004076120A (ja) * | 2002-08-21 | 2004-03-11 | Shin Etsu Chem Co Ltd | フィルム蒸着用酸化珪素及びその製造方法 |
US20060198979A1 (en) * | 2005-03-07 | 2006-09-07 | Mcconkie James W | Adhesive printing material assemblies and methods of use |
-
2005
- 2005-08-09 AT AT05770381T patent/ATE555229T1/de active
- 2005-08-09 US US11/661,393 patent/US20080025897A1/en not_active Abandoned
- 2005-08-09 WO PCT/JP2005/014554 patent/WO2006025195A1/ja active Application Filing
- 2005-08-09 JP JP2006531641A patent/JP5074764B2/ja not_active Expired - Fee Related
- 2005-08-09 CN CNA2005800294606A patent/CN101010444A/zh active Pending
- 2005-08-09 EP EP05770381A patent/EP1795624B1/de not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
US20080025897A1 (en) | 2008-01-31 |
CN101010444A (zh) | 2007-08-01 |
JP5074764B2 (ja) | 2012-11-14 |
EP1795624A1 (de) | 2007-06-13 |
JPWO2006025195A1 (ja) | 2008-05-08 |
EP1795624B1 (de) | 2012-04-25 |
EP1795624A4 (de) | 2009-07-22 |
WO2006025195A1 (ja) | 2006-03-09 |
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