ATE544725T1 - Verfahren zum herstellen eines mikrosensors - Google Patents

Verfahren zum herstellen eines mikrosensors

Info

Publication number
ATE544725T1
ATE544725T1 AT06075521T AT06075521T ATE544725T1 AT E544725 T1 ATE544725 T1 AT E544725T1 AT 06075521 T AT06075521 T AT 06075521T AT 06075521 T AT06075521 T AT 06075521T AT E544725 T1 ATE544725 T1 AT E544725T1
Authority
AT
Austria
Prior art keywords
capacitive plates
accelerometer
inertial mass
fixed
movable
Prior art date
Application number
AT06075521T
Other languages
English (en)
Inventor
John C Christenson
Seyed R Zarabadi
Dan W Chilcott
Original Assignee
Delphi Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delphi Tech Inc filed Critical Delphi Tech Inc
Application granted granted Critical
Publication of ATE544725T1 publication Critical patent/ATE544725T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00047—Cavities
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/082—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for two degrees of freedom of movement of a single mass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
AT06075521T 2005-03-16 2006-03-06 Verfahren zum herstellen eines mikrosensors ATE544725T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/081,422 US7250322B2 (en) 2005-03-16 2005-03-16 Method of making microsensor

Publications (1)

Publication Number Publication Date
ATE544725T1 true ATE544725T1 (de) 2012-02-15

Family

ID=36607522

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06075521T ATE544725T1 (de) 2005-03-16 2006-03-06 Verfahren zum herstellen eines mikrosensors

Country Status (3)

Country Link
US (1) US7250322B2 (de)
EP (1) EP1702884B1 (de)
AT (1) ATE544725T1 (de)

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US8462109B2 (en) 2007-01-05 2013-06-11 Invensense, Inc. Controlling and accessing content using motion processing on mobile devices
US8952832B2 (en) 2008-01-18 2015-02-10 Invensense, Inc. Interfacing application programs and motion sensors of a device
JP4792143B2 (ja) * 2007-02-22 2011-10-12 株式会社デンソー 半導体装置およびその製造方法
US7510894B2 (en) * 2007-04-03 2009-03-31 Delphi Technologies, Inc. Post-logic isolation of silicon regions for an integrated sensor
US8877648B2 (en) * 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
CN101871952B (zh) * 2010-06-11 2012-07-11 瑞声声学科技(深圳)有限公司 Mems加速度传感器
CN101865934B (zh) * 2010-06-11 2012-01-18 瑞声声学科技(深圳)有限公司 加速度传感器
US10267822B2 (en) 2013-01-31 2019-04-23 Hewlett-Packard Development Company, L.P. Sensor having particle barrier
US10800649B2 (en) 2016-11-28 2020-10-13 Analog Devices International Unlimited Company Planar processing of suspended microelectromechanical systems (MEMS) devices
DE102017211080B3 (de) * 2017-06-29 2018-11-08 Infineon Technologies Dresden GmbH & Co. KG Mikromechanischer Sensor und Verfahren zum Herstellen eines mikromechanischen Sensors und eines mikromechanischen Sensorelements
US10843920B2 (en) * 2019-03-08 2020-11-24 Analog Devices International Unlimited Company Suspended microelectromechanical system (MEMS) devices

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Also Published As

Publication number Publication date
EP1702884A3 (de) 2011-01-05
EP1702884A2 (de) 2006-09-20
EP1702884B1 (de) 2012-02-08
US20060211161A1 (en) 2006-09-21
US7250322B2 (en) 2007-07-31

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