ATE534237T1 - Aktives cmos-pixel mit sehr hoher funktionsdynamik - Google Patents

Aktives cmos-pixel mit sehr hoher funktionsdynamik

Info

Publication number
ATE534237T1
ATE534237T1 AT08803287T AT08803287T ATE534237T1 AT E534237 T1 ATE534237 T1 AT E534237T1 AT 08803287 T AT08803287 T AT 08803287T AT 08803287 T AT08803287 T AT 08803287T AT E534237 T1 ATE534237 T1 AT E534237T1
Authority
AT
Austria
Prior art keywords
high functional
cmos pixel
active cmos
functional dynamics
dynamics
Prior art date
Application number
AT08803287T
Other languages
English (en)
Inventor
Yang Ni
Original Assignee
New Imaging Technologies Sas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Imaging Technologies Sas filed Critical New Imaging Technologies Sas
Application granted granted Critical
Publication of ATE534237T1 publication Critical patent/ATE534237T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/082—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light with FET's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT08803287T 2007-08-28 2008-08-27 Aktives cmos-pixel mit sehr hoher funktionsdynamik ATE534237T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0757225A FR2920590B1 (fr) 2007-08-28 2007-08-28 Pixel actif cmos a tres grande dynamique de fonctionnement
PCT/EP2008/061261 WO2009027449A1 (fr) 2007-08-28 2008-08-27 Pixel actif cmos a tres grande dynamique de fonctionnement

Publications (1)

Publication Number Publication Date
ATE534237T1 true ATE534237T1 (de) 2011-12-15

Family

ID=39060324

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08803287T ATE534237T1 (de) 2007-08-28 2008-08-27 Aktives cmos-pixel mit sehr hoher funktionsdynamik

Country Status (6)

Country Link
US (2) US20110025898A1 (de)
EP (1) EP2186318B1 (de)
CN (1) CN101796810B (de)
AT (1) ATE534237T1 (de)
FR (1) FR2920590B1 (de)
WO (1) WO2009027449A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2943178B1 (fr) 2009-03-13 2011-08-26 New Imaging Technologies Sas Capteur matriciel a faible consommation
JP6151530B2 (ja) * 2012-02-29 2017-06-21 株式会社半導体エネルギー研究所 イメージセンサ、カメラ、及び監視システム
FR2997596B1 (fr) 2012-10-26 2015-12-04 New Imaging Technologies Sas Structure d'un pixel actif de type cmos
US9374545B2 (en) * 2013-09-13 2016-06-21 BAE Systems Imaging Solutions Inc. Amplifier adapted for CMOS imaging sensors
US9373655B2 (en) 2014-01-21 2016-06-21 Sony Corporation Imaging device and electronic apparatus
JP6171997B2 (ja) 2014-03-14 2017-08-02 ソニー株式会社 固体撮像素子およびその駆動方法、並びに電子機器
EP2924979B1 (de) * 2014-03-25 2023-01-18 IMEC vzw Verbesserungen bei oder im Zusammenhang mit Bildgebungssensoren
FR3022397B1 (fr) 2014-06-13 2018-03-23 New Imaging Technologies Cellule photoelectrique de type c-mos a transfert de charge, et capteur matriciel comprenant un ensemble de telles cellules
FR3027730B1 (fr) * 2014-10-22 2017-12-22 New Imaging Tech Dispositif d'acquisition d'empreintes digitales
JP6743011B2 (ja) * 2014-12-11 2020-08-19 ソニーセミコンダクタソリューションズ株式会社 撮像装置、駆動方法、電子機器
FR3037205B1 (fr) 2015-06-04 2018-07-06 New Imaging Technologies Capteur optique
FR3050596B1 (fr) * 2016-04-26 2018-04-20 New Imaging Technologies Systeme imageur a deux capteurs
CN114567740A (zh) * 2017-04-05 2022-05-31 株式会社尼康 摄像元件及摄像装置
TWI636668B (zh) * 2017-04-28 2018-09-21 友達光電股份有限公司 自動電壓放大裝置及自動電壓放大方法
WO2019000856A1 (en) * 2017-06-30 2019-01-03 Boe Technology Group Co., Ltd. PHOTODETECTION PIXEL CIRCUIT, SENSOR PANEL, AND PHOTOELECTRIC DETECTION APPARATUS
US11290671B2 (en) * 2020-09-01 2022-03-29 Pixart Imaging Inc. Pixel circuit outputting pulse width signals and performing analog operation
US11812176B2 (en) 2020-09-01 2023-11-07 Pixart Imaging Inc. Pixel circuit selecting to output time difference data or image data
US11706542B2 (en) 2020-09-01 2023-07-18 Pixart Imaging Inc. Pixel circuit outputting time difference data and image data, and operating method of pixel array

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPH01106677A (ja) * 1987-10-20 1989-04-24 Sony Corp 電荷転送素子の出力回路
US5939742A (en) * 1997-02-10 1999-08-17 Lucent Technologies Inc. Field-effect photo-transistor
JP3853905B2 (ja) * 1997-03-18 2006-12-06 株式会社東芝 量子効果装置とｂｌトンネル素子を用いた装置
KR100259038B1 (ko) * 1997-03-31 2000-06-15 윤종용 반도체커패시터제조방법및그에따라형성된반도체커패시터
US6201270B1 (en) * 1997-04-07 2001-03-13 Pao-Jung Chen High speed CMOS photodetectors with wide range operating region and fixed pattern noise reduction
US6242728B1 (en) * 1998-08-20 2001-06-05 Foveon, Inc. CMOS active pixel sensor using native transistors
JP3621844B2 (ja) * 1999-02-24 2005-02-16 シャープ株式会社 増幅型固体撮像装置
US6864916B1 (en) * 1999-06-04 2005-03-08 The Trustees Of Columbia University In The City Of New York Apparatus and method for high dynamic range imaging using spatially varying exposures
US7030921B2 (en) * 2000-02-01 2006-04-18 Minolta Co., Ltd. Solid-state image-sensing device
FR2819941B1 (fr) 2001-01-25 2003-06-20 Get Int Element photoelectrique a tres grande dynamique de fonctionnement
JP2002330346A (ja) * 2001-05-02 2002-11-15 Fujitsu Ltd Ｃｍｏｓセンサ回路
US6509765B1 (en) * 2001-11-20 2003-01-21 Sun Microsystems, Inc. Selectable resistor and/or driver for an integrated circuit with a linear resistance
JP4132850B2 (ja) * 2002-02-06 2008-08-13 富士通株式会社 Ｃｍｏｓイメージセンサおよびその制御方法
US6888573B2 (en) * 2002-10-31 2005-05-03 Motorola, Inc. Digital pixel sensor with anti-blooming control
US7502001B2 (en) * 2003-03-12 2009-03-10 Koninklijke Philips Electronics N.V. Light emissive active matrix display devices with optical feedback effective on the timing, to counteract ageing
JP2005210335A (ja) * 2004-01-22 2005-08-04 Nec Electronics Corp 相関二重サンプリング回路、信号処理回路及び固体撮像装置
KR100690880B1 (ko) * 2004-12-16 2007-03-09 삼성전자주식회사 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
CA2528674A1 (en) * 2005-12-02 2007-06-02 Abdulhakim Ahmed On-chip tunable artificial tank circuit
KR100877691B1 (ko) * 2005-12-08 2009-01-09 한국전자통신연구원 이미지 센서 및 이미지 센서의 트랜스퍼 트랜지스터 구동방법
FR2897690B1 (fr) * 2006-02-17 2008-04-18 Commissariat Energie Atomique Dispositif de test de connexions electriques, sans contact
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays
KR100879733B1 (ko) * 2007-06-26 2009-01-20 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성 방법
JP4957405B2 (ja) * 2007-06-27 2012-06-20 富士通セミコンダクター株式会社 信号波形等化回路及び受信回路

Also Published As

Publication number Publication date
CN101796810A (zh) 2010-08-04
WO2009027449A1 (fr) 2009-03-05
CN101796810B (zh) 2013-12-25
EP2186318B1 (de) 2011-11-16
FR2920590B1 (fr) 2009-11-20
US20110025898A1 (en) 2011-02-03
FR2920590A1 (fr) 2009-03-06
EP2186318A1 (de) 2010-05-19
US20150207470A1 (en) 2015-07-23
US9768742B2 (en) 2017-09-19

Similar Documents

Publication Publication Date Title
ATE534237T1 (de) Aktives cmos-pixel mit sehr hoher funktionsdynamik
ES2528346T3 (es) Derivado de péptido insulinotrópico en el que se ha modificado su aminoácido N-terminal
CY2016012I2 (el) Ετεροκυκλικη ενωση χρησιμη ως διαμορφωτης μεταφορεων κασετας συνδεσης με ατρ
MX2014002578A (es) Biosensor optico con una pluralidad de regiones sensoras.
TW200639378A (en) A sensor
NL1033095A1 (nl) Littrow-interferometer.
TW200732866A (en) Binary sinusoidal sub-wavelength gratings as alignment marks
MA38560B1 (fr) Procédé de fourniture d'une caractéristique de sécurité à un document de sécurité, et document de sécurité
BRPI0907388A2 (pt) Rastreamento de publicidade online usando serviços de pagamento.
SMAP200800041A (it) Derivati di pirimidinil-aril-urea attivi come-fgf-inibitori
TW200733369A (en) Image sensor, test system and test method for the same
BRPI0907480A2 (pt) emulsões de óleo em água estabilizadas incluindo ingredientes agricolamente ativos
CY1112576T1 (el) Κρυσταλλικα συμπλοκα γεωργικως δραστικων οργανικων ενωσεων
WO2009135482A3 (de) Lagermodul
BR112015028772A2 (pt) Sistema de processamento de imagens
BRPI0810203A2 (pt) Compostos peptídeos cíclicos.
BRPI0520345A2 (pt) sensor para um sistema de proteção de hardware para módulos de dados eletrÈnicos sensìveis que protege contra manipulações externas
FR2920050B1 (fr) Multimetre numerique possedant une structure de panneau de boitier.
WO2009049273A3 (en) Organic photosensitive optoelectronic devices containing tetra-azaporphyrins
DE112008001628A5 (de) Lagestabilisiertes Trägersystem mit Bildwanderungsausgleich
NL1033024A1 (nl) Interferometer met geringe afwijking ('walk-off').
GB2445514B (en) Regioregular polyselenophenes
CL2008000091A1 (es) Compuestos derivados de piridina, inhibidores del receptor p2y12; composicion farmaceutica que comprende a dichos compuestos; y su uso en el tratamiento del trastorno de agregacion plaquetaria.
EA201301084A1 (ru) Солнцезащитная композиция
FR2921756B1 (fr) Matrice de pixels dotes de regulateurs de tension.