ATE532044T1 - Drucksensoren und verfahren zu ihrer herstellung - Google Patents

Drucksensoren und verfahren zu ihrer herstellung

Info

Publication number
ATE532044T1
ATE532044T1 AT06802137T AT06802137T ATE532044T1 AT E532044 T1 ATE532044 T1 AT E532044T1 AT 06802137 T AT06802137 T AT 06802137T AT 06802137 T AT06802137 T AT 06802137T AT E532044 T1 ATE532044 T1 AT E532044T1
Authority
AT
Austria
Prior art keywords
base substrate
cavity
substrate
production
pressure sensors
Prior art date
Application number
AT06802137T
Other languages
German (de)
English (en)
Inventor
Stanley Chu
Sisira Kankanam Gamage
Hyon-Jin Kwon
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE532044T1 publication Critical patent/ATE532044T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/909—Macrocell arrays, e.g. gate arrays with variable size or configuration of cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
AT06802137T 2005-08-24 2006-08-22 Drucksensoren und verfahren zu ihrer herstellung ATE532044T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/210,309 US7622782B2 (en) 2005-08-24 2005-08-24 Pressure sensors and methods of making the same
PCT/US2006/032858 WO2007024911A2 (en) 2005-08-24 2006-08-22 Pressure sensors and methods of making the same

Publications (1)

Publication Number Publication Date
ATE532044T1 true ATE532044T1 (de) 2011-11-15

Family

ID=37487427

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06802137T ATE532044T1 (de) 2005-08-24 2006-08-22 Drucksensoren und verfahren zu ihrer herstellung

Country Status (7)

Country Link
US (1) US7622782B2 (https=)
EP (1) EP1920229B1 (https=)
JP (1) JP5342236B2 (https=)
KR (1) KR101296031B1 (https=)
CN (1) CN101248340B (https=)
AT (1) ATE532044T1 (https=)
WO (1) WO2007024911A2 (https=)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7304412B2 (en) * 2005-01-31 2007-12-04 Avago Technologes Wireless Ip (Singapore) Pte Ltd Apparatus embodying doped substrate portion
TWI289879B (en) * 2005-09-30 2007-11-11 Touch Micro System Tech Method of fabricating pressure sensor
US7880113B2 (en) * 2005-12-01 2011-02-01 Delphi Technologies, Inc. Plasma discharge method and structure for verifying a hermetical seal
FR2897937B1 (fr) * 2006-02-24 2008-05-23 Commissariat Energie Atomique Capteur de pression a jauges resistives
DE102007027274A1 (de) * 2007-06-11 2008-12-18 Endress + Hauser Gmbh + Co. Kg Differenzdrucksensor
US7784330B2 (en) * 2007-10-05 2010-08-31 Schlumberger Technology Corporation Viscosity measurement
TWI364804B (en) * 2007-11-14 2012-05-21 Ind Tech Res Inst Wafer level sensor package structure and method therefor
JP5001129B2 (ja) * 2007-12-17 2012-08-15 ホーチキ株式会社 熱センサ
US8297125B2 (en) * 2008-05-23 2012-10-30 Honeywell International Inc. Media isolated differential pressure sensor with cap
US8230745B2 (en) 2008-11-19 2012-07-31 Honeywell International Inc. Wet/wet differential pressure sensor based on microelectronic packaging process
DE102008054415A1 (de) * 2008-12-09 2010-06-10 Robert Bosch Gmbh Anordnung zweier Substrate mit einer SLID-Bondverbindung und Verfahren zur Herstellung einer solchen Anordnung
US7900521B2 (en) * 2009-02-10 2011-03-08 Freescale Semiconductor, Inc. Exposed pad backside pressure sensor package
US8471346B2 (en) * 2009-02-27 2013-06-25 Infineon Technologies Ag Semiconductor device including a cavity
US8237235B2 (en) * 2009-04-14 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-ceramic multilayer structure
US8322225B2 (en) * 2009-07-10 2012-12-04 Honeywell International Inc. Sensor package assembly having an unconstrained sense die
TWI388038B (zh) * 2009-07-23 2013-03-01 財團法人工業技術研究院 感測元件結構與製造方法
US8710599B2 (en) 2009-08-04 2014-04-29 Fairchild Semiconductor Corporation Micromachined devices and fabricating the same
US8258745B2 (en) 2009-09-10 2012-09-04 Syntheon, Llc Surgical sterilizer with integrated battery charging device
US8082797B2 (en) 2009-11-11 2011-12-27 Honeywell International Inc. Pressure sensor assembly
US8421168B2 (en) * 2009-11-17 2013-04-16 Fairchild Semiconductor Corporation Microelectromechanical systems microphone packaging systems
JP5771900B2 (ja) * 2010-03-26 2015-09-02 セイコーエプソン株式会社 熱型光検出器、熱型光検出装置及び電子機器
US8435821B2 (en) * 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
US8230743B2 (en) 2010-08-23 2012-07-31 Honeywell International Inc. Pressure sensor
US9278845B2 (en) 2010-09-18 2016-03-08 Fairchild Semiconductor Corporation MEMS multi-axis gyroscope Z-axis electrode structure
EP2616822B1 (en) 2010-09-18 2015-07-01 Fairchild Semiconductor Corporation Micromachined 3-axis accelerometer with a single proof-mass
KR101443730B1 (ko) 2010-09-18 2014-09-23 페어차일드 세미컨덕터 코포레이션 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법
EP2616389B1 (en) 2010-09-18 2017-04-05 Fairchild Semiconductor Corporation Multi-die mems package
KR20130057485A (ko) 2010-09-18 2013-05-31 페어차일드 세미컨덕터 코포레이션 미세 전자 기계 시스템에 미치는 응력을 감소시키기 위한 패키징
EP2616771B8 (en) 2010-09-18 2018-12-19 Fairchild Semiconductor Corporation Micromachined monolithic 6-axis inertial sensor
WO2012040211A2 (en) 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
KR101311966B1 (ko) 2010-09-20 2013-10-14 페어차일드 세미컨덕터 코포레이션 감소된 션트 커패시턴스를 갖는 관통 실리콘 비아
DE102010063065A1 (de) * 2010-12-14 2012-06-14 Endress + Hauser Gmbh + Co. Kg Drucksensor und Verfahren zu dessen Herstellung+
DE112011104403T5 (de) * 2010-12-15 2013-09-19 Panasonic Corporation Halbleiterdrucksensor
US7998777B1 (en) * 2010-12-15 2011-08-16 General Electric Company Method for fabricating a sensor
CN102183335B (zh) * 2011-03-15 2015-10-21 迈尔森电子（天津）有限公司 Mems压力传感器及其制作方法
US8709848B2 (en) * 2011-04-15 2014-04-29 Freescale Semiconductor, Inc. Method for etched cavity devices
US8993451B2 (en) * 2011-04-15 2015-03-31 Freescale Semiconductor, Inc. Etching trenches in a substrate
US8466523B2 (en) * 2011-10-07 2013-06-18 Continental Automotive Systems, Inc. Differential pressure sensor device
US9062972B2 (en) 2012-01-31 2015-06-23 Fairchild Semiconductor Corporation MEMS multi-axis accelerometer electrode structure
US8978475B2 (en) 2012-02-01 2015-03-17 Fairchild Semiconductor Corporation MEMS proof mass with split z-axis portions
US9170164B2 (en) 2012-02-03 2015-10-27 Dieter Naegele-Preissmann Capacitive pressure sensor and a method of fabricating the same
US8754694B2 (en) 2012-04-03 2014-06-17 Fairchild Semiconductor Corporation Accurate ninety-degree phase shifter
US8742964B2 (en) 2012-04-04 2014-06-03 Fairchild Semiconductor Corporation Noise reduction method with chopping for a merged MEMS accelerometer sensor
US9488693B2 (en) 2012-04-04 2016-11-08 Fairchild Semiconductor Corporation Self test of MEMS accelerometer with ASICS integrated capacitors
EP2648334B1 (en) 2012-04-05 2020-06-10 Fairchild Semiconductor Corporation Mems device front-end charge amplifier
EP2647952B1 (en) 2012-04-05 2017-11-15 Fairchild Semiconductor Corporation Mems device automatic-gain control loop for mechanical amplitude drive
EP2647955B8 (en) 2012-04-05 2018-12-19 Fairchild Semiconductor Corporation MEMS device quadrature phase shift cancellation
US9069006B2 (en) 2012-04-05 2015-06-30 Fairchild Semiconductor Corporation Self test of MEMS gyroscope with ASICs integrated capacitors
US9094027B2 (en) 2012-04-12 2015-07-28 Fairchild Semiconductor Corporation Micro-electro-mechanical-system (MEMS) driver
US9625272B2 (en) 2012-04-12 2017-04-18 Fairchild Semiconductor Corporation MEMS quadrature cancellation and signal demodulation
US8833172B2 (en) * 2012-06-27 2014-09-16 Continental Automotive Systems, Inc Pressure sensing device with stepped cavity to minimize thermal noise
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
DE102013014881B4 (de) 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
JP5877248B2 (ja) * 2012-10-17 2016-03-02 株式会社鷺宮製作所 圧力センサおよび、それを備えるセンサユニット
GB2508908B (en) 2012-12-14 2017-02-15 Gen Electric Resonator device
CN103964370A (zh) * 2013-01-29 2014-08-06 北京大学 一种电容式压力传感器的制备方法
US8878316B2 (en) * 2013-02-22 2014-11-04 Continental Automotive Systems, Inc. Cap side bonding structure for backside absolute pressure sensors
JP2014169915A (ja) * 2013-03-04 2014-09-18 Denso Corp 半導体圧力センサの製造方法
JP5783297B2 (ja) * 2013-08-06 2015-09-24 株式会社デンソー 力学量センサ
US9546922B2 (en) * 2013-08-09 2017-01-17 Continental Automotive Systems, Inc. Absolute pressure sensor with improved cap bonding boundary
CN103674397B (zh) * 2013-12-03 2016-04-20 新会康宇测控仪器仪表工程有限公司 高过载背压式绝压传感器模块及其制造工艺
US9260294B2 (en) * 2013-12-27 2016-02-16 Intel Corporation Integration of pressure or inertial sensors into integrated circuit fabrication and packaging
WO2015153938A1 (en) * 2014-04-04 2015-10-08 Robert Bosch Gmbh Membrane-based sensor and method for robust manufacture of a membrane-based sensor
JP2017509860A (ja) * 2014-07-29 2017-04-06 シリコン マイクロストラクチャーズ， インコーポレイテッドＳｉｌｉｃｏｎ Ｍｉｃｒｏｓｔｒｕｃｔｕｒｅｓ， Ｉｎｃ． キャップで規定されたメンブレン（ｃａｐ−ｄｅｆｉｎｅｄ ｍｅｍｂｒａｎｅ）を有する圧力センサ
US20160178467A1 (en) * 2014-07-29 2016-06-23 Silicon Microstructures, Inc. Pressure sensor having cap-defined membrane
CN104296899B (zh) * 2014-09-28 2017-04-12 缪建民 高灵敏度硅压阻压力传感器及其制备方法
CN105527042B (zh) * 2014-10-15 2020-06-05 浙江盾安人工环境股份有限公司 压力传感器及其制造方法
US9939338B2 (en) * 2015-02-19 2018-04-10 Stmicroelectronics S.R.L. Pressure sensing device with cavity and related methods
CN106257254B (zh) 2015-06-22 2020-03-20 意法半导体股份有限公司 生成具有降低的环境温度依赖性的换能信号的压力传感器及其制造方法
CN105241369B (zh) 2015-08-17 2018-02-09 王文 一种mems应变计芯片及其制造工艺
JP6555214B2 (ja) * 2016-08-25 2019-08-07 株式会社デンソー 圧力センサ
US10481025B2 (en) 2017-01-26 2019-11-19 Rosemount Aerospace Inc. Piezoresistive sensor with spring flexures for stress isolation
JP6468304B2 (ja) * 2017-02-28 2019-02-13 株式会社デンソー 物理量センサ
KR101985946B1 (ko) * 2018-11-21 2019-06-04 호산엔지니어링(주) Msg를 이용한 로드셀 장치
CN109682510B (zh) * 2018-12-07 2021-05-04 中国电子科技集团公司第十三研究所 GaN高温压力传感器
CN109668661B (zh) * 2018-12-07 2021-05-04 中国电子科技集团公司第十三研究所 GaN高温压力传感器
CN111337166A (zh) * 2020-03-25 2020-06-26 电子科技大学 一种新型绝对压声表面波压力传感器的制备方法
EP4396551A1 (en) * 2021-08-31 2024-07-10 Huba Control Ag Metal pressure measuring cell
CN114577390A (zh) * 2022-03-03 2022-06-03 苏州跃芯微传感技术有限公司 一种低压mems压力传感器及其制备方法
CN117268624B (zh) * 2023-09-22 2026-04-17 深圳安培龙科技股份有限公司 一种硅压阻式压力传感芯片及其制备方法
CN118168706A (zh) * 2024-03-13 2024-06-11 京东方科技集团股份有限公司 压力传感器、压力传感器的制造方法、空调装置与车辆

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544786A (en) * 1978-09-27 1980-03-29 Hitachi Ltd Pressure sensor
US4525766A (en) * 1984-01-25 1985-06-25 Transensory Devices, Inc. Method and apparatus for forming hermetically sealed electrical feedthrough conductors
US4800758A (en) * 1986-06-23 1989-01-31 Rosemount Inc. Pressure transducer with stress isolation for hard mounting
JPH0810170B2 (ja) * 1987-03-06 1996-01-31 株式会社日立製作所 半導体絶対圧力センサの製造方法
US5095349A (en) * 1988-06-08 1992-03-10 Nippondenso Co., Ltd. Semiconductor pressure sensor and method of manufacturing same
US5157973A (en) * 1989-03-16 1992-10-27 Process Automation Business, Inc. Pressure sensor with integral overpressure protection
US5231301A (en) * 1991-10-02 1993-07-27 Lucas Novasensor Semiconductor sensor with piezoresistors and improved electrostatic structures
KR940010493B1 (ko) * 1991-11-21 1994-10-24 한국과학기술연구원 실리콘기판의 용융접합방법 및 장치
JPH07110277A (ja) * 1993-10-08 1995-04-25 Oki Electric Ind Co Ltd シリコン圧力センサ
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
JP3401992B2 (ja) * 1995-05-17 2003-04-28 株式会社デンソー 半導体感歪センサ
US5600071A (en) * 1995-09-05 1997-02-04 Motorola, Inc. Vertically integrated sensor structure and method
US6472244B1 (en) * 1996-07-31 2002-10-29 Sgs-Thomson Microelectronics S.R.L. Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material
DE69729753T2 (de) * 1996-10-07 2005-08-04 Lucas Novasensor Inc., Fremont 5 Mikrometer tiefer spitzer Kanalhohlraum durch oxidierendes Fusion Bonding von Silizium Substraten und Stop Ätzung
JPH10325772A (ja) * 1997-05-27 1998-12-08 Nissan Motor Co Ltd 半導体圧力センサおよびその製造方法
DE69922727T2 (de) * 1998-03-31 2005-12-15 Hitachi, Ltd. Kapazitiver Druckwandler
JPH11311579A (ja) * 1998-04-28 1999-11-09 Matsushita Electric Works Ltd 半導体圧力センサのダイアフラム形成方法
US6074891A (en) * 1998-06-16 2000-06-13 Delphi Technologies, Inc. Process for verifying a hermetic seal and semiconductor device therefor
AU5215099A (en) 1998-07-07 2000-01-24 Goodyear Tire And Rubber Company, The Method of fabricating silicon capacitive sensor
JP3545224B2 (ja) * 1998-10-06 2004-07-21 株式会社日立ユニシアオートモティブ 圧力センサ
US6406636B1 (en) * 1999-06-02 2002-06-18 Megasense, Inc. Methods for wafer to wafer bonding using microstructures
JP2002039892A (ja) * 2000-07-28 2002-02-06 Matsushita Electric Works Ltd 半導体圧力センサとその製造方法
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
EP1359402B1 (en) 2002-05-01 2014-10-01 Infineon Technologies AG Pressure sensor
US6647794B1 (en) * 2002-05-06 2003-11-18 Rosemount Inc. Absolute pressure sensor
DE10257097B4 (de) 2002-12-05 2005-12-22 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von mikroelektromechanischen Systemen (Microelectromechanical Systems: MEMS) mittels Silizium-Hochtemperatur-Fusionsbonden
JP2005043159A (ja) * 2003-07-25 2005-02-17 Hitachi Unisia Automotive Ltd 圧力センサ
EP1522521B1 (en) 2003-10-10 2015-12-09 Infineon Technologies AG Capacitive sensor
JP4314977B2 (ja) 2003-11-20 2009-08-19 パナソニック電工株式会社 圧力センサ及び該圧力センサの製造方法
JP2005221453A (ja) * 2004-02-09 2005-08-18 Denso Corp 圧力センサ

Also Published As

Publication number Publication date
EP1920229A2 (en) 2008-05-14
CN101248340A (zh) 2008-08-20
JP5342236B2 (ja) 2013-11-13
WO2007024911A2 (en) 2007-03-01
JP2009506323A (ja) 2009-02-12
EP1920229B1 (en) 2011-11-02
CN101248340B (zh) 2012-11-14
KR101296031B1 (ko) 2013-08-12
KR20080031969A (ko) 2008-04-11
WO2007024911A3 (en) 2007-06-14
US7622782B2 (en) 2009-11-24
US20070052046A1 (en) 2007-03-08

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