ATE529886T1 - Herstellungsverfahren für eine elektroleitfähige kupferstrukturierungsschicht durch laserbestrahlung - Google Patents

Herstellungsverfahren für eine elektroleitfähige kupferstrukturierungsschicht durch laserbestrahlung

Info

Publication number
ATE529886T1
ATE529886T1 AT08778929T AT08778929T ATE529886T1 AT E529886 T1 ATE529886 T1 AT E529886T1 AT 08778929 T AT08778929 T AT 08778929T AT 08778929 T AT08778929 T AT 08778929T AT E529886 T1 ATE529886 T1 AT E529886T1
Authority
AT
Austria
Prior art keywords
copper
patterning layer
particles
based particle
production process
Prior art date
Application number
AT08778929T
Other languages
English (en)
Inventor
Woo-Ram Lee
Sang-Ho Kim
Tae-Su Kim
So-Won Kim
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Application granted granted Critical
Publication of ATE529886T1 publication Critical patent/ATE529886T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0209—Inorganic, non-metallic particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT08778929T 2007-07-26 2008-07-24 Herstellungsverfahren für eine elektroleitfähige kupferstrukturierungsschicht durch laserbestrahlung ATE529886T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20070075340 2007-07-26
KR1020080022135A KR100951320B1 (ko) 2007-07-26 2008-03-10 레이저 조사에 의한 전기전도성 구리 패턴층의 형성방법
PCT/KR2008/004340 WO2009014391A2 (en) 2007-07-26 2008-07-24 Preparation method of electroconductive copper patterning layer by laser irradiation

Publications (1)

Publication Number Publication Date
ATE529886T1 true ATE529886T1 (de) 2011-11-15

Family

ID=40683078

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08778929T ATE529886T1 (de) 2007-07-26 2008-07-24 Herstellungsverfahren für eine elektroleitfähige kupferstrukturierungsschicht durch laserbestrahlung

Country Status (7)

Country Link
US (1) US8394465B2 (de)
EP (1) EP2183767B1 (de)
JP (1) JP5449154B2 (de)
KR (1) KR100951320B1 (de)
CN (1) CN101790777B (de)
AT (1) ATE529886T1 (de)
WO (1) WO2009014391A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014067617A (ja) * 2012-09-26 2014-04-17 Fujifilm Corp 導電膜の製造方法および導電膜形成用組成物
JP6042793B2 (ja) * 2012-12-07 2016-12-14 富士フイルム株式会社 導電膜の製造方法、プリント配線基板
US10622244B2 (en) 2013-02-18 2020-04-14 Orbotech Ltd. Pulsed-mode direct-write laser metallization
JP2016516211A (ja) 2013-02-18 2016-06-02 オルボテック リミテッド ツーステップの直接描画レーザ・メタライゼーション
JP2014199720A (ja) * 2013-03-29 2014-10-23 富士フイルム株式会社 導電膜形成用組成物およびこれを用いる導電膜の製造方法
CN104185378A (zh) * 2013-05-21 2014-12-03 群创光电股份有限公司 导电线路的制备方法、以及具有导电线路的装置
TWI471071B (zh) * 2013-05-21 2015-01-21 Innolux Corp 導電線路之製備方法、以及具有導電線路之裝置
US10537027B2 (en) 2013-08-02 2020-01-14 Orbotech Ltd. Method producing a conductive path on a substrate
JP2015050107A (ja) * 2013-09-03 2015-03-16 富士フイルム株式会社 導電膜の製造方法
US20170105287A1 (en) * 2015-10-12 2017-04-13 Tyco Electronics Corporation Process of Producing Electronic Component and an Electronic Component
US10793965B2 (en) 2016-08-29 2020-10-06 Board Of Trustees Of The University Of Arkansas Light-directed electrochemical patterning of copper structures
JP7130631B2 (ja) * 2017-05-18 2022-09-05 株式会社ダイセル 導体の製造方法、配線基板の製造方法及び導体形成用組成物の製造方法
CN110870392B (zh) 2017-07-18 2023-04-14 旭化成株式会社 具有导电性图案区域的结构体及其制造方法、层积体及其制造方法、以及铜布线
JP7291078B2 (ja) 2017-07-27 2023-06-14 旭化成株式会社 酸化銅インク及びこれを用いた導電性基板の製造方法、塗膜を含む製品及びこれを用いた製品の製造方法、導電性パターン付製品の製造方法、並びに、導電性パターン付製品
JP7430483B2 (ja) * 2017-11-10 2024-02-13 旭化成株式会社 導電性パターン領域付構造体及びその製造方法
DE102019006709A1 (de) * 2019-09-25 2021-03-25 Heraeus Deutschland GmbH & Co. KG Kontaktierung flexibler Elektroden

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03262187A (ja) * 1990-03-13 1991-11-21 Fujitsu Ltd パターン形成方法
JPH0537126A (ja) * 1991-07-30 1993-02-12 Toshiba Corp 金属酸化物を用いた配線基板および情報記録媒体
JPH05335725A (ja) * 1992-05-29 1993-12-17 Kusuo Sato レーザ光線照射による電気回路形成方法
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
TW476073B (en) * 1999-12-09 2002-02-11 Ebara Corp Solution containing metal component, method of and apparatus for forming thin metal film
JP2001167633A (ja) * 1999-12-09 2001-06-22 Ebara Corp 金属成分含有溶液及び金属薄膜形成方法
JP2003073591A (ja) * 2001-09-03 2003-03-12 Fuji Photo Film Co Ltd インク組成物およびインクジェット記録方法
DE10362231B4 (de) * 2002-12-03 2013-09-05 Asahi Kasei Kabushiki Kaisha Kupferoxid-Ultrafeinteilchen
JP2004277868A (ja) * 2003-03-19 2004-10-07 Mitsubishi Paper Mills Ltd 導電性組成物の作製方法
JP2005079010A (ja) * 2003-09-02 2005-03-24 Seiko Epson Corp 導電膜パターンの形成方法、電気光学装置及び電子機器
JP2005281781A (ja) 2004-03-30 2005-10-13 Kenji Sumiyama 銅ナノ粒子の製造方法
JP2006013321A (ja) 2004-06-29 2006-01-12 Chubu Electric Power Co Inc プリント配線板の製造装置及びプリント配線板の製造方法
JP2006096655A (ja) 2004-09-06 2006-04-13 Fuji Photo Film Co Ltd 酸化第一銅粒子の製造方法及び酸化第一銅粒子
JP4782397B2 (ja) 2004-09-27 2011-09-28 京セラ株式会社 導体ペーストおよびそれを用いた配線基板の製造方法
JP2006201538A (ja) * 2005-01-21 2006-08-03 Seiko Epson Corp マスク、マスクの製造方法、パターン形成方法、配線パターン形成方法
JP4337744B2 (ja) * 2005-02-04 2009-09-30 セイコーエプソン株式会社 膜パターンの形成方法、アクティブマトリクス基板の製造方法
KR100727451B1 (ko) * 2005-04-26 2007-06-13 주식회사 잉크테크 금속 잉크 조성물
US7691294B2 (en) * 2005-03-04 2010-04-06 Inktec Co., Ltd. Conductive inks and manufacturing method thereof

Also Published As

Publication number Publication date
WO2009014391A3 (en) 2009-03-19
WO2009014391A2 (en) 2009-01-29
KR100951320B1 (ko) 2010-04-05
US8394465B2 (en) 2013-03-12
EP2183767A4 (de) 2011-01-05
JP2010534932A (ja) 2010-11-11
EP2183767A2 (de) 2010-05-12
US20100129566A1 (en) 2010-05-27
KR20090012029A (ko) 2009-02-02
EP2183767B1 (de) 2011-10-19
CN101790777B (zh) 2012-05-02
JP5449154B2 (ja) 2014-03-19
CN101790777A (zh) 2010-07-28

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