ATE521989T1 - Eingebettete rückhaltescheiben für zuverlässige stapelpfade in elektronischen substraten - Google Patents

Eingebettete rückhaltescheiben für zuverlässige stapelpfade in elektronischen substraten

Info

Publication number
ATE521989T1
ATE521989T1 AT09731078T AT09731078T ATE521989T1 AT E521989 T1 ATE521989 T1 AT E521989T1 AT 09731078 T AT09731078 T AT 09731078T AT 09731078 T AT09731078 T AT 09731078T AT E521989 T1 ATE521989 T1 AT E521989T1
Authority
AT
Austria
Prior art keywords
constrainer
electronic substrates
retaining discs
disc
embedded retaining
Prior art date
Application number
AT09731078T
Other languages
English (en)
Inventor
Sri Sri-Jayantha
David Russell
Karan C Kacker
David Questad
Douglas Powell
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE521989T1 publication Critical patent/ATE521989T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structure Of Printed Boards (AREA)
AT09731078T 2008-01-27 2009-01-20 Eingebettete rückhaltescheiben für zuverlässige stapelpfade in elektronischen substraten ATE521989T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/020,561 US20090189289A1 (en) 2008-01-27 2008-01-27 Embedded constrainer discs for reliable stacked vias in electronic substrates
PCT/EP2009/050585 WO2009124785A1 (en) 2008-01-27 2009-01-20 Embedded constrainer discs for reliable stacked vias in electronic substrates

Publications (1)

Publication Number Publication Date
ATE521989T1 true ATE521989T1 (de) 2011-09-15

Family

ID=40898382

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09731078T ATE521989T1 (de) 2008-01-27 2009-01-20 Eingebettete rückhaltescheiben für zuverlässige stapelpfade in elektronischen substraten

Country Status (8)

Country Link
US (1) US20090189289A1 (de)
EP (1) EP2238620B1 (de)
JP (1) JP5182827B2 (de)
KR (1) KR101285030B1 (de)
CN (1) CN101926000A (de)
AT (1) ATE521989T1 (de)
TW (1) TW200947657A (de)
WO (1) WO2009124785A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449152B (zh) * 2011-12-21 2014-08-11 Ind Tech Res Inst 半導體元件堆疊結構
US11270955B2 (en) * 2018-11-30 2022-03-08 Texas Instruments Incorporated Package substrate with CTE matching barrier ring around microvias

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08172264A (ja) * 1994-12-20 1996-07-02 Hitachi Chem Co Ltd 多層配線板および金属箔張り積層板の製造法
JP4204150B2 (ja) * 1998-10-16 2009-01-07 パナソニック株式会社 多層回路基板
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
JP4052434B2 (ja) * 2001-02-05 2008-02-27 Ｔｄｋ株式会社 多層基板及びその製造方法
JP2003163453A (ja) * 2001-11-27 2003-06-06 Matsushita Electric Works Ltd 多層配線板の製造方法及び多層配線板
JP2005011883A (ja) 2003-06-17 2005-01-13 Shinko Electric Ind Co Ltd 配線基板、半導体装置および配線基板の製造方法
JP2005019730A (ja) * 2003-06-26 2005-01-20 Kyocera Corp 配線基板およびそれを用いた電子装置
KR20050072881A (ko) * 2004-01-07 2005-07-12 삼성전자주식회사 임피던스 정합 비아 홀을 구비하는 다층기판
JP2005251792A (ja) * 2004-03-01 2005-09-15 Fujitsu Ltd 配線基板およびその製造方法
US7523545B2 (en) 2006-04-19 2009-04-28 Dynamic Details, Inc. Methods of manufacturing printed circuit boards with stacked micro vias
JP2008124398A (ja) * 2006-11-15 2008-05-29 Shinko Electric Ind Co Ltd 半導体パッケージおよびその製造方法

Also Published As

Publication number Publication date
JP2011511436A (ja) 2011-04-07
EP2238620A1 (de) 2010-10-13
CN101926000A (zh) 2010-12-22
US20090189289A1 (en) 2009-07-30
WO2009124785A1 (en) 2009-10-15
TW200947657A (en) 2009-11-16
KR20100111280A (ko) 2010-10-14
KR101285030B1 (ko) 2013-07-11
JP5182827B2 (ja) 2013-04-17
EP2238620B1 (de) 2011-08-24

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