ATE519226T1 - Auf nanoröhren basierender schaltunsgverbindungsansatz - Google Patents
Auf nanoröhren basierender schaltunsgverbindungsansatzInfo
- Publication number
- ATE519226T1 ATE519226T1 AT05800438T AT05800438T ATE519226T1 AT E519226 T1 ATE519226 T1 AT E519226T1 AT 05800438 T AT05800438 T AT 05800438T AT 05800438 T AT05800438 T AT 05800438T AT E519226 T1 ATE519226 T1 AT E519226T1
- Authority
- AT
- Austria
- Prior art keywords
- circuit connection
- based circuit
- nanotube based
- connection approach
- electrical connection
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49877—Carbon, e.g. fullerenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/45193—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/451 - H01L2224/45191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49162—Manufacturing circuit on or in base by using wire as conductive path
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Carbon And Carbon Compounds (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62545004P | 2004-11-04 | 2004-11-04 | |
PCT/IB2005/053624 WO2006048845A2 (en) | 2004-11-04 | 2005-11-04 | Carbon nanotube-based conductive connections for integrated circuit devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE519226T1 true ATE519226T1 (de) | 2011-08-15 |
Family
ID=35761350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05800438T ATE519226T1 (de) | 2004-11-04 | 2005-11-04 | Auf nanoröhren basierender schaltunsgverbindungsansatz |
Country Status (8)
Country | Link |
---|---|
US (1) | US8680677B2 (de) |
EP (1) | EP1810332B1 (de) |
JP (1) | JP2008519454A (de) |
KR (1) | KR20070084426A (de) |
CN (1) | CN101095230B (de) |
AT (1) | ATE519226T1 (de) |
TW (1) | TW200631111A (de) |
WO (1) | WO2006048845A2 (de) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006054948B4 (de) | 2006-11-22 | 2017-03-09 | Drägerwerk AG & Co. KGaA | Elektrochemischer Gassensor enthaltend elektrische Verbindungsleitungen oder Gehäuse-Kontaktbrücken aus Kohlenstoffnanoröhren |
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
US9005755B2 (en) | 2007-01-03 | 2015-04-14 | Applied Nanostructured Solutions, Llc | CNS-infused carbon nanomaterials and process therefor |
US8951632B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused carbon fiber materials and process therefor |
US8158217B2 (en) | 2007-01-03 | 2012-04-17 | Applied Nanostructured Solutions, Llc | CNT-infused fiber and method therefor |
US8951631B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused metal fiber materials and process therefor |
JP5194513B2 (ja) | 2007-03-29 | 2013-05-08 | 富士通セミコンダクター株式会社 | 配線構造及びその形成方法 |
EP2469657A1 (de) | 2007-08-07 | 2012-06-27 | Nanocomp Technologies, Inc. | Elektrisch und thermisch leitende nichtmetallische Adapter auf Nanostrukturbasis |
CN101497437B (zh) * | 2008-02-01 | 2012-11-21 | 清华大学 | 碳纳米管复合膜的制备方法 |
JP4589440B2 (ja) * | 2008-02-01 | 2010-12-01 | ツィンファ ユニバーシティ | 線状カーボンナノチューブ構造体 |
CN101556839B (zh) * | 2008-04-09 | 2011-08-24 | 清华大学 | 线缆 |
JP2010056482A (ja) * | 2008-08-29 | 2010-03-11 | Fujitsu Ltd | プリント配線板および導電材料 |
CA2750484A1 (en) | 2009-02-17 | 2010-12-16 | Applied Nanostructured Solutions, Llc | Composites comprising carbon nanotubes on fiber |
EP2401416B1 (de) | 2009-02-27 | 2021-03-17 | Applied NanoStructured Solutions, LLC | Kohlenstoffnanoröhrchenwachstum bei niedriger temperatur mittels gasvorwärmungsverfahren |
US20100227134A1 (en) | 2009-03-03 | 2010-09-09 | Lockheed Martin Corporation | Method for the prevention of nanoparticle agglomeration at high temperatures |
US9111658B2 (en) | 2009-04-24 | 2015-08-18 | Applied Nanostructured Solutions, Llc | CNS-shielded wires |
WO2010144183A1 (en) | 2009-04-24 | 2010-12-16 | Lockheed Martin Corporation | Cnt-based signature control material |
KR101696207B1 (ko) | 2009-04-27 | 2017-01-13 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 복합 구조물 제빙을 위한 cnt계 저항 가열 |
US8354593B2 (en) * | 2009-07-10 | 2013-01-15 | Nanocomp Technologies, Inc. | Hybrid conductors and method of making same |
JP5823393B2 (ja) | 2009-08-03 | 2015-11-25 | アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニーApplied Nanostructuredsolutions, Llc | 複合繊維へのナノ粒子の組み込み |
EP2496739A4 (de) * | 2009-11-02 | 2014-07-02 | Applied Nanostructured Sols | Cnt-infundierte aramidfasermaterialien und verfahren dafür |
KR20120117978A (ko) | 2009-11-23 | 2012-10-25 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 카본 나노튜브-주입된 섬유 재료를 포함하는 세라믹 복합재료 및 이의 제조방법 |
WO2011126518A2 (en) | 2009-11-23 | 2011-10-13 | Applied Nanostructured Solutions, Llc | Cnt-tailored composite air-based structures |
EP2513250A4 (de) | 2009-12-14 | 2015-05-27 | Applied Nanostructured Sols | Feuerfeste verbundmaterialien und artikel mit kohlenstoffnanoröhren-infundierten fasermaterialien |
US9167736B2 (en) | 2010-01-15 | 2015-10-20 | Applied Nanostructured Solutions, Llc | CNT-infused fiber as a self shielding wire for enhanced power transmission line |
CA2785803A1 (en) | 2010-02-02 | 2011-11-24 | Applied Nanostructured Solutions, Llc | Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom |
KR101787645B1 (ko) | 2010-03-02 | 2017-10-23 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 카본 나노튜브-주입된 전극 재료를 포함하는 나선형 권선 전기 장치 및 이의 제조를 위한 방법 및 장치 |
WO2011109485A1 (en) | 2010-03-02 | 2011-09-09 | Applied Nanostructured Solutions,Llc | Electrical devices containing carbon nanotube-infused fibers and methods for production thereof |
US8780526B2 (en) | 2010-06-15 | 2014-07-15 | Applied Nanostructured Solutions, Llc | Electrical devices containing carbon nanotube-infused fibers and methods for production thereof |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US9017854B2 (en) | 2010-08-30 | 2015-04-28 | Applied Nanostructured Solutions, Llc | Structural energy storage assemblies and methods for production thereof |
AU2011302314A1 (en) | 2010-09-14 | 2013-02-28 | Applied Nanostructured Solutions, Llc | Glass substrates having carbon nanotubes grown thereon and methods for production thereof |
WO2012040004A1 (en) | 2010-09-22 | 2012-03-29 | Applied Nanostructured Solutions, Llc | Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof |
CA2782976A1 (en) | 2010-09-23 | 2012-03-29 | Applied Nanostructured Solutions, Llc | Cnt-infused fiber as a self shielding wire for enhanced power transmission line |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
KR101829907B1 (ko) * | 2011-09-02 | 2018-02-19 | 엘에스전선 주식회사 | 탄소 동소체로 코팅된 선재를 포함하는 본딩 와이어 |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
CN103178027B (zh) * | 2011-12-21 | 2016-03-09 | 清华大学 | 散热结构及应用该散热结构的电子设备 |
US8946757B2 (en) | 2012-02-17 | 2015-02-03 | Invensas Corporation | Heat spreading substrate with embedded interconnects |
US9085464B2 (en) | 2012-03-07 | 2015-07-21 | Applied Nanostructured Solutions, Llc | Resistance measurement system and method of using the same |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
CN103050798B (zh) * | 2012-12-13 | 2015-02-04 | 中国电力科学研究院 | 一种石墨烯纳米材料导线接续金具及接续方法 |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
CN105097748B (zh) * | 2014-04-23 | 2018-07-13 | 北京富纳特创新科技有限公司 | 键合线以及半导体封装件 |
US10381326B2 (en) * | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US9761554B2 (en) | 2015-05-07 | 2017-09-12 | Invensas Corporation | Ball bonding metal wire bond wires to metal pads |
US10490528B2 (en) | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
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US10043779B2 (en) | 2015-11-17 | 2018-08-07 | Invensas Corporation | Packaged microelectronic device for a package-on-package device |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970011623B1 (en) * | 1994-01-13 | 1997-07-12 | Samsung Electronics Co Ltd | Lead frame of semiconductor package |
US6231744B1 (en) * | 1997-04-24 | 2001-05-15 | Massachusetts Institute Of Technology | Process for fabricating an array of nanowires |
US6299812B1 (en) * | 1999-08-16 | 2001-10-09 | The Board Of Regents Of The University Of Oklahoma | Method for forming a fibers/composite material having an anisotropic structure |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US7335603B2 (en) * | 2000-02-07 | 2008-02-26 | Vladimir Mancevski | System and method for fabricating logic devices comprising carbon nanotube transistors |
WO2002017397A1 (de) * | 2000-08-24 | 2002-02-28 | Infineon Technologies Ag | Elektronisches element, verfahren zum herstellen eines solchen und halbleiterelement |
US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
DE10134073C1 (de) | 2001-07-13 | 2003-02-06 | Zimmer Ag | Verfahren zum Aufspulen von Filamenten |
CN1261959C (zh) * | 2001-08-28 | 2006-06-28 | 翰立光电股份有限公司 | 场发射显示器中发射极的制造方法 |
CN1414590A (zh) * | 2001-10-26 | 2003-04-30 | 东元资讯股份有限公司 | 阴极射线管使用的阴极及其产生电子的方法 |
JP2003142755A (ja) * | 2001-11-05 | 2003-05-16 | Fujitsu Ltd | 磁気抵抗センサ及びその製造方法 |
WO2003078315A2 (en) | 2002-03-20 | 2003-09-25 | Facultes Universitaires Notre-Dame De La Paix | Nanocomposites: products, process for obtaining them and uses thereof |
JP4974263B2 (ja) * | 2002-05-20 | 2012-07-11 | 富士通株式会社 | 半導体装置の製造方法 |
US7518247B2 (en) * | 2002-11-29 | 2009-04-14 | Nec Corporation | Semiconductor device and its manufacturing method |
US6875374B1 (en) * | 2003-02-26 | 2005-04-05 | The Regents Of The University Of California | Ceramic materials reinforced with single-wall carbon nanotubes as electrical conductors |
JP2005120427A (ja) * | 2003-10-16 | 2005-05-12 | Matsushita Electric Works Ltd | 電気接点用材料及び電気接点 |
-
2005
- 2005-11-02 TW TW094138486A patent/TW200631111A/zh unknown
- 2005-11-04 AT AT05800438T patent/ATE519226T1/de not_active IP Right Cessation
- 2005-11-04 WO PCT/IB2005/053624 patent/WO2006048845A2/en active Application Filing
- 2005-11-04 US US11/718,712 patent/US8680677B2/en active Active
- 2005-11-04 JP JP2007539701A patent/JP2008519454A/ja not_active Abandoned
- 2005-11-04 CN CN2005800458466A patent/CN101095230B/zh not_active Expired - Fee Related
- 2005-11-04 EP EP05800438A patent/EP1810332B1/de active Active
- 2005-11-04 KR KR1020077011514A patent/KR20070084426A/ko not_active Application Discontinuation
Also Published As
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EP1810332A2 (de) | 2007-07-25 |
KR20070084426A (ko) | 2007-08-24 |
WO2006048845A2 (en) | 2006-05-11 |
US20090212430A1 (en) | 2009-08-27 |
US8680677B2 (en) | 2014-03-25 |
JP2008519454A (ja) | 2008-06-05 |
EP1810332B1 (de) | 2011-08-03 |
CN101095230B (zh) | 2010-09-01 |
CN101095230A (zh) | 2007-12-26 |
WO2006048845A3 (en) | 2006-08-03 |
TW200631111A (en) | 2006-09-01 |
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