ATE518229T1 - Verfahren zur programmierung eines nichtflüchtigen mehrzustandsspeichers unter verwendung einer intelligenten verifizierung - Google Patents
Verfahren zur programmierung eines nichtflüchtigen mehrzustandsspeichers unter verwendung einer intelligenten verifizierungInfo
- Publication number
- ATE518229T1 ATE518229T1 AT06826985T AT06826985T ATE518229T1 AT E518229 T1 ATE518229 T1 AT E518229T1 AT 06826985 T AT06826985 T AT 06826985T AT 06826985 T AT06826985 T AT 06826985T AT E518229 T1 ATE518229 T1 AT E518229T1
- Authority
- AT
- Austria
- Prior art keywords
- sub
- distribution
- storage elements
- volatile storage
- programmed
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/259,799 US7366022B2 (en) | 2005-10-27 | 2005-10-27 | Apparatus for programming of multi-state non-volatile memory using smart verify |
US11/260,658 US7301817B2 (en) | 2005-10-27 | 2005-10-27 | Method for programming of multi-state non-volatile memory using smart verify |
PCT/US2006/042179 WO2007050976A1 (en) | 2005-10-27 | 2006-10-26 | Method for programming of multi-state non-volatile memory using smart verify |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE518229T1 true ATE518229T1 (de) | 2011-08-15 |
Family
ID=37806696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06826985T ATE518229T1 (de) | 2005-10-27 | 2006-10-26 | Verfahren zur programmierung eines nichtflüchtigen mehrzustandsspeichers unter verwendung einer intelligenten verifizierung |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1946323B1 (de) |
JP (1) | JP4855474B2 (de) |
KR (1) | KR101314306B1 (de) |
AT (1) | ATE518229T1 (de) |
TW (1) | TWI311762B (de) |
WO (1) | WO2007050976A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7813188B2 (en) * | 2007-09-10 | 2010-10-12 | Hynix Semiconductor Inc. | Non-volatile memory device and a method of programming a multi level cell in the same |
US7768836B2 (en) * | 2008-10-10 | 2010-08-03 | Sandisk Corporation | Nonvolatile memory and method with reduced program verify by ignoring fastest and/or slowest programming bits |
KR100996108B1 (ko) | 2009-01-21 | 2010-11-22 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 프로그램 방법 |
KR101012982B1 (ko) * | 2009-06-30 | 2011-02-10 | 주식회사 하이닉스반도체 | 불휘발성 메모리 소자의 동작 방법 |
US8223556B2 (en) * | 2009-11-25 | 2012-07-17 | Sandisk Technologies Inc. | Programming non-volatile memory with a reduced number of verify operations |
JP2011150749A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101676816B1 (ko) | 2010-02-11 | 2016-11-18 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8345482B2 (en) * | 2010-12-15 | 2013-01-01 | Micron Technology, Inc. | Methods for segmented programming and memory devices |
US9564226B1 (en) * | 2015-10-30 | 2017-02-07 | Sandisk Technologies Llc | Smart verify for programming non-volatile memory |
TWI604449B (zh) * | 2016-08-31 | 2017-11-01 | 旺宏電子股份有限公司 | 記憶體裝置與其程式化方法 |
US11532354B2 (en) | 2020-03-22 | 2022-12-20 | Silicon Storage Technology, Inc. | Precision tuning of a page or word of non-volatile memory cells and associated high voltage circuits for an analog neural memory array in an artificial neural network |
KR20220120033A (ko) | 2021-02-22 | 2022-08-30 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3730272B2 (ja) | 1994-09-17 | 2005-12-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR100253868B1 (ko) * | 1995-11-13 | 2000-05-01 | 니시무로 타이죠 | 불휘발성 반도체기억장치 |
US5867429A (en) | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US6538923B1 (en) * | 2001-02-26 | 2003-03-25 | Advanced Micro Devices, Inc. | Staircase program verify for multi-level cell flash memory designs |
US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
JP3935139B2 (ja) * | 2002-11-29 | 2007-06-20 | 株式会社東芝 | 半導体記憶装置 |
US7073103B2 (en) * | 2002-12-05 | 2006-07-04 | Sandisk Corporation | Smart verify for multi-state memories |
US7002843B2 (en) * | 2004-01-27 | 2006-02-21 | Sandisk Corporation | Variable current sinking for coarse/fine programming of non-volatile memory |
-
2006
- 2006-10-26 JP JP2008538049A patent/JP4855474B2/ja active Active
- 2006-10-26 EP EP06826985A patent/EP1946323B1/de active Active
- 2006-10-26 AT AT06826985T patent/ATE518229T1/de not_active IP Right Cessation
- 2006-10-26 WO PCT/US2006/042179 patent/WO2007050976A1/en active Application Filing
- 2006-10-26 KR KR1020087012605A patent/KR101314306B1/ko active IP Right Grant
- 2006-10-26 TW TW095139561A patent/TWI311762B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200733114A (en) | 2007-09-01 |
KR101314306B1 (ko) | 2013-10-02 |
EP1946323A1 (de) | 2008-07-23 |
JP2009514138A (ja) | 2009-04-02 |
EP1946323B1 (de) | 2011-07-27 |
WO2007050976A1 (en) | 2007-05-03 |
KR20080089335A (ko) | 2008-10-06 |
TWI311762B (en) | 2009-07-01 |
JP4855474B2 (ja) | 2012-01-18 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |