ATE512466T1 - Photovoltaische zelle mit mehreren übergängen mit dünner erster (oberer) unterzelle und dickerer zweiter unterzelle aus dem gleichen oder ähnlichem halbleitermaterial - Google Patents

Photovoltaische zelle mit mehreren übergängen mit dünner erster (oberer) unterzelle und dickerer zweiter unterzelle aus dem gleichen oder ähnlichem halbleitermaterial

Info

Publication number
ATE512466T1
ATE512466T1 AT01106191T AT01106191T ATE512466T1 AT E512466 T1 ATE512466 T1 AT E512466T1 AT 01106191 T AT01106191 T AT 01106191T AT 01106191 T AT01106191 T AT 01106191T AT E512466 T1 ATE512466 T1 AT E512466T1
Authority
AT
Austria
Prior art keywords
cell
subcell
sub
semiconductor material
thicker
Prior art date
Application number
AT01106191T
Other languages
English (en)
Inventor
Richard R King
Nasser H Karam
David E Joslin
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Application granted granted Critical
Publication of ATE512466T1 publication Critical patent/ATE512466T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AT01106191T 2000-03-15 2001-03-14 Photovoltaische zelle mit mehreren übergängen mit dünner erster (oberer) unterzelle und dickerer zweiter unterzelle aus dem gleichen oder ähnlichem halbleitermaterial ATE512466T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/544,834 US6316715B1 (en) 2000-03-15 2000-03-15 Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material

Publications (1)

Publication Number Publication Date
ATE512466T1 true ATE512466T1 (de) 2011-06-15

Family

ID=24173777

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01106191T ATE512466T1 (de) 2000-03-15 2001-03-14 Photovoltaische zelle mit mehreren übergängen mit dünner erster (oberer) unterzelle und dickerer zweiter unterzelle aus dem gleichen oder ähnlichem halbleitermaterial

Country Status (4)

Country Link
US (1) US6316715B1 (de)
EP (1) EP1134813B1 (de)
AT (1) ATE512466T1 (de)
CA (1) CA2340997C (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6794265B2 (en) 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6660928B1 (en) 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
AU2002305659A1 (en) * 2002-05-21 2003-12-12 Midwest Research Institute Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
US8173891B2 (en) * 2002-05-21 2012-05-08 Alliance For Sustainable Energy, Llc Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps
US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US7217882B2 (en) * 2002-05-24 2007-05-15 Cornell Research Foundation, Inc. Broad spectrum solar cell
US7126052B2 (en) * 2002-10-02 2006-10-24 The Boeing Company Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
US7122734B2 (en) * 2002-10-23 2006-10-17 The Boeing Company Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
US7071407B2 (en) * 2002-10-31 2006-07-04 Emcore Corporation Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
AU2003297649A1 (en) * 2002-12-05 2004-06-30 Blue Photonics, Inc. High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
JP2004296658A (ja) * 2003-03-26 2004-10-21 Sharp Corp 多接合太陽電池およびその電流整合方法
US7812249B2 (en) * 2003-04-14 2010-10-12 The Boeing Company Multijunction photovoltaic cell grown on high-miscut-angle substrate
US7488890B2 (en) * 2003-04-21 2009-02-10 Sharp Kabushiki Kaisha Compound solar battery and manufacturing method thereof
US8227689B2 (en) * 2004-06-15 2012-07-24 The Boeing Company Solar cells having a transparent composition-graded buffer layer
US7807921B2 (en) * 2004-06-15 2010-10-05 The Boeing Company Multijunction solar cell having a lattice mismatched GrIII-GrV-X layer and a composition-graded buffer layer
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
US10069026B2 (en) 2005-12-19 2018-09-04 The Boeing Company Reduced band gap absorber for solar cells
US10381505B2 (en) 2007-09-24 2019-08-13 Solaero Technologies Corp. Inverted metamorphic multijunction solar cells including metamorphic layers
US8916769B2 (en) * 2008-10-01 2014-12-23 International Business Machines Corporation Tandem nanofilm interconnected semiconductor wafer solar cells
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
TWI427806B (zh) 2009-01-12 2014-02-21 Epistar Corp 堆疊型太陽能電池
KR20100084843A (ko) * 2009-01-19 2010-07-28 삼성전자주식회사 다중접합 태양전지
US9722131B2 (en) * 2009-03-16 2017-08-01 The Boeing Company Highly doped layer for tunnel junctions in solar cells
US8609984B2 (en) * 2009-06-24 2013-12-17 Florida State University Research Foundation, Inc. High efficiency photovoltaic cell for solar energy harvesting
TWI409959B (zh) * 2009-12-07 2013-09-21 Epistar Corp 太陽能電池元件及其裝置
CN103354250B (zh) * 2010-03-19 2016-03-02 晶元光电股份有限公司 一种具有渐变缓冲层太阳能电池
JP5852660B2 (ja) 2010-10-12 2016-02-03 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー 高効率なオプトエレクトロニクスのための大きなバンドギャップをもつｉｉｉ−ｖ族化合物
US11417788B2 (en) 2010-11-19 2022-08-16 The Boeing Company Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
US9818901B2 (en) * 2011-05-13 2017-11-14 International Business Machines Corporation Wafer bonded solar cells and fabrication methods
US8073645B2 (en) * 2011-05-30 2011-12-06 Cyrium Technologies Incorporated Apparatus and method to characterize multijunction photovoltaic solar cells
CN102244114A (zh) * 2011-06-22 2011-11-16 厦门市三安光电科技有限公司 一种高倍聚光多结太阳能电池及其制备方法
US20130048061A1 (en) * 2011-08-24 2013-02-28 International Business Machines Corporation Monolithic multi-junction photovoltaic cell and method
FR2981195A1 (fr) * 2011-10-11 2013-04-12 Soitec Silicon On Insulator Multi-jonctions dans un dispositif semi-conducteur forme par differentes techniques de depot
WO2013059708A2 (en) 2011-10-21 2013-04-25 University Of Utah Research Foundation Homogeneous multiple band gap devices
CN102790116B (zh) * 2012-07-19 2015-09-09 中国科学院苏州纳米技术与纳米仿生研究所 倒装GaInP/GaAs/Ge/Ge四结太阳能电池及其制备方法
CN102790119B (zh) * 2012-07-19 2015-12-16 中国科学院苏州纳米技术与纳米仿生研究所 GaInP/GaAs/Ge/Ge四结太阳能电池及其制备方法
CN102790121B (zh) * 2012-08-09 2015-12-16 厦门大学 具有两结锗子电池的四结太阳能电池及其制备方法
US11495705B2 (en) 2012-09-14 2022-11-08 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9099595B2 (en) 2012-09-14 2015-08-04 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9997659B2 (en) 2012-09-14 2018-06-12 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US11646388B2 (en) 2012-09-14 2023-05-09 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US9985160B2 (en) 2012-09-14 2018-05-29 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US10903383B2 (en) 2012-09-14 2021-01-26 The Boeing Company Group-IV solar cell structure using group-IV or III-V heterostructures
US20140150856A1 (en) * 2012-11-30 2014-06-05 Intellectual Discovery Co., Ltd. Photovoltaic module
KR20140082012A (ko) * 2012-12-21 2014-07-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US8580658B1 (en) 2012-12-21 2013-11-12 Solan, LLC Methods for fabricating graphene device topography and devices formed therefrom
TWI602315B (zh) * 2013-03-08 2017-10-11 索泰克公司 具有經組構成效能更佳之低帶隙主動層之感光元件及相關方法
US20140272309A1 (en) 2013-03-15 2014-09-18 Solan, LLC Non-Planar Graphite Based Devices and Fabrication Methods
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
DE102015006379B4 (de) * 2015-05-18 2022-03-17 Azur Space Solar Power Gmbh Skalierbare Spannungsquelle
US9899550B2 (en) 2015-08-12 2018-02-20 Toyota Motor Engineering & Manufacturing North America, Inc. Electric power transfer system using optical power transfer
US11563133B1 (en) 2015-08-17 2023-01-24 SolAero Techologies Corp. Method of fabricating multijunction solar cells for space applications
DE102015013514B4 (de) 2015-10-20 2024-04-18 Azur Space Solar Power Gmbh Optischer Empfängerbaustein
DE102015016047A1 (de) * 2015-12-10 2017-06-14 Azur Space Solar Power Gmbh Mehrfach-Solarzelle
DE102015016822B4 (de) * 2015-12-25 2023-01-05 Azur Space Solar Power Gmbh Stapelförmige Mehrfach-Solarzelle
DE102016001387A1 (de) * 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh Empfängerbaustein
DE102016001386A1 (de) * 2016-02-09 2017-08-10 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle
US10700230B1 (en) 2016-10-14 2020-06-30 Solaero Technologies Corp. Multijunction metamorphic solar cell for space applications
DE102016013749A1 (de) * 2016-11-18 2018-05-24 Azur Space Solar Power Gmbh Stapelförmige Halbleiterstruktur
TR201700484A2 (tr) * 2017-01-12 2017-10-23 Hat Teknoloji A S Güneş işiğindan elektri̇k üretmek i̇çi̇n bi̇r solar hücre ve solar panel
DE102017200700A1 (de) * 2017-01-18 2018-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mehrfachsolarzelle mit rückseitiger Germanium-Teilzelle und deren Verwendung
US11527667B2 (en) * 2017-04-27 2022-12-13 Alliance For Sustainable Energy, Llc Tunnel junctions for multijunction solar cells
US11264524B1 (en) * 2018-02-08 2022-03-01 Solaero Technologies Corp. Multijunction solar cells
RU2671549C1 (ru) * 2018-02-09 2018-11-01 Российская Федерация, от имени которой выступает Государственная корпорация по космической деятельности "РОСКОСМОС" Фотоэлектрический преобразователь с просветляющим нанопокрытием
DE102018001592A1 (de) * 2018-03-01 2019-09-05 Azur Space Solar Power Gmbh Mehrfachsolarzelle
DE102018009744A1 (de) 2018-12-14 2020-06-18 Azur Space Solar Power Gmbh Stapelförmige monolithische aufrecht-metamorphe Mehrfachsolarzelle
DE102018009850A1 (de) * 2018-12-19 2020-06-25 Azur Space Solar Power Gmbh Stapelförmige Mehrfachsolarzelle
US11563137B2 (en) 2019-09-16 2023-01-24 Meta Platforms Technologies, Llc Optical transformer
EP3799136B1 (de) * 2019-09-27 2023-02-01 AZUR SPACE Solar Power GmbH Monolithische mehrfachsolarzelle mit genau vier teilzellen
US11658256B2 (en) 2019-12-16 2023-05-23 Solaero Technologies Corp. Multijunction solar cells
US11978813B1 (en) * 2019-12-23 2024-05-07 United States Of America As Represented By The Secretary Of The Air Force Systems, methods and apparatus for coupling solar cells
EP3937259A1 (de) * 2020-07-10 2022-01-12 AZUR SPACE Solar Power GmbH Monolithische metamorphe mehrfachsolarzelle
US11431236B2 (en) 2020-08-18 2022-08-30 Meta Platforms Technologies, Llc Dynamically addressable high voltage optical transformer with integrated optically triggered switches
EP3965168B1 (de) * 2020-09-07 2023-03-08 AZUR SPACE Solar Power GmbH Stapelförmige monolithische mehrfachsolarzelle
US11362230B1 (en) 2021-01-28 2022-06-14 Solaero Technologies Corp. Multijunction solar cells

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017332A (en) 1975-02-27 1977-04-12 Varian Associates Solar cells employing stacked opposite conductivity layers
US4127862A (en) * 1977-09-06 1978-11-28 Bell Telephone Laboratories, Incorporated Integrated optical detectors
US4332974A (en) 1979-06-28 1982-06-01 Chevron Research Company Multilayer photovoltaic cell
US4255211A (en) 1979-12-31 1981-03-10 Chevron Research Company Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
US4631352A (en) * 1985-12-17 1986-12-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells
JPS62234379A (ja) * 1986-04-04 1987-10-14 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPH0795602B2 (ja) 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5322573A (en) 1992-10-02 1994-06-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration InP solar cell with window layer
US5407491A (en) 1993-04-08 1995-04-18 University Of Houston Tandem solar cell with improved tunnel junction
US5800630A (en) 1993-04-08 1998-09-01 University Of Houston Tandem solar cell with indium phosphide tunnel junction
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
US5853497A (en) * 1996-12-12 1998-12-29 Hughes Electronics Corporation High efficiency multi-junction solar cells

Also Published As

Publication number Publication date
EP1134813B1 (de) 2011-06-08
CA2340997A1 (en) 2001-09-15
CA2340997C (en) 2004-02-17
EP1134813A3 (de) 2006-05-17
EP1134813A2 (de) 2001-09-19
US6316715B1 (en) 2001-11-13

Similar Documents

Publication Publication Date Title
ATE512466T1 (de) Photovoltaische zelle mit mehreren übergängen mit dünner erster (oberer) unterzelle und dickerer zweiter unterzelle aus dem gleichen oder ähnlichem halbleitermaterial
ATE206247T1 (de) Herstellungsverfahren für eine photovolaische tandem-vorrichtung mit verbessertem wirkungsgrad und so hergestellte vorrichtung
AU647075B2 (en) Photovoltaic cells for converting light energy to electric energy and photoelectric battery
DE69215176D1 (de) Solarzelle und deren Herstellungsmethode
Potter et al. Device analysis of CuInSe2/(Cd, Zn) S/ZnO solar cells
JPS57181176A (en) High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
Gale et al. A new high-efficiency GaAs solar cell structure using a heterostructure back-surface field
Dhingra et al. Computer simulation and modeling of the graded bandgap CuInSe/sub 2CdS solar cell
Aberle et al. Two-dimensional minority carrier flow in high-efficiency silicon solar cells at short-circuit, open-circuit and maximum power point operating conditions
Gupta et al. Effects of shading and defects in solar cell arrays-A simple approach
Schultz et al. High efficiency 1.0 eV GaInAs bottom solar cell for 3-junction monolithic stack
Isah et al. A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell
Schwartz et al. The use of CuIn/sub 1-x/Ga/sub x/Se/sub 2/layers to improve the performance of CuInSe/sub 2/cells
Wagner et al. Superstructures and multijunction cells for high efficiency energy conversion
Arndt et al. Advances in high output voltage silicon solar cells
Cheng et al. Mechanisms of photon-induced changes in silicon solar cell parameters
Lewis et al. A two-terminal, two-junction monolithic cascade solar cell in a lattice-mismatched system
Borrego et al. A high efficiency bulk graded band gap/PN junction solar cell structure at high concentration ratios
Fabre et al. Photocurrent analysis in MIS silicon solar cells
Singh et al. Electronic characteristics of thin-film CdS-CdTe photovoltaic cells
Akiyama Extended detailed-balance analysis and light management in high-efficiency solar cells
Hall et al. 10% conversion efficiency in thin film polycrystalline cadmium-zinc sulfide/copper sulfide solar cells
Jang et al. Computer simulation for the effects of inserting the textured ZnO and buffer layer in the rear side of ZnO/nip-SiC: H/metal type amorphous silicon solar cells
Bube Heterojunctions for thin film solar cells
Baniyounis et al. Analysis of power conversion limitation factors of Cu (In

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties