ATE495545T1 - Herstellungsverfahren eines nanokristall-flash- speicherbauelementes - Google Patents

Herstellungsverfahren eines nanokristall-flash- speicherbauelementes

Info

Publication number
ATE495545T1
ATE495545T1 AT02256661T AT02256661T ATE495545T1 AT E495545 T1 ATE495545 T1 AT E495545T1 AT 02256661 T AT02256661 T AT 02256661T AT 02256661 T AT02256661 T AT 02256661T AT E495545 T1 ATE495545 T1 AT E495545T1
Authority
AT
Austria
Prior art keywords
flash memory
production process
memory component
nanocrystals
sio
Prior art date
Application number
AT02256661T
Other languages
English (en)
Inventor
Wee Kiong Choi
Wai Kin Chim
Vivian Ng
Lap Chan
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Application granted granted Critical
Publication of ATE495545T1 publication Critical patent/ATE495545T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
AT02256661T 2001-10-19 2002-09-25 Herstellungsverfahren eines nanokristall-flash- speicherbauelementes ATE495545T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34807201P 2001-10-19 2001-10-19
US10/087,506 US6656792B2 (en) 2001-10-19 2002-03-01 Nanocrystal flash memory device and manufacturing method therefor

Publications (1)

Publication Number Publication Date
ATE495545T1 true ATE495545T1 (de) 2011-01-15

Family

ID=26777049

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02256661T ATE495545T1 (de) 2001-10-19 2002-09-25 Herstellungsverfahren eines nanokristall-flash- speicherbauelementes

Country Status (6)

Country Link
US (1) US6656792B2 (de)
EP (1) EP1304730B1 (de)
JP (1) JP4334196B2 (de)
AT (1) ATE495545T1 (de)
DE (1) DE60238893D1 (de)
SG (1) SG106099A1 (de)

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Also Published As

Publication number Publication date
JP2003152120A (ja) 2003-05-23
SG106099A1 (en) 2004-09-30
JP4334196B2 (ja) 2009-09-30
EP1304730B1 (de) 2011-01-12
US6656792B2 (en) 2003-12-02
DE60238893D1 (de) 2011-02-24
EP1304730A3 (de) 2007-10-10
EP1304730A2 (de) 2003-04-23
US20030077863A1 (en) 2003-04-24

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