ATE493669T1 - Halbleiterbauelement mit teststruktur und testverfahren für ein halbleiterbauelement - Google Patents

Halbleiterbauelement mit teststruktur und testverfahren für ein halbleiterbauelement

Info

Publication number
ATE493669T1
ATE493669T1 AT07766752T AT07766752T ATE493669T1 AT E493669 T1 ATE493669 T1 AT E493669T1 AT 07766752 T AT07766752 T AT 07766752T AT 07766752 T AT07766752 T AT 07766752T AT E493669 T1 ATE493669 T1 AT E493669T1
Authority
AT
Austria
Prior art keywords
ring oscillator
supply rail
semiconductor component
variations
test
Prior art date
Application number
AT07766752T
Other languages
English (en)
Inventor
Marcel Pelgrom
Violeta Petrescu
Praveen Theendakara
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE493669T1 publication Critical patent/ATE493669T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G01R31/3161—Marginal testing

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Sampling And Sample Adjustment (AREA)
AT07766752T 2006-06-20 2007-06-14 Halbleiterbauelement mit teststruktur und testverfahren für ein halbleiterbauelement ATE493669T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06115740 2006-06-20
PCT/IB2007/052268 WO2007148268A2 (en) 2006-06-20 2007-06-14 Semiconductor device with test structure and semiconductor device test method

Publications (1)

Publication Number Publication Date
ATE493669T1 true ATE493669T1 (de) 2011-01-15

Family

ID=38694876

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07766752T ATE493669T1 (de) 2006-06-20 2007-06-14 Halbleiterbauelement mit teststruktur und testverfahren für ein halbleiterbauelement

Country Status (6)

Country Link
US (1) US20100315114A1 (de)
EP (1) EP2038668B1 (de)
CN (1) CN101473237A (de)
AT (1) ATE493669T1 (de)
DE (1) DE602007011612D1 (de)
WO (1) WO2007148268A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120081141A1 (en) * 2010-09-30 2012-04-05 International Business Machines Corporation On-Chip Delay Measurement Through a Transistor Array
CN102655410B (zh) * 2011-03-02 2014-10-29 复旦大学 压控振荡器、用于检测工艺波动的测试系统及其测试方法
CN103337259B (zh) * 2013-07-25 2016-01-06 上海华力微电子有限公司 Sram失配晶体管检测方法
CN105093086B (zh) * 2014-04-24 2018-05-11 中芯国际集成电路制造(上海)有限公司 一种电迁移的检测结构及检测方法
CN105097781B (zh) * 2014-05-14 2018-11-16 中芯国际集成电路制造(上海)有限公司 一种焊盘下装置的检测结构及检测方法
CN105353288B (zh) * 2014-08-19 2018-07-27 龙芯中科技术有限公司 晶体管工艺波动检测系统和检测方法
US9692396B2 (en) * 2015-05-13 2017-06-27 Qualcomm Incorporated Ring oscillator architecture with controlled sensitivity to supply voltage
JP2017123422A (ja) * 2016-01-08 2017-07-13 ソニー株式会社 半導体装置、測定装置および測定方法、並びに半導体システム
CN108155891B (zh) * 2017-12-22 2021-08-31 中国电子科技集团公司第五十四研究所 一种时钟产生电路
CN108735136B (zh) * 2018-06-13 2021-09-21 京东方科技集团股份有限公司 一种显示基板、测试电路和测试方法
US11099224B2 (en) * 2019-05-24 2021-08-24 Marvell Israel (M.I.S.L) Ltd. Method and circuitry for semiconductor device performance characterization

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324712A (ja) * 1986-07-17 1988-02-02 Toshiba Corp Ｍｏｓ型半導体回路
US6272666B1 (en) * 1998-12-30 2001-08-07 Intel Corporation Transistor group mismatch detection and reduction
KR100284293B1 (ko) * 1999-02-12 2001-03-02 김영환 핫 캐리어 측정회로
JP2004096237A (ja) * 2002-08-29 2004-03-25 Nec Electronics Corp 発振回路及び半導体集積回路
US7109809B1 (en) * 2003-09-11 2006-09-19 Xilinx, Inc. Method and circuit for reducing VCO noise
US7205854B2 (en) * 2003-12-23 2007-04-17 Intel Corporation On-chip transistor degradation monitoring
US7208934B2 (en) * 2004-01-21 2007-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for identification of locations of a circuit within an integrated circuit having low speed performance
US7532078B2 (en) * 2007-02-09 2009-05-12 International Business Machines Corporation Scannable virtual rail method and ring oscillator circuit for measuring variations in device characteristics

Also Published As

Publication number Publication date
WO2007148268A3 (en) 2008-04-24
WO2007148268A2 (en) 2007-12-27
US20100315114A1 (en) 2010-12-16
EP2038668B1 (de) 2010-12-29
DE602007011612D1 (de) 2011-02-10
EP2038668A2 (de) 2009-03-25
CN101473237A (zh) 2009-07-01

Similar Documents

Publication Publication Date Title
ATE493669T1 (de) Halbleiterbauelement mit teststruktur und testverfahren für ein halbleiterbauelement
TW200717682A (en) Method for inspecting microelectronic components on a substrate and apparatus for testing same
TW200706892A (en) Testing circuits, wafer, measurement apparatus, device fabricating method and display apparatus
DE602007006031D1 (de) Prüfbare integrierte schaltung und ic-prüfverfahren
EP1582882A3 (de) Verfahren zur Messung des Tastverhältnisses
TW200736630A (en) Methods and apparatuses for dynamic probe adjustment
TWI266042B (en) Method to determine the value of process parameters based on scatterometry data
CO6331389A2 (es) Sistema de auto monitoreo individualizado para transformadores en instalaciones de medida de poder y metodo de automonitoreo y diagnosis de transformadores en instalaciones de medida de poder
ATE525661T1 (de) Halbleiterbauelement und verfahren zum testen eines solchen
TW200625587A (en) Semiconductor structure comprising a stress sensitive element and method of measuring a stress in a semiconductor structure
ATE505734T1 (de) Chipprüfvorrichtung und verfahren zum bereitstellen von timinginformationen
SG126130A1 (en) Probing card and inspection apparatus for microstructure
DE502008001399D1 (de) Verfahren zur bestimmung einer asymmetrischen signalverzögerung eines signalpfades innerhalb einer integrierten schaltung
JP5015341B1 (ja) 太陽電池の欠陥検査装置及び検査方法
JP2002359270A (ja) 半導体装置
GB2466777B (en) Apparatus and method for testing a transducer and/or electronic circuitry associated with a transducer
WO2008146451A1 (ja) 半導体試験装置および試験方法
DE602004022878D1 (de) Auswertung eines ausgangssignals eines gerade geprüften bausteins
ATE452328T1 (de) Amr-sensorelement für winkelmessungen
DE602006008766D1 (de) Testpräparierte integrierte schaltung mit interner stromversorgungsdomäne
WO2008096211A3 (en) Measurement of critical dimensions of semiconductor wafers
ATE504845T1 (de) Verfahren zur erkennung von bauteilefehlern einer analogen signalverarbeitungsschaltung für einen messumformer
TWI520244B (zh) 測試鍵的電路架構與測試鍵的測試方法
TW200718958A (en) IC tester
FR3076349B1 (fr) Circuit d'autotest et procede de verification de l'integrite d'un signal le long d'un chemin de signal

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties