ATE482467T1 - Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung - Google Patents

Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Info

Publication number
ATE482467T1
ATE482467T1 AT07832605T AT07832605T ATE482467T1 AT E482467 T1 ATE482467 T1 AT E482467T1 AT 07832605 T AT07832605 T AT 07832605T AT 07832605 T AT07832605 T AT 07832605T AT E482467 T1 ATE482467 T1 AT E482467T1
Authority
AT
Austria
Prior art keywords
etching
amorphic
alkaline
etching solution
semiconductor oxides
Prior art date
Application number
AT07832605T
Other languages
English (en)
Inventor
Chienliu Chang
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE482467T1 publication Critical patent/ATE482467T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments

Landscapes

  • Thin Film Transistor (AREA)
  • Weting (AREA)
AT07832605T 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung ATE482467T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006328204A JP4785721B2 (ja) 2006-12-05 2006-12-05 エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液
PCT/JP2007/072880 WO2008069057A2 (en) 2006-12-05 2007-11-20 Etching amorphous semiconductor oxides with alkaline etchant solution

Publications (1)

Publication Number Publication Date
ATE482467T1 true ATE482467T1 (de) 2010-10-15

Family

ID=39492734

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07832605T ATE482467T1 (de) 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Country Status (8)

Country Link
US (1) US7960289B2 (de)
EP (1) EP2100326B1 (de)
JP (1) JP4785721B2 (de)
KR (1) KR101102315B1 (de)
CN (1) CN101548367B (de)
AT (1) ATE482467T1 (de)
DE (1) DE602007009424D1 (de)
WO (1) WO2008069057A2 (de)

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JP5149464B2 (ja) * 2010-06-02 2013-02-20 シャープ株式会社 コンタクト構造、基板、表示装置、並びに前記コンタクト構造及び前記基板の製造方法
KR101193196B1 (ko) * 2010-07-07 2012-10-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
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Also Published As

Publication number Publication date
US7960289B2 (en) 2011-06-14
KR20090085699A (ko) 2009-08-07
WO2008069057A3 (en) 2008-12-04
DE602007009424D1 (de) 2010-11-04
KR101102315B1 (ko) 2012-01-03
JP2008141113A (ja) 2008-06-19
US20100035378A1 (en) 2010-02-11
JP4785721B2 (ja) 2011-10-05
CN101548367B (zh) 2012-05-16
EP2100326A2 (de) 2009-09-16
WO2008069057A2 (en) 2008-06-12
EP2100326B1 (de) 2010-09-22
CN101548367A (zh) 2009-09-30

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