ATE482467T1 - Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung - Google Patents

Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Info

Publication number
ATE482467T1
ATE482467T1 AT07832605T AT07832605T ATE482467T1 AT E482467 T1 ATE482467 T1 AT E482467T1 AT 07832605 T AT07832605 T AT 07832605T AT 07832605 T AT07832605 T AT 07832605T AT E482467 T1 ATE482467 T1 AT E482467T1
Authority
AT
Austria
Prior art keywords
etching
amorphic
alkaline
etching solution
semiconductor oxides
Prior art date
Application number
AT07832605T
Other languages
English (en)
Inventor
Chienliu Chang
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE482467T1 publication Critical patent/ATE482467T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments

Landscapes

  • Thin Film Transistor (AREA)
  • Weting (AREA)
AT07832605T 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung ATE482467T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006328204A JP4785721B2 (ja) 2006-12-05 2006-12-05 エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液
PCT/JP2007/072880 WO2008069057A2 (en) 2006-12-05 2007-11-20 Etching amorphous semiconductor oxides with alkaline etchant solution

Publications (1)

Publication Number Publication Date
ATE482467T1 true ATE482467T1 (de) 2010-10-15

Family

ID=39492734

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07832605T ATE482467T1 (de) 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Country Status (8)

Country Link
US (1) US7960289B2 (de)
EP (1) EP2100326B1 (de)
JP (1) JP4785721B2 (de)
KR (1) KR101102315B1 (de)
CN (1) CN101548367B (de)
AT (1) ATE482467T1 (de)
DE (1) DE602007009424D1 (de)
WO (1) WO2008069057A2 (de)

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TWI502739B (zh) 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
JP2010129556A (ja) * 2008-11-25 2010-06-10 Dainippon Printing Co Ltd トランジスタ素子およびその製造方法
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WO2011105343A1 (ja) * 2010-02-26 2011-09-01 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置
WO2011114595A1 (ja) * 2010-03-16 2011-09-22 シャープ株式会社 表示パネル用基板、その製造方法、表示パネル及び表示装置
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WO2011151970A1 (ja) * 2010-06-02 2011-12-08 シャープ株式会社 薄膜トランジスタ、コンタクト構造、基板、表示装置及びこれらの製造方法
KR101193196B1 (ko) * 2010-07-07 2012-10-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
WO2012008192A1 (ja) * 2010-07-15 2012-01-19 シャープ株式会社 回路基板、表示装置、及び、回路基板の製造方法
JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5957835B2 (ja) * 2011-09-28 2016-07-27 株式会社Sumco 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法
CN103811417B (zh) * 2012-11-08 2016-07-27 瀚宇彩晶股份有限公司 像素结构的制作方法
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CN103337462B (zh) * 2013-06-13 2017-03-22 北京大学深圳研究生院 一种薄膜晶体管的制备方法
TWI536464B (zh) 2014-01-15 2016-06-01 友達光電股份有限公司 電晶體及其製造方法
WO2015112419A1 (en) 2014-01-23 2015-07-30 3M Innovative Properties Company Method for patterning a microstructure
US20170060282A1 (en) * 2014-03-25 2017-03-02 3M Innovative Properties Company Method of selectively etching a metal layer from a microstructure
US10168805B2 (en) 2014-08-18 2019-01-01 3M Innovative Properties Company Conductive layered structure and methods of making same
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JP7097952B2 (ja) * 2017-08-29 2022-07-08 マイクロン テクノロジー，インク． 高バンド・ギャップ材料を含むストリング・ドライバを備えたデバイス及びシステム、並びに形成の方法
CN110044803A (zh) * 2019-04-23 2019-07-23 蚌埠中光电科技有限公司 一种测量玻璃耐hf蚀刻性能的方法
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Also Published As

Publication number Publication date
WO2008069057A2 (en) 2008-06-12
DE602007009424D1 (de) 2010-11-04
EP2100326A2 (de) 2009-09-16
KR101102315B1 (ko) 2012-01-03
JP2008141113A (ja) 2008-06-19
CN101548367A (zh) 2009-09-30
WO2008069057A3 (en) 2008-12-04
CN101548367B (zh) 2012-05-16
KR20090085699A (ko) 2009-08-07
JP4785721B2 (ja) 2011-10-05
EP2100326B1 (de) 2010-09-22
US20100035378A1 (en) 2010-02-11
US7960289B2 (en) 2011-06-14

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