ATE482467T1 - Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung - Google Patents

Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Info

Publication number
ATE482467T1
ATE482467T1 AT07832605T AT07832605T ATE482467T1 AT E482467 T1 ATE482467 T1 AT E482467T1 AT 07832605 T AT07832605 T AT 07832605T AT 07832605 T AT07832605 T AT 07832605T AT E482467 T1 ATE482467 T1 AT E482467T1
Authority
AT
Austria
Prior art keywords
etching
amorphic
alkaline
etching solution
semiconductor oxides
Prior art date
Application number
AT07832605T
Other languages
English (en)
Inventor
Chienliu Chang
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE482467T1 publication Critical patent/ATE482467T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Weting (AREA)
AT07832605T 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung ATE482467T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006328204A JP4785721B2 (ja) 2006-12-05 2006-12-05 エッチング方法、パターン形成方法、薄膜トランジスタの製造方法及びエッチング液
PCT/JP2007/072880 WO2008069057A2 (en) 2006-12-05 2007-11-20 Etching amorphous semiconductor oxides with alkaline etchant solution

Publications (1)

Publication Number Publication Date
ATE482467T1 true ATE482467T1 (de) 2010-10-15

Family

ID=39492734

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07832605T ATE482467T1 (de) 2006-12-05 2007-11-20 Ätzen von amorphen halbleiteroxiden mit einer alkaliätzlösung

Country Status (8)

Country Link
US (1) US7960289B2 (de)
EP (1) EP2100326B1 (de)
JP (1) JP4785721B2 (de)
KR (1) KR101102315B1 (de)
CN (1) CN101548367B (de)
AT (1) ATE482467T1 (de)
DE (1) DE602007009424D1 (de)
WO (1) WO2008069057A2 (de)

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KR20110084523A (ko) * 2008-11-07 2011-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI502739B (zh) * 2008-11-13 2015-10-01 Semiconductor Energy Lab 半導體裝置及其製造方法
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WO2011043218A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
EP2507822B1 (de) 2009-12-04 2016-08-31 Semiconductor Energy Laboratory Co. Ltd. Herstellungsverfahren für halbleiterbauelement
EP2507823B1 (de) 2009-12-04 2018-09-26 Semiconductor Energy Laboratory Co. Ltd. Herstellungsverfahren für halbleiterbauelement
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CN102884632B (zh) * 2010-06-02 2013-12-04 夏普株式会社 接触结构、基板、显示装置及接触结构和基板的制造方法
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JP5931573B2 (ja) * 2011-05-13 2016-06-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5957835B2 (ja) * 2011-09-28 2016-07-27 株式会社Sumco 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法、および太陽電池モジュールの製造方法
CN103811417B (zh) * 2012-11-08 2016-07-27 瀚宇彩晶股份有限公司 像素结构的制作方法
KR101757400B1 (ko) * 2013-03-12 2017-07-12 어플라이드 머티어리얼스, 인코포레이티드 금속 옥사이드 반도체 ｔｆｔ용 유전체 막들의 핀홀 평가 방법
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US20170060282A1 (en) * 2014-03-25 2017-03-02 3M Innovative Properties Company Method of selectively etching a metal layer from a microstructure
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Also Published As

Publication number Publication date
US20100035378A1 (en) 2010-02-11
KR20090085699A (ko) 2009-08-07
US7960289B2 (en) 2011-06-14
EP2100326B1 (de) 2010-09-22
JP4785721B2 (ja) 2011-10-05
JP2008141113A (ja) 2008-06-19
CN101548367B (zh) 2012-05-16
WO2008069057A3 (en) 2008-12-04
KR101102315B1 (ko) 2012-01-03
WO2008069057A2 (en) 2008-06-12
CN101548367A (zh) 2009-09-30
EP2100326A2 (de) 2009-09-16
DE602007009424D1 (de) 2010-11-04

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