ATE482387T1 - Verfahren und system zur überwachung der eigenschaften von musterstrukturen - Google Patents
Verfahren und system zur überwachung der eigenschaften von musterstrukturenInfo
- Publication number
- ATE482387T1 ATE482387T1 AT08763704T AT08763704T ATE482387T1 AT E482387 T1 ATE482387 T1 AT E482387T1 AT 08763704 T AT08763704 T AT 08763704T AT 08763704 T AT08763704 T AT 08763704T AT E482387 T1 ATE482387 T1 AT E482387T1
- Authority
- AT
- Austria
- Prior art keywords
- properties
- optical
- stacks
- geometrical
- sites
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94903407P | 2007-07-11 | 2007-07-11 | |
PCT/IL2008/000966 WO2009007981A1 (en) | 2007-07-11 | 2008-07-13 | Method and system for use in monitoring properties of patterned structures |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE482387T1 true ATE482387T1 (de) | 2010-10-15 |
Family
ID=39790061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08763704T ATE482387T1 (de) | 2007-07-11 | 2008-07-13 | Verfahren und system zur überwachung der eigenschaften von musterstrukturen |
Country Status (8)
Country | Link |
---|---|
US (3) | US8289515B2 (de) |
EP (1) | EP2165178B1 (de) |
JP (1) | JP5462158B2 (de) |
KR (1) | KR101602965B1 (de) |
AT (1) | ATE482387T1 (de) |
DE (1) | DE602008002764D1 (de) |
TW (1) | TWI416096B (de) |
WO (1) | WO2009007981A1 (de) |
Families Citing this family (33)
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KR100817092B1 (ko) * | 2007-03-14 | 2008-03-26 | 삼성전자주식회사 | 중첩계측오차를 보정하기 위한 계측시스템 및 이를 이용한계측방법 |
JP2010113586A (ja) * | 2008-11-07 | 2010-05-20 | Nec Electronics Corp | レイアウト密度検証システム、レイアウト密度検証方法、及びレイアウト密度検証用プログラム |
NL2004887A (en) * | 2009-06-24 | 2010-12-27 | Asml Netherlands Bv | Method for selecting sample positions on a substrate, method for providing a representation of a model of properties of a substrate, method of providing a representation of the variation of properties of a substrate across the substrate and device manufacturing method. |
US8805630B2 (en) * | 2009-08-25 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for modeling in semiconductor fabrication |
WO2011104613A1 (en) * | 2010-02-23 | 2011-09-01 | Carl Zeiss Sms Ltd. | Critical dimension uniformity correction by scanner signature control |
KR102073424B1 (ko) * | 2010-02-25 | 2020-02-04 | 노바 메주어링 인스트루먼츠 엘티디. | 패턴처리된 구조물의 측정 방법 및 시스템 |
KR101930913B1 (ko) * | 2010-06-17 | 2018-12-19 | 노바 메주어링 인스트루먼츠 엘티디. | 패턴 구조들의 광학적 정밀 검사를 최적화하는 방법 및 시스템 |
WO2012104680A1 (en) * | 2011-01-31 | 2012-08-09 | Indian Institute Of Science | Apparatus and methods for sensing or imaging using stacked thin films |
US8452439B2 (en) * | 2011-03-15 | 2013-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device performance parmeter tuning method and system |
US8942842B2 (en) * | 2011-04-28 | 2015-01-27 | Applied Materials, Inc. | Varying optical coefficients to generate spectra for polishing control |
US10295329B2 (en) * | 2011-08-01 | 2019-05-21 | Nova Measuring Instruments Ltd. | Monitoring system and method for verifying measurements in patterned structures |
US8675188B2 (en) * | 2012-01-09 | 2014-03-18 | Kla-Tencor Corporation | Method and system for determining one or more optical characteristics of structure of a semiconductor wafer |
US10013518B2 (en) * | 2012-07-10 | 2018-07-03 | Kla-Tencor Corporation | Model building and analysis engine for combined X-ray and optical metrology |
US9430593B2 (en) | 2012-10-11 | 2016-08-30 | Kla-Tencor Corporation | System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking |
US10054423B2 (en) | 2012-12-27 | 2018-08-21 | Nova Measuring Instruments Ltd. | Optical method and system for critical dimensions and thickness characterization |
US9490182B2 (en) | 2013-12-23 | 2016-11-08 | Kla-Tencor Corporation | Measurement of multiple patterning parameters |
US9146193B2 (en) | 2014-01-03 | 2015-09-29 | Micron Technology, Inc. | Scatterometry metrology methods and methods of modeling formation of a vertical region of a multilayer semiconductor substrate to comprise a scatterometry target |
US9544368B2 (en) * | 2014-02-19 | 2017-01-10 | International Business Machines Corporation | Efficient configuration combination selection in migration |
US10876922B2 (en) * | 2014-06-11 | 2020-12-29 | The Boeing Company | Methods and systems for determining optical properties for light transmitted mediums |
US10018994B2 (en) * | 2014-06-19 | 2018-07-10 | Halliburton Energy Services, Inc. | Method for designing a high sensitivity integrated computational element |
US10302414B2 (en) | 2014-09-14 | 2019-05-28 | Nova Measuring Instruments Ltd. | Scatterometry method and system |
MX2017011984A (es) * | 2015-04-15 | 2018-01-30 | Halliburton Energy Services Inc | Herramienta de analisis de muestras que emplea un filtro selectivo de angulo de banda ancha. |
DE102015207002B4 (de) * | 2015-04-17 | 2016-10-27 | Carl Zeiss Smt Gmbh | Verfahren zur Charakterisierung einer diffraktiven optischen Struktur |
NL2017789A (en) * | 2015-12-04 | 2017-06-13 | Asml Netherlands Bv | Statistical hierarchical reconstruction from metrology data |
US11164768B2 (en) * | 2018-04-27 | 2021-11-02 | Kla Corporation | Process-induced displacement characterization during semiconductor production |
US11056405B2 (en) * | 2018-09-14 | 2021-07-06 | Lam Research Corporation | Methods and systems for controlling wafer fabrication process |
US11101153B2 (en) | 2019-03-21 | 2021-08-24 | Kla Corporation | Parameter-stable misregistration measurement amelioration in semiconductor devices |
CN109933946B (zh) * | 2019-03-29 | 2023-08-18 | 上海华力集成电路制造有限公司 | 一种半导体器件的分析方法 |
CN109948283B (zh) * | 2019-03-29 | 2023-08-18 | 上海华力集成电路制造有限公司 | 一种半导体器件的分析方法 |
US11300948B2 (en) * | 2019-06-27 | 2022-04-12 | Nova Ltd | Process control of semiconductor fabrication based on spectra quality metrics |
CN111578848B (zh) * | 2020-04-24 | 2022-03-08 | 中国电子科技集团公司第十三研究所 | 线宽标准样片的线宽量值确定的方法及系统 |
DE102021204532A1 (de) | 2021-05-05 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren und Messanordnung zur Bestimmung der Brechzahl einer Schicht |
TW202344807A (zh) * | 2021-12-29 | 2023-11-16 | 美商科磊股份有限公司 | 用於正則化應用特定半導體測量系統參數設定之最佳化之方法及系統 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
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US5835226A (en) * | 1997-11-13 | 1998-11-10 | Lsi Logic Corporation | Method for determining optical constants prior to film processing to be used improve accuracy of post-processing thickness measurements |
JPH11160028A (ja) | 1997-11-27 | 1999-06-18 | Dainippon Screen Mfg Co Ltd | 膜厚測定装置および膜厚測定方法 |
US5900633A (en) * | 1997-12-15 | 1999-05-04 | On-Line Technologies, Inc | Spectrometric method for analysis of film thickness and composition on a patterned sample |
US6483580B1 (en) | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
US5999267A (en) * | 1999-03-08 | 1999-12-07 | Zawaideh; Emad | Nondestructive optical techniques for simultaneously measuring optical constants and thicknesses of single and multilayer films |
US6392756B1 (en) * | 1999-06-18 | 2002-05-21 | N&K Technology, Inc. | Method and apparatus for optically determining physical parameters of thin films deposited on a complex substrate |
IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
US6091485A (en) * | 1999-12-15 | 2000-07-18 | N & K Technology, Inc. | Method and apparatus for optically determining physical parameters of underlayers |
US7095511B2 (en) | 2000-07-06 | 2006-08-22 | Filmetrics, Inc. | Method and apparatus for high-speed thickness mapping of patterned thin films |
US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
IL138552A (en) * | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Measurement of transverse displacement by optical method |
JP3908472B2 (ja) * | 2001-03-13 | 2007-04-25 | 株式会社東芝 | 膜厚測定方法及び段差測定方法 |
US6618149B1 (en) | 2001-04-06 | 2003-09-09 | Advanced Micro Devices, Inc. | Method of identifying film stacks based upon optical properties |
EP1435517B1 (de) * | 2001-09-06 | 2011-06-15 | Horiba, Ltd. | Verfahren zur dünnfilmschichtstrukturanalyse mit einem spektroskopischen ellipsometer |
US6934031B2 (en) * | 2001-09-27 | 2005-08-23 | Rudolph Technologies, Inc. | Methods and apparatus for determining optical constants of semiconductors and dielectrics with interband states |
IL145699A (en) * | 2001-09-30 | 2006-12-10 | Nova Measuring Instr Ltd | Method of thin film characterization |
AU2002360738A1 (en) * | 2001-12-19 | 2003-07-09 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
US6609086B1 (en) * | 2002-02-12 | 2003-08-19 | Timbre Technologies, Inc. | Profile refinement for integrated circuit metrology |
US6742168B1 (en) | 2002-03-19 | 2004-05-25 | Advanced Micro Devices, Inc. | Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device |
IL150438A0 (en) * | 2002-06-26 | 2002-12-01 | Nova Measuring Instr Ltd | Method of thin films measurement |
US7170604B2 (en) * | 2002-07-03 | 2007-01-30 | Tokyo Electron Limited | Overlay metrology method and apparatus using more than one grating per measurement direction |
JP2004191266A (ja) | 2002-12-13 | 2004-07-08 | Hitachi Ltd | 膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置 |
US7049156B2 (en) * | 2003-03-19 | 2006-05-23 | Verity Instruments, Inc. | System and method for in-situ monitor and control of film thickness and trench depth |
JP4136740B2 (ja) * | 2003-03-19 | 2008-08-20 | 株式会社堀場製作所 | 分光エリプソメータを用いた薄膜3層構造の解析方法 |
US7085676B2 (en) * | 2003-06-27 | 2006-08-01 | Tokyo Electron Limited | Feed forward critical dimension control |
JP3811150B2 (ja) | 2003-09-05 | 2006-08-16 | 株式会社東芝 | 膜厚測定方法、膜厚測定システム、半導体装置の製造方法及び膜厚測定システム制御プログラム |
DE10345551A1 (de) | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Verfahren zum Charakterisieren einer Schicht |
US7018855B2 (en) * | 2003-12-24 | 2006-03-28 | Lam Research Corporation | Process controls for improved wafer uniformity using integrated or standalone metrology |
US7259850B2 (en) * | 2004-01-14 | 2007-08-21 | Taiwan Semiconductor Manufacturing Company | Approach to improve ellipsometer modeling accuracy for solving material optical constants N & K |
US7202958B1 (en) * | 2004-06-01 | 2007-04-10 | Nanometrics Incorporated | Modeling a sample with an underlying complicated structure |
US7321426B1 (en) | 2004-06-02 | 2008-01-22 | Kla-Tencor Technologies Corporation | Optical metrology on patterned samples |
US7478019B2 (en) * | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
US7747424B2 (en) | 2006-03-17 | 2010-06-29 | Kla-Tencor Corporation | Scatterometry multi-structure shape definition with multi-periodicity |
US7515283B2 (en) | 2006-07-11 | 2009-04-07 | Tokyo Electron, Ltd. | Parallel profile determination in optical metrology |
US7522295B2 (en) | 2006-11-07 | 2009-04-21 | Tokyo Electron Limited | Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer |
US7417750B2 (en) | 2006-11-07 | 2008-08-26 | Tokyo Electron Limited | Consecutive measurement of structures formed on a semiconductor wafer using an angle-resolved spectroscopic scatterometer |
US7327475B1 (en) | 2006-12-15 | 2008-02-05 | Tokyo Electron Limited | Measuring a process parameter of a semiconductor fabrication process using optical metrology |
-
2008
- 2008-07-10 TW TW097126034A patent/TWI416096B/zh active
- 2008-07-13 JP JP2010515659A patent/JP5462158B2/ja active Active
- 2008-07-13 KR KR1020097025615A patent/KR101602965B1/ko active IP Right Grant
- 2008-07-13 EP EP08763704A patent/EP2165178B1/de active Active
- 2008-07-13 US US12/596,670 patent/US8289515B2/en active Active
- 2008-07-13 DE DE602008002764T patent/DE602008002764D1/de active Active
- 2008-07-13 WO PCT/IL2008/000966 patent/WO2009007981A1/en active Application Filing
- 2008-07-13 AT AT08763704T patent/ATE482387T1/de not_active IP Right Cessation
-
2012
- 2012-10-16 US US13/652,513 patent/US8643842B2/en active Active
-
2013
- 2013-12-24 US US14/139,913 patent/US8964178B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI416096B (zh) | 2013-11-21 |
EP2165178B1 (de) | 2010-09-22 |
US20130096876A1 (en) | 2013-04-18 |
DE602008002764D1 (de) | 2010-11-04 |
KR101602965B1 (ko) | 2016-03-11 |
US20140142869A1 (en) | 2014-05-22 |
EP2165178A1 (de) | 2010-03-24 |
JP2010533376A (ja) | 2010-10-21 |
KR20100045952A (ko) | 2010-05-04 |
US20100141948A1 (en) | 2010-06-10 |
US8289515B2 (en) | 2012-10-16 |
US8643842B2 (en) | 2014-02-04 |
US8964178B2 (en) | 2015-02-24 |
JP5462158B2 (ja) | 2014-04-02 |
WO2009007981A1 (en) | 2009-01-15 |
TW200912293A (en) | 2009-03-16 |
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Legal Events
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RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |