ATE480006T1 - Halbleiterbauelement und verfahren zu seiner herstellung - Google Patents

Halbleiterbauelement und verfahren zu seiner herstellung

Info

Publication number
ATE480006T1
ATE480006T1 AT07705804T AT07705804T ATE480006T1 AT E480006 T1 ATE480006 T1 AT E480006T1 AT 07705804 T AT07705804 T AT 07705804T AT 07705804 T AT07705804 T AT 07705804T AT E480006 T1 ATE480006 T1 AT E480006T1
Authority
AT
Austria
Prior art keywords
resistor
metallization structure
producing
semiconductor component
temperature
Prior art date
Application number
AT07705804T
Other languages
English (en)
Inventor
Joachim Stache
Rainer Hoffmann
Michael Burnus
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE480006T1 publication Critical patent/ATE480006T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13001—Core members of the bump connector
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    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/13111—Tin [Sn] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2924/01—Chemical elements
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode
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    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/14—Integrated circuits
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT07705804T 2006-02-10 2007-02-06 Halbleiterbauelement und verfahren zu seiner herstellung ATE480006T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06101561 2006-02-10
PCT/IB2007/050393 WO2007091214A1 (en) 2006-02-10 2007-02-06 Semiconductor device and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
ATE480006T1 true ATE480006T1 (de) 2010-09-15

Family

ID=38162249

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07705804T ATE480006T1 (de) 2006-02-10 2007-02-06 Halbleiterbauelement und verfahren zu seiner herstellung

Country Status (7)

Country Link
US (1) US8120146B2 (de)
EP (1) EP1984939B1 (de)
JP (1) JP2009533836A (de)
CN (1) CN101379591B (de)
AT (1) ATE480006T1 (de)
DE (1) DE602007008841D1 (de)
WO (1) WO2007091214A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20095557A0 (fi) 2009-05-19 2009-05-19 Imbera Electronics Oy Valmistusmenetelmä ja elektroniikkamoduuli, joka tarjoaa uusia mahdollisuuksia johdevedoille
US8786025B2 (en) * 2012-04-19 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method for forming same
JP2014229624A (ja) * 2013-05-17 2014-12-08 ソニー株式会社 半導体装置および電子機器
US9484209B1 (en) 2015-11-20 2016-11-01 International Business Machines Corporation Flexible and stretchable sensors formed by patterned spalling

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW454330B (en) * 1999-05-26 2001-09-11 Matsushita Electronics Corp Semiconductor apparatus and its manufacturing method
KR20030001973A (ko) * 2001-06-28 2003-01-08 주식회사 하이닉스반도체 정전기 보호소자를 구비한 반도체 장치의 제조방법
JP4204029B2 (ja) * 2001-11-30 2009-01-07 ローム株式会社 チップ抵抗器
US6953980B2 (en) * 2002-06-11 2005-10-11 Semiconductor Components Industries, Llc Semiconductor filter circuit and method
WO2004023498A1 (en) * 2002-09-03 2004-03-18 Vishay Intertechnology, Inc. Flip chip resistor and its manufacturing method
WO2005024914A1 (en) * 2003-09-10 2005-03-17 Philips Intellectual Property & Standards Gmbh Semiconductor arrangement with thin-film resistor
JP4541717B2 (ja) * 2004-02-09 2010-09-08 ルネサスエレクトロニクス株式会社 集積回路装置及びその製造方法
US7696603B2 (en) * 2006-01-26 2010-04-13 Texas Instruments Incorporated Back end thin film capacitor having both plates of thin film resistor material at single metallization layer

Also Published As

Publication number Publication date
EP1984939B1 (de) 2010-09-01
US20110062553A1 (en) 2011-03-17
CN101379591B (zh) 2010-12-22
CN101379591A (zh) 2009-03-04
DE602007008841D1 (de) 2010-10-14
WO2007091214A1 (en) 2007-08-16
US8120146B2 (en) 2012-02-21
EP1984939A1 (de) 2008-10-29
JP2009533836A (ja) 2009-09-17

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