ATE423226T1 - Suszeptorsystem - Google Patents
SuszeptorsystemInfo
- Publication number
- ATE423226T1 ATE423226T1 AT02808223T AT02808223T ATE423226T1 AT E423226 T1 ATE423226 T1 AT E423226T1 AT 02808223 T AT02808223 T AT 02808223T AT 02808223 T AT02808223 T AT 02808223T AT E423226 T1 ATE423226 T1 AT E423226T1
- Authority
- AT
- Austria
- Prior art keywords
- piece
- constituted
- hand side
- wall
- side wall
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 2
- 239000012777 electrically insulating material Substances 0.000 abstract 2
- 230000005674 electromagnetic induction Effects 0.000 abstract 2
- 239000011819 refractory material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/14—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
- F27B14/061—Induction furnaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2002/000774 WO2004053188A1 (en) | 2002-12-10 | 2002-12-10 | Susceptor system |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE423226T1 true ATE423226T1 (de) | 2009-03-15 |
Family
ID=32500473
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02808223T ATE423226T1 (de) | 2002-12-10 | 2002-12-10 | Suszeptorsystem |
AT03812670T ATE380263T1 (de) | 2002-12-10 | 2003-06-11 | Halterungssystem für eine behandlungsvorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03812670T ATE380263T1 (de) | 2002-12-10 | 2003-06-11 | Halterungssystem für eine behandlungsvorrichtung |
Country Status (9)
Country | Link |
---|---|
US (2) | US7615121B2 (de) |
EP (2) | EP1570108B1 (de) |
JP (2) | JP2006513559A (de) |
KR (1) | KR20050085503A (de) |
CN (2) | CN1708602A (de) |
AT (2) | ATE423226T1 (de) |
AU (2) | AU2002368439A1 (de) |
DE (2) | DE60231256D1 (de) |
WO (2) | WO2004053188A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE423226T1 (de) * | 2002-12-10 | 2009-03-15 | E T C Epitaxial Technology Ct | Suszeptorsystem |
AU2002368438A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system________________________ |
US8028531B2 (en) * | 2004-03-01 | 2011-10-04 | GlobalFoundries, Inc. | Mitigating heat in an integrated circuit |
CN100529198C (zh) * | 2004-06-09 | 2009-08-19 | Etc外延技术中心有限公司 | 用于处理装置的支承系统 |
EP1790757B1 (de) * | 2004-07-22 | 2013-08-14 | Toyo Tanso Co., Ltd. | Suszeptor |
ITMI20041677A1 (it) * | 2004-08-30 | 2004-11-30 | E T C Epitaxial Technology Ct | Processo di pulitura e processo operativo per un reattore cvd. |
KR100618868B1 (ko) * | 2004-10-19 | 2006-08-31 | 삼성전자주식회사 | 스핀 장치 |
DE102004062553A1 (de) * | 2004-12-24 | 2006-07-06 | Aixtron Ag | CVD-Reaktor mit RF-geheizter Prozesskammer |
ITMI20052498A1 (it) * | 2005-12-28 | 2007-06-29 | Lpe Spa | Camera di reazione a temperatura differenziata |
JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
KR100885180B1 (ko) * | 2006-12-27 | 2009-02-23 | 세메스 주식회사 | 기판 지지유닛, 그리고 상기 기판 지지유닛을 구비하는기판처리장치 및 방법 |
IL198123A0 (en) * | 2008-04-18 | 2009-12-24 | Snecma Propulsion Solide | A heat treatment oven with inductive heating |
KR20130107001A (ko) * | 2012-03-21 | 2013-10-01 | 엘지이노텍 주식회사 | 증착 장치 |
ITCO20130073A1 (it) | 2013-12-19 | 2015-06-20 | Lpe Spa | Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore |
CN106471614B (zh) | 2014-07-03 | 2020-08-25 | Lpe公司 | 用于操纵衬底的工具、操纵方法及外延反应器 |
KR102343103B1 (ko) * | 2015-07-10 | 2021-12-28 | 주식회사 테스 | 유기금속화학기상증착장치 |
JP6648627B2 (ja) | 2016-04-27 | 2020-02-14 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置 |
CN107435165A (zh) * | 2016-05-26 | 2017-12-05 | 北京北方华创微电子装备有限公司 | 一种外延反应腔和化学气相外延设备 |
WO2018028872A1 (en) * | 2016-08-09 | 2018-02-15 | Singulus Technologies Ag | System and method for gas phase deposition |
KR101885026B1 (ko) * | 2017-03-22 | 2018-08-02 | 오충석 | 웨이퍼 회전장치 |
DE102018131751A1 (de) * | 2018-12-11 | 2020-06-18 | Aixtron Se | Suszeptor eines CVD-Reaktors |
IT201800011158A1 (it) | 2018-12-17 | 2020-06-17 | Lpe Spa | Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore |
CN112648937B (zh) * | 2019-10-13 | 2023-01-06 | 中北大学 | 带有防转机构的孔检测装置与检测方法 |
IT201900022047A1 (it) * | 2019-11-25 | 2021-05-25 | Lpe Spa | Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale |
CN110760820A (zh) * | 2019-12-05 | 2020-02-07 | 深圳市志橙半导体材料有限公司 | 一种气相沉积炉内气体悬浮装置 |
CN112951739A (zh) * | 2019-12-10 | 2021-06-11 | 圆益Ips股份有限公司 | 基板支撑架及基板处理装置 |
IT202000021517A1 (it) | 2020-09-11 | 2022-03-11 | Lpe Spa | Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale |
KR20220067988A (ko) * | 2020-11-18 | 2022-05-25 | 주식회사 원익아이피에스 | 기판 지지 조립체 및 기판 처리 장치 |
CN114686973B (zh) * | 2022-03-18 | 2023-11-14 | 复旦大学 | 一种半导体薄膜生长感应加热式设备的反应腔结构 |
CN115537919B (zh) * | 2022-11-01 | 2024-01-19 | 江苏汉印机电科技股份有限公司 | 一种高温气悬浮旋转机构 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1458222A (en) | 1973-03-12 | 1976-12-08 | Electricity Council | Furnaces for the production of tubular or cyclindrical ceramic articles |
US3980854A (en) | 1974-11-15 | 1976-09-14 | Rca Corporation | Graphite susceptor structure for inductively heating semiconductor wafers |
JPH0669027B2 (ja) | 1983-02-21 | 1994-08-31 | 株式会社日立製作所 | 半導体ウエハの薄膜形成方法 |
US4794217A (en) | 1985-04-01 | 1988-12-27 | Qing Hua University | Induction system for rapid heat treatment of semiconductor wafers |
FR2596070A1 (fr) | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
FR2650841A1 (fr) | 1989-08-11 | 1991-02-15 | Thomson Tubes Electroniques | Dispositif de depot d'un materiau sur un support thermiquement conducteur |
US5155062A (en) | 1990-12-20 | 1992-10-13 | Cree Research, Inc. | Method for silicon carbide chemical vapor deposition using levitated wafer system |
US5106204A (en) | 1991-03-25 | 1992-04-21 | Dunham James L | High unit load gas bearing |
US5226383A (en) | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
US5221356A (en) | 1992-10-08 | 1993-06-22 | Northern Telecom Limited | Apparatus for manufacturing semiconductor wafers |
SE9500326D0 (sv) | 1995-01-31 | 1995-01-31 | Abb Research Ltd | Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD |
SE9600705D0 (sv) | 1996-02-26 | 1996-02-26 | Abb Research Ltd | A susceptor for a device for epitaxially growing objects and such a device |
US5788777A (en) | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
US6005226A (en) | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
DE10055033A1 (de) | 2000-11-07 | 2002-05-08 | Aixtron Ag | CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor |
DE10055182A1 (de) | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
DE10056029A1 (de) | 2000-11-11 | 2002-05-16 | Aixtron Ag | Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor |
US6569250B2 (en) | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
DE10132448A1 (de) * | 2001-07-04 | 2003-01-23 | Aixtron Ag | CVD-Vorrichtung mit differenziert temperiertem Substrathalter |
ITMI20020306A1 (it) | 2002-02-15 | 2003-08-18 | Lpe Spa | Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso |
US6797069B2 (en) | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
AU2002368438A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system________________________ |
ATE423226T1 (de) | 2002-12-10 | 2009-03-15 | E T C Epitaxial Technology Ct | Suszeptorsystem |
CN100529198C (zh) | 2004-06-09 | 2009-08-19 | Etc外延技术中心有限公司 | 用于处理装置的支承系统 |
-
2002
- 2002-12-10 AT AT02808223T patent/ATE423226T1/de not_active IP Right Cessation
- 2002-12-10 US US10/538,529 patent/US7615121B2/en not_active Expired - Lifetime
- 2002-12-10 CN CNA028300181A patent/CN1708602A/zh active Pending
- 2002-12-10 DE DE60231256T patent/DE60231256D1/de not_active Expired - Lifetime
- 2002-12-10 AU AU2002368439A patent/AU2002368439A1/en not_active Abandoned
- 2002-12-10 WO PCT/IT2002/000774 patent/WO2004053188A1/en active Application Filing
- 2002-12-10 EP EP02808223A patent/EP1570108B1/de not_active Expired - Lifetime
- 2002-12-10 JP JP2004558343A patent/JP2006513559A/ja active Pending
-
2003
- 2003-06-11 WO PCT/IT2003/000363 patent/WO2004053189A1/en active IP Right Grant
- 2003-06-11 EP EP03812670A patent/EP1581667B1/de not_active Expired - Lifetime
- 2003-06-11 JP JP2004558349A patent/JP2006509363A/ja active Pending
- 2003-06-11 CN CNA038255871A patent/CN1714169A/zh active Pending
- 2003-06-11 KR KR1020057010513A patent/KR20050085503A/ko not_active Application Discontinuation
- 2003-06-11 DE DE60317932T patent/DE60317932T2/de not_active Expired - Lifetime
- 2003-06-11 AT AT03812670T patent/ATE380263T1/de not_active IP Right Cessation
- 2003-06-11 AU AU2003242999A patent/AU2003242999A1/en not_active Abandoned
- 2003-06-11 US US10/538,547 patent/US7387687B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE380263T1 (de) | 2007-12-15 |
CN1708602A (zh) | 2005-12-14 |
EP1581667B1 (de) | 2007-12-05 |
US20060054091A1 (en) | 2006-03-16 |
US20060118048A1 (en) | 2006-06-08 |
DE60231256D1 (de) | 2009-04-02 |
EP1581667A1 (de) | 2005-10-05 |
DE60317932T2 (de) | 2008-11-27 |
AU2002368439A1 (en) | 2004-06-30 |
DE60317932D1 (de) | 2008-01-17 |
JP2006513559A (ja) | 2006-04-20 |
US7615121B2 (en) | 2009-11-10 |
CN1714169A (zh) | 2005-12-28 |
EP1570108B1 (de) | 2009-02-18 |
WO2004053188A1 (en) | 2004-06-24 |
EP1570108A1 (de) | 2005-09-07 |
JP2006509363A (ja) | 2006-03-16 |
KR20050085503A (ko) | 2005-08-29 |
AU2003242999A1 (en) | 2004-06-30 |
US7387687B2 (en) | 2008-06-17 |
WO2004053189A1 (en) | 2004-06-24 |
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