DE60317932D1 - Halterungssystem für eine behandlungsvorrichtung - Google Patents

Halterungssystem für eine behandlungsvorrichtung

Info

Publication number
DE60317932D1
DE60317932D1 DE60317932T DE60317932T DE60317932D1 DE 60317932 D1 DE60317932 D1 DE 60317932D1 DE 60317932 T DE60317932 T DE 60317932T DE 60317932 T DE60317932 T DE 60317932T DE 60317932 D1 DE60317932 D1 DE 60317932D1
Authority
DE
Germany
Prior art keywords
piece
constituted
hand side
wall
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60317932T
Other languages
English (en)
Other versions
DE60317932T2 (de
Inventor
Natale Speciale
Gianluca Valente
Danilo Crippa
Franco Preti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E T C Epitaxial Tech Center Srl
Original Assignee
E T C Epitaxial Tech Center Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E T C Epitaxial Tech Center Srl filed Critical E T C Epitaxial Tech Center Srl
Publication of DE60317932D1 publication Critical patent/DE60317932D1/de
Application granted granted Critical
Publication of DE60317932T2 publication Critical patent/DE60317932T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
    • F27B14/061—Induction furnaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Gripping On Spindles (AREA)
  • Processing Of Meat And Fish (AREA)
  • Paper (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Resistance Welding (AREA)
  • General Induction Heating (AREA)
DE60317932T 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung Expired - Lifetime DE60317932T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
WOPCT/IT02/00774 2002-12-10
PCT/IT2002/000774 WO2004053188A1 (en) 2002-12-10 2002-12-10 Susceptor system
PCT/IT2003/000363 WO2004053189A1 (en) 2002-12-10 2003-06-11 Support system for a treatment apparatus

Publications (2)

Publication Number Publication Date
DE60317932D1 true DE60317932D1 (de) 2008-01-17
DE60317932T2 DE60317932T2 (de) 2008-11-27

Family

ID=32500473

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60231256T Expired - Lifetime DE60231256D1 (de) 2002-12-10 2002-12-10 Suszeptorsystem
DE60317932T Expired - Lifetime DE60317932T2 (de) 2002-12-10 2003-06-11 Halterungssystem für eine behandlungsvorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60231256T Expired - Lifetime DE60231256D1 (de) 2002-12-10 2002-12-10 Suszeptorsystem

Country Status (9)

Country Link
US (2) US7615121B2 (de)
EP (2) EP1570108B1 (de)
JP (2) JP2006513559A (de)
KR (1) KR20050085503A (de)
CN (2) CN1708602A (de)
AT (2) ATE423226T1 (de)
AU (2) AU2002368439A1 (de)
DE (2) DE60231256D1 (de)
WO (2) WO2004053188A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004053188A1 (en) * 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
US8028531B2 (en) * 2004-03-01 2011-10-04 GlobalFoundries, Inc. Mitigating heat in an integrated circuit
JP4923189B2 (ja) * 2004-06-09 2012-04-25 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル 支持システム
EP1790757B1 (de) * 2004-07-22 2013-08-14 Toyo Tanso Co., Ltd. Suszeptor
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
KR100618868B1 (ko) * 2004-10-19 2006-08-31 삼성전자주식회사 스핀 장치
DE102004062553A1 (de) * 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
ITMI20052498A1 (it) * 2005-12-28 2007-06-29 Lpe Spa Camera di reazione a temperatura differenziata
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
KR100885180B1 (ko) * 2006-12-27 2009-02-23 세메스 주식회사 기판 지지유닛, 그리고 상기 기판 지지유닛을 구비하는기판처리장치 및 방법
IL198123A0 (en) * 2008-04-18 2009-12-24 Snecma Propulsion Solide A heat treatment oven with inductive heating
KR20130107001A (ko) * 2012-03-21 2013-10-01 엘지이노텍 주식회사 증착 장치
ITCO20130073A1 (it) 2013-12-19 2015-06-20 Lpe Spa Camera di reazione di un reattore per crescite epitassiali adatta per l'uso con un dispositivo di carico/scarico e reattore
EP3164884B1 (de) 2014-07-03 2022-02-23 LPE S.p.A. Werkzeug zum manipulieren von substraten, manipulationsverfahren und epitaxiereaktor
KR102343103B1 (ko) * 2015-07-10 2021-12-28 주식회사 테스 유기금속화학기상증착장치
JP6648627B2 (ja) 2016-04-27 2020-02-14 三菱電機株式会社 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
CN107435165A (zh) * 2016-05-26 2017-12-05 北京北方华创微电子装备有限公司 一种外延反应腔和化学气相外延设备
WO2018028873A1 (en) * 2016-08-09 2018-02-15 Singulus Technologies Ag A non-contact substrate carrier for simultaneous rotation and levitation of a substrate
KR101885026B1 (ko) * 2017-03-22 2018-08-02 오충석 웨이퍼 회전장치
DE102018131751A1 (de) 2018-12-11 2020-06-18 Aixtron Se Suszeptor eines CVD-Reaktors
IT201800011158A1 (it) 2018-12-17 2020-06-17 Lpe Spa Camera di reazione per un reattore epitassiale di materiale semiconduttore con sezione longitudinale non-uniforme e reattore
CN112648937B (zh) * 2019-10-13 2023-01-06 中北大学 带有防转机构的孔检测装置与检测方法
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
CN110760820A (zh) * 2019-12-05 2020-02-07 深圳市志橙半导体材料有限公司 一种气相沉积炉内气体悬浮装置
CN112951739A (zh) * 2019-12-10 2021-06-11 圆益Ips股份有限公司 基板支撑架及基板处理装置
IT202000021517A1 (it) 2020-09-11 2022-03-11 Lpe Spa Metodo per deposizione cvd di carburo di silicio con drogaggio di tipo n e reattore epitassiale
KR20220067988A (ko) * 2020-11-18 2022-05-25 주식회사 원익아이피에스 기판 지지 조립체 및 기판 처리 장치
CN114686973B (zh) * 2022-03-18 2023-11-14 复旦大学 一种半导体薄膜生长感应加热式设备的反应腔结构
CN115537919B (zh) * 2022-11-01 2024-01-19 江苏汉印机电科技股份有限公司 一种高温气悬浮旋转机构

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1458222A (en) * 1973-03-12 1976-12-08 Electricity Council Furnaces for the production of tubular or cyclindrical ceramic articles
US3980854A (en) * 1974-11-15 1976-09-14 Rca Corporation Graphite susceptor structure for inductively heating semiconductor wafers
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
US4794217A (en) * 1985-04-01 1988-12-27 Qing Hua University Induction system for rapid heat treatment of semiconductor wafers
FR2596070A1 (fr) * 1986-03-21 1987-09-25 Labo Electronique Physique Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan
FR2650841A1 (fr) * 1989-08-11 1991-02-15 Thomson Tubes Electroniques Dispositif de depot d'un materiau sur un support thermiquement conducteur
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5106204A (en) * 1991-03-25 1992-04-21 Dunham James L High unit load gas bearing
US5226383A (en) * 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
US5221356A (en) * 1992-10-08 1993-06-22 Northern Telecom Limited Apparatus for manufacturing semiconductor wafers
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
SE9600705D0 (sv) * 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5788777A (en) * 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE10055033A1 (de) * 2000-11-07 2002-05-08 Aixtron Ag CVD-Reaktor mit grafitschaum-isoliertem, rohrförmigen Suszeptor
DE10055182A1 (de) * 2000-11-08 2002-05-29 Aixtron Ag CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter
DE10056029A1 (de) * 2000-11-11 2002-05-16 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US6569250B2 (en) * 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
ITMI20020306A1 (it) 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
US6797069B2 (en) * 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
WO2004053188A1 (en) 2002-12-10 2004-06-24 E.T.C. Epitaxial Technology Center Srl Susceptor system
CN100507073C (zh) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 感受器系统
JP4923189B2 (ja) * 2004-06-09 2012-04-25 イー・テイ・シー・エピタキシヤル・テクノロジー・センター・エス・アール・エル 支持システム

Also Published As

Publication number Publication date
DE60231256D1 (de) 2009-04-02
ATE380263T1 (de) 2007-12-15
DE60317932T2 (de) 2008-11-27
EP1570108B1 (de) 2009-02-18
KR20050085503A (ko) 2005-08-29
EP1570108A1 (de) 2005-09-07
ATE423226T1 (de) 2009-03-15
US20060054091A1 (en) 2006-03-16
WO2004053189A1 (en) 2004-06-24
EP1581667B1 (de) 2007-12-05
CN1714169A (zh) 2005-12-28
WO2004053188A1 (en) 2004-06-24
AU2003242999A1 (en) 2004-06-30
US20060118048A1 (en) 2006-06-08
AU2002368439A1 (en) 2004-06-30
US7615121B2 (en) 2009-11-10
EP1581667A1 (de) 2005-10-05
CN1708602A (zh) 2005-12-14
US7387687B2 (en) 2008-06-17
JP2006509363A (ja) 2006-03-16
JP2006513559A (ja) 2006-04-20

Similar Documents

Publication Publication Date Title
DE60317932D1 (de) Halterungssystem für eine behandlungsvorrichtung
TWI267161B (en) Wafer susceptor
TW200608458A (en) Semiconductor wafer with layer structure with low warp and bow, and process for producing it
DE60237240D1 (de) Suszeptorsystem
IL159446A0 (en) Needle electrode
WO2011006018A3 (en) Apparatus and method for plasma processing
MXPA02012528A (es) Uso terapeutico de extractos de sophora flavescens o sophora subprostata.
ATE328160T1 (de) Elektrokinetische, geosynthetische struktur
MX2020007236A (es) Unidad de temperatura en un dispositivo de horno para el tratamiento de calor de una pletina.
IL152097A0 (en) Use of pyrazole derivatives for treating infertility
ES471543A1 (es) Procedimiento y aparato para el tratamiento electrolitico depiezas metalicas
ATE488857T1 (de) Anlage zur plasmaprozessierung von endlosmaterial
UA27736C2 (uk) Спосіб безперервного виготовлення електрода без домішок для дугових електропечей
DE69802881D1 (de) Verfahren zur thermischen Behandlung eines feuerfesten, dielektrischen Körpers, zum Beispiel aus Glas, mittels Plasma
TW200626022A (en) Adaptive plasma source and method for processing a semiconductor wafer using the same
AU2003234342A8 (en) Ablated slam-dependent entry
DK1368992T3 (da) Keramisk kogesystem med glaskeramikplade, isolationslag og varmeelementer
YU22802A (sh) Izonipekotamidi za lečenje poremećaja nastalih posredstvom integrina
MXPA03011341A (es) Compuestos fosforicos como estabilizadores.
FI965232A (fi) Menetelmä tulenkestävän muotinosan kuumentamiseksi inudktiivisesti sekä vastaava muotinosa
DK1596998T3 (da) Fremgangsmåde og apparat for elektrisk styring af processer i matricer indeholdende faste stoffer
EA200700005A1 (ru) Электрическая цепь электролизера с биполярными электродами и электролизная установка с биполярными электродами
JPH06136509A (ja) プラズマ浸炭炉
EP1448762A4 (de) Antisense-modulation der expression des toll-ähnlichen rezeptors 4 erfindungsgebiet
MXPA04001048A (es) Imidazopiridinas sustituidas con alquilo, para el tratamiento de trastornos gastrointestinales.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition