ATE406665T1 - Verfahren zur regelung eines ionenstrahls - Google Patents
Verfahren zur regelung eines ionenstrahlsInfo
- Publication number
- ATE406665T1 ATE406665T1 AT06100810T AT06100810T ATE406665T1 AT E406665 T1 ATE406665 T1 AT E406665T1 AT 06100810 T AT06100810 T AT 06100810T AT 06100810 T AT06100810 T AT 06100810T AT E406665 T1 ATE406665 T1 AT E406665T1
- Authority
- AT
- Austria
- Prior art keywords
- axis
- ions
- ion beam
- controlling
- ion
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
- H01J27/22—Metal ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0805—Liquid metal sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1501—Beam alignment means or procedures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1502—Mechanical adjustments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Physical Vapour Deposition (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0104173A FR2823005B1 (fr) | 2001-03-28 | 2001-03-28 | Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE406665T1 true ATE406665T1 (de) | 2008-09-15 |
Family
ID=8861630
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06100810T ATE406665T1 (de) | 2001-03-28 | 2002-03-26 | Verfahren zur regelung eines ionenstrahls |
AT02722381T ATE327570T1 (de) | 2001-03-28 | 2002-03-26 | Ionenstrahlerzeugungsvorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02722381T ATE327570T1 (de) | 2001-03-28 | 2002-03-26 | Ionenstrahlerzeugungsvorrichtung |
Country Status (9)
Country | Link |
---|---|
US (1) | US6864495B2 (de) |
EP (2) | EP1699067B1 (de) |
JP (1) | JP2004527078A (de) |
AT (2) | ATE406665T1 (de) |
CA (1) | CA2442189C (de) |
DE (2) | DE60211672T2 (de) |
ES (2) | ES2313542T3 (de) |
FR (1) | FR2823005B1 (de) |
WO (1) | WO2002078036A2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4611755B2 (ja) * | 2005-01-13 | 2011-01-12 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡及びその撮像方法 |
EP1752992A1 (de) * | 2005-08-12 | 2007-02-14 | Siemens Aktiengesellschaft | Vorrichtung zur Anpassung mindestens eines Partikelstrahlparameters eines Partikelstrahls einer Partikelbeschleunigeranlage und Partikelbeschleunigeranlage mit einer derartigen Vorrichtung |
CN101461026B (zh) * | 2006-06-07 | 2012-01-18 | Fei公司 | 与包含真空室的装置一起使用的滑动轴承 |
FR2936091B1 (fr) * | 2008-09-15 | 2010-10-29 | Centre Nat Rech Scient | Dispositif de generation d'un faisceau d'ions avec filtre magnetique. |
EP2342733B1 (de) | 2008-09-15 | 2017-11-01 | Centre National de la Recherche Scientifique (CNRS) | Einrichtung zur erzeugung eines ionenstrahls mit cryogenfalle |
FR2936092B1 (fr) * | 2008-09-15 | 2012-04-06 | Centre Nat Rech Scient | Dispositif de generation d'un faisceau d'ions avec piege cryogenique. |
US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
US9006688B2 (en) * | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
FR3094046B1 (fr) * | 2019-03-18 | 2021-04-23 | Centre Nat Rech Scient | Procédé de contrôle d’un propulseur ionique, et système de propulsion ionique |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4426582A (en) * | 1980-01-21 | 1984-01-17 | Oregon Graduate Center | Charged particle beam apparatus and method utilizing liquid metal field ionization source and asymmetric three element lens system |
JPS5856332A (ja) * | 1981-09-30 | 1983-04-04 | Hitachi Ltd | マスクの欠陥修正方法 |
JPS6062045A (ja) * | 1983-09-14 | 1985-04-10 | Hitachi Ltd | イオンマイクロビ−ム打込み装置 |
JPS6190161A (ja) * | 1984-10-09 | 1986-05-08 | Seiko Instr & Electronics Ltd | 集束イオンビ−ムのビ−ム形状調整方法 |
JPS63305358A (ja) * | 1987-06-05 | 1988-12-13 | Seiko Instr & Electronics Ltd | パターン膜修正方法 |
US5149976A (en) * | 1990-08-31 | 1992-09-22 | Hughes Aircraft Company | Charged particle beam pattern generation apparatus and method |
FR2722333B1 (fr) * | 1994-07-07 | 1996-09-13 | Rech Scient Snrs Centre Nat De | Source d'ions de metaux liquides |
EP0706199B1 (de) | 1994-10-07 | 2003-07-02 | International Business Machines Corporation | Flüssige ionische Zusammensetzungen verwendende Ionenpunktquellen hoher Luminosität |
JP3305553B2 (ja) * | 1995-11-17 | 2002-07-22 | 株式会社荏原製作所 | 高速原子線源 |
US5916424A (en) * | 1996-04-19 | 1999-06-29 | Micrion Corporation | Thin film magnetic recording heads and systems and methods for manufacturing the same |
JP2004510295A (ja) * | 2000-09-20 | 2004-04-02 | エフ・イ−・アイ・カンパニー | 荷電粒子ビームシステムにおける同時の映像化と照射のためのリアルタイムモニタリング |
-
2001
- 2001-03-28 FR FR0104173A patent/FR2823005B1/fr not_active Expired - Lifetime
-
2002
- 2002-03-26 US US10/472,090 patent/US6864495B2/en not_active Expired - Lifetime
- 2002-03-26 AT AT06100810T patent/ATE406665T1/de not_active IP Right Cessation
- 2002-03-26 DE DE60211672T patent/DE60211672T2/de not_active Expired - Lifetime
- 2002-03-26 EP EP06100810A patent/EP1699067B1/de not_active Expired - Lifetime
- 2002-03-26 DE DE60228637T patent/DE60228637D1/de not_active Expired - Lifetime
- 2002-03-26 ES ES06100810T patent/ES2313542T3/es not_active Expired - Lifetime
- 2002-03-26 CA CA2442189A patent/CA2442189C/fr not_active Expired - Lifetime
- 2002-03-26 AT AT02722381T patent/ATE327570T1/de not_active IP Right Cessation
- 2002-03-26 EP EP02722381A patent/EP1374270B1/de not_active Expired - Lifetime
- 2002-03-26 WO PCT/FR2002/001041 patent/WO2002078036A2/fr active IP Right Grant
- 2002-03-26 ES ES02722381T patent/ES2265496T3/es not_active Expired - Lifetime
- 2002-03-26 JP JP2002575979A patent/JP2004527078A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1699067A3 (de) | 2007-06-06 |
WO2002078036A2 (fr) | 2002-10-03 |
JP2004527078A (ja) | 2004-09-02 |
EP1699067A2 (de) | 2006-09-06 |
ATE327570T1 (de) | 2006-06-15 |
EP1699067B1 (de) | 2008-08-27 |
ES2313542T3 (es) | 2009-03-01 |
CA2442189C (fr) | 2014-09-30 |
EP1374270B1 (de) | 2006-05-24 |
DE60211672T2 (de) | 2007-05-03 |
EP1374270A2 (de) | 2004-01-02 |
CA2442189A1 (fr) | 2002-10-03 |
WO2002078036A3 (fr) | 2002-11-14 |
US20040094725A1 (en) | 2004-05-20 |
ES2265496T3 (es) | 2007-02-16 |
DE60211672D1 (de) | 2006-06-29 |
FR2823005B1 (fr) | 2003-05-16 |
FR2823005A1 (fr) | 2002-10-04 |
DE60228637D1 (de) | 2008-10-09 |
US6864495B2 (en) | 2005-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |