ATE401671T1 - Hall-effekt element mit integrierter abweichungsregelung und verfahren zum betreiben eines solchen elements zur reduzierung der nullpunktabweichung - Google Patents

Hall-effekt element mit integrierter abweichungsregelung und verfahren zum betreiben eines solchen elements zur reduzierung der nullpunktabweichung

Info

Publication number
ATE401671T1
ATE401671T1 AT01924664T AT01924664T ATE401671T1 AT E401671 T1 ATE401671 T1 AT E401671T1 AT 01924664 T AT01924664 T AT 01924664T AT 01924664 T AT01924664 T AT 01924664T AT E401671 T1 ATE401671 T1 AT E401671T1
Authority
AT
Austria
Prior art keywords
layer
active layer
axis
disposed
disposing
Prior art date
Application number
AT01924664T
Other languages
English (en)
Inventor
Mark Plagens
Walter Matger
Michael Haji-Sheikh
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Application granted granted Critical
Publication of ATE401671T1 publication Critical patent/ATE401671T1/de

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/101Semiconductor Hall-effect devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07Hall effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
AT01924664T 2000-04-04 2001-04-04 Hall-effekt element mit integrierter abweichungsregelung und verfahren zum betreiben eines solchen elements zur reduzierung der nullpunktabweichung ATE401671T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/542,213 US6492697B1 (en) 2000-04-04 2000-04-04 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset

Publications (1)

Publication Number Publication Date
ATE401671T1 true ATE401671T1 (de) 2008-08-15

Family

ID=24162811

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01924664T ATE401671T1 (de) 2000-04-04 2001-04-04 Hall-effekt element mit integrierter abweichungsregelung und verfahren zum betreiben eines solchen elements zur reduzierung der nullpunktabweichung

Country Status (7)

Country Link
US (1) US6492697B1 (de)
EP (1) EP1269552B1 (de)
JP (1) JP2003532279A (de)
AT (1) ATE401671T1 (de)
CA (1) CA2405149A1 (de)
DE (1) DE60134839D1 (de)
WO (1) WO2001074139A2 (de)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002322971A1 (en) * 2002-09-10 2004-04-30 Sentron Ag Magnetic field sensor comprising a hall element
JP2004207477A (ja) * 2002-12-25 2004-07-22 Sanken Electric Co Ltd ホール素子を有する半導体装置
NL1024114C1 (nl) * 2003-08-15 2005-02-16 Systematic Design Holding B V Werkwijze en inrichting voor het verrichten van metingen aan magnetische velden met gebruik van een hall-sensor.
US7015557B2 (en) * 2004-04-16 2006-03-21 Honeywell International Inc. Hall element with segmented field plate
US7002229B2 (en) * 2004-06-16 2006-02-21 Honeywell International Inc. Self aligned Hall with field plate
US7019517B2 (en) * 2004-07-20 2006-03-28 Honeywell International Inc. Offset magnet rotary position sensor
JP4039436B2 (ja) * 2004-08-06 2008-01-30 株式会社デンソー 回転角検出装置
US7019607B2 (en) * 2004-08-09 2006-03-28 Honeywell International Inc. Precision non-contact digital switch
US7173412B2 (en) * 2004-11-30 2007-02-06 Honeywell International Inc. Quadrature sensor systems and methods
US8266982B2 (en) 2005-01-18 2012-09-18 Kongsberg Automotive Holding Asa, Inc. Method and apparatus for pedal hysteresis
US7205622B2 (en) * 2005-01-20 2007-04-17 Honeywell International Inc. Vertical hall effect device
US7271584B2 (en) * 2005-07-09 2007-09-18 Honeywell International Inc. Magnetic sensing apparatus
US7687882B2 (en) 2006-04-14 2010-03-30 Allegro Microsystems, Inc. Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor
US7573112B2 (en) 2006-04-14 2009-08-11 Allegro Microsystems, Inc. Methods and apparatus for sensor having capacitor on chip
US7382120B2 (en) * 2006-04-26 2008-06-03 Honeywell International Inc. Rotary position sensor with rectangular magnet and hall sensors placed in association with the surface of the magnet
US7389685B2 (en) * 2006-06-13 2008-06-24 Honeywell International Inc. Downhole pressure transmitter
US20080013298A1 (en) 2006-07-14 2008-01-17 Nirmal Sharma Methods and apparatus for passive attachment of components for integrated circuits
GB0723973D0 (en) * 2007-12-07 2008-01-16 Melexis Nv Hall sensor array
US9823090B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a target object
US7772661B2 (en) * 2008-07-23 2010-08-10 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
US8624588B2 (en) 2008-07-31 2014-01-07 Allegro Microsystems, Llc Apparatus and method for providing an output signal indicative of a speed of rotation and a direction of rotation as a ferromagnetic object
JP5998380B2 (ja) * 2011-03-07 2016-09-28 国立研究開発法人産業技術総合研究所 半導体基板、半導体装置および半導体基板の製造方法
US8629539B2 (en) 2012-01-16 2014-01-14 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having non-conductive die paddle
US9812588B2 (en) 2012-03-20 2017-11-07 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US10234513B2 (en) 2012-03-20 2019-03-19 Allegro Microsystems, Llc Magnetic field sensor integrated circuit with integral ferromagnetic material
US9666788B2 (en) 2012-03-20 2017-05-30 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9494660B2 (en) 2012-03-20 2016-11-15 Allegro Microsystems, Llc Integrated circuit package having a split lead frame
US9817078B2 (en) 2012-05-10 2017-11-14 Allegro Microsystems Llc Methods and apparatus for magnetic sensor having integrated coil
US9484525B2 (en) * 2012-05-15 2016-11-01 Infineon Technologies Ag Hall effect device
US8754640B2 (en) 2012-06-18 2014-06-17 Allegro Microsystems, Llc Magnetic field sensors and related techniques that can provide self-test information in a formatted output signal
US9411025B2 (en) 2013-04-26 2016-08-09 Allegro Microsystems, Llc Integrated circuit package having a split lead frame and a magnet
KR102019514B1 (ko) * 2013-06-28 2019-11-15 매그나칩 반도체 유한회사 반도체 기반의 홀 센서
US10495699B2 (en) 2013-07-19 2019-12-03 Allegro Microsystems, Llc Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target
US10145908B2 (en) 2013-07-19 2018-12-04 Allegro Microsystems, Llc Method and apparatus for magnetic sensor producing a changing magnetic field
US9810519B2 (en) 2013-07-19 2017-11-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as tooth detectors
US9823092B2 (en) 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US9720054B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
US9719806B2 (en) 2014-10-31 2017-08-01 Allegro Microsystems, Llc Magnetic field sensor for sensing a movement of a ferromagnetic target object
US10712403B2 (en) 2014-10-31 2020-07-14 Allegro Microsystems, Llc Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element
JP6612887B2 (ja) * 2015-09-24 2019-11-27 旭化成エレクトロニクス株式会社 ホール素子及びホールセンサ、レンズモジュール
JP6608666B2 (ja) * 2015-10-16 2019-11-20 旭化成エレクトロニクス株式会社 ホール素子及びホールセンサ、レンズモジュール
US10411498B2 (en) 2015-10-21 2019-09-10 Allegro Microsystems, Llc Apparatus and methods for extending sensor integrated circuit operation through a power disturbance
US10495700B2 (en) 2016-01-29 2019-12-03 Allegro Microsystems, Llc Method and system for providing information about a target object in a formatted output signal
WO2017201002A2 (en) 2016-05-17 2017-11-23 Allegro Microsystems, Llc Magnetic field sensors and output signal formats for a magnetic field sensor
US10260905B2 (en) 2016-06-08 2019-04-16 Allegro Microsystems, Llc Arrangements for magnetic field sensors to cancel offset variations
US10012518B2 (en) 2016-06-08 2018-07-03 Allegro Microsystems, Llc Magnetic field sensor for sensing a proximity of an object
US10041810B2 (en) 2016-06-08 2018-08-07 Allegro Microsystems, Llc Arrangements for magnetic field sensors that act as movement detectors
US11029372B2 (en) * 2016-11-18 2021-06-08 Asahi Kasei Microdevices Corporation Hall element for mitigating current concentration and fabrication method thereof
JP7015087B2 (ja) * 2017-03-23 2022-02-02 旭化成エレクトロニクス株式会社 ホール素子
US10837943B2 (en) 2017-05-26 2020-11-17 Allegro Microsystems, Llc Magnetic field sensor with error calculation
US10641842B2 (en) 2017-05-26 2020-05-05 Allegro Microsystems, Llc Targets for coil actuated position sensors
US11428755B2 (en) 2017-05-26 2022-08-30 Allegro Microsystems, Llc Coil actuated sensor with sensitivity detection
US10996289B2 (en) 2017-05-26 2021-05-04 Allegro Microsystems, Llc Coil actuated position sensor with reflected magnetic field
US10324141B2 (en) 2017-05-26 2019-06-18 Allegro Microsystems, Llc Packages for coil actuated position sensors
US10310028B2 (en) 2017-05-26 2019-06-04 Allegro Microsystems, Llc Coil actuated pressure sensor
US10866117B2 (en) 2018-03-01 2020-12-15 Allegro Microsystems, Llc Magnetic field influence during rotation movement of magnetic target
US10978897B2 (en) 2018-04-02 2021-04-13 Allegro Microsystems, Llc Systems and methods for suppressing undesirable voltage supply artifacts
US10656170B2 (en) 2018-05-17 2020-05-19 Allegro Microsystems, Llc Magnetic field sensors and output signal formats for a magnetic field sensor
US11255700B2 (en) 2018-08-06 2022-02-22 Allegro Microsystems, Llc Magnetic field sensor
US10823586B2 (en) 2018-12-26 2020-11-03 Allegro Microsystems, Llc Magnetic field sensor having unequally spaced magnetic field sensing elements
US11061084B2 (en) 2019-03-07 2021-07-13 Allegro Microsystems, Llc Coil actuated pressure sensor and deflectable substrate
US11588101B2 (en) * 2019-03-30 2023-02-21 Texas Instruments Incorporated Hall sensor with performance control
US10955306B2 (en) 2019-04-22 2021-03-23 Allegro Microsystems, Llc Coil actuated pressure sensor and deformable substrate
US10991644B2 (en) 2019-08-22 2021-04-27 Allegro Microsystems, Llc Integrated circuit package having a low profile
US11237020B2 (en) 2019-11-14 2022-02-01 Allegro Microsystems, Llc Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet
US11280637B2 (en) 2019-11-14 2022-03-22 Allegro Microsystems, Llc High performance magnetic angle sensor
US11372061B2 (en) * 2020-03-13 2022-06-28 Globalfoundries Singapore Pte. Ltd. Hall effect sensor devices and methods of forming hall effect sensor devices
US11262422B2 (en) 2020-05-08 2022-03-01 Allegro Microsystems, Llc Stray-field-immune coil-activated position sensor
US11493361B2 (en) 2021-02-26 2022-11-08 Allegro Microsystems, Llc Stray field immune coil-activated sensor
US11578997B1 (en) 2021-08-24 2023-02-14 Allegro Microsystems, Llc Angle sensor using eddy currents
US12449279B2 (en) 2024-02-07 2025-10-21 Allegro Microsystems, Llc Dynamic resolution sensor
US12523717B2 (en) 2024-02-15 2026-01-13 Allegro Microsystems, Llc Closed loop magnetic field sensor with current control

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3825777A (en) * 1973-02-14 1974-07-23 Ibm Hall cell with offset voltage control
US4660065A (en) * 1983-06-10 1987-04-21 Texas Instruments Incorporated Hall effect device with surface potential shielding layer
CH668146A5 (de) 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
JPS6385487A (ja) * 1986-09-30 1988-04-15 Toshiba Corp 放射線検出器
JPH01162386A (ja) * 1987-12-18 1989-06-26 Matsushita Electron Corp ホール素子
JP3602611B2 (ja) 1995-03-30 2004-12-15 株式会社東芝 横型ホール素子
JPH10270773A (ja) 1997-03-26 1998-10-09 Toshiba Corp ホール素子
JP3592499B2 (ja) 1997-09-09 2004-11-24 株式会社東芝 ホール素子

Also Published As

Publication number Publication date
US6492697B1 (en) 2002-12-10
DE60134839D1 (de) 2008-08-28
WO2001074139A3 (en) 2002-09-26
EP1269552B1 (de) 2008-07-16
JP2003532279A (ja) 2003-10-28
EP1269552A2 (de) 2003-01-02
CA2405149A1 (en) 2001-10-11
WO2001074139A2 (en) 2001-10-11

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