ATE399366T1 - Abgabevorrichtungs-kathode - Google Patents

Abgabevorrichtungs-kathode

Info

Publication number
ATE399366T1
ATE399366T1 AT04711065T AT04711065T ATE399366T1 AT E399366 T1 ATE399366 T1 AT E399366T1 AT 04711065 T AT04711065 T AT 04711065T AT 04711065 T AT04711065 T AT 04711065T AT E399366 T1 ATE399366 T1 AT E399366T1
Authority
AT
Austria
Prior art keywords
emission
emission area
reservoir
work
function
Prior art date
Application number
AT04711065T
Other languages
English (en)
Inventor
Pieter Kruit
Stijn Willem Herman Steenbrink
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE399366T1 publication Critical patent/ATE399366T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/13Solid thermionic cathodes
    • H01J1/20Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/28Dispenser-type cathodes, e.g. L-cathode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/065Construction of guns or parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04Cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31752Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31754Lithography using particular beams or near-field effects, e.g. STM-like techniques using electron beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
    • H01J2237/31774Multi-beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Solid Thermionic Cathode (AREA)
  • Nozzles (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)
AT04711065T 2003-02-14 2004-02-13 Abgabevorrichtungs-kathode ATE399366T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US44797503P 2003-02-14 2003-02-14

Publications (1)

Publication Number Publication Date
ATE399366T1 true ATE399366T1 (de) 2008-07-15

Family

ID=32869649

Family Applications (2)

Application Number Title Priority Date Filing Date
AT10181079T ATE552607T1 (de) 2003-02-14 2004-02-13 Vorratskathode
AT04711065T ATE399366T1 (de) 2003-02-14 2004-02-13 Abgabevorrichtungs-kathode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT10181079T ATE552607T1 (de) 2003-02-14 2004-02-13 Vorratskathode

Country Status (8)

Country Link
US (4) US7215070B2 (de)
EP (4) EP2267747B1 (de)
JP (2) JP4624980B2 (de)
KR (1) KR101072948B1 (de)
CN (1) CN1830051B (de)
AT (2) ATE552607T1 (de)
DE (1) DE602004014590D1 (de)
WO (1) WO2004072732A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267747B1 (de) * 2003-02-14 2014-05-14 Mapper Lithography Ip B.V. Lithographiesystem mit Vorratskathode
US20100060136A1 (en) * 2004-12-09 2010-03-11 Koninklijke Philips Electronics, N.V. Cathode for electron emission
US7545089B1 (en) * 2005-03-21 2009-06-09 Calabazas Creek Research, Inc. Sintered wire cathode
US7317785B1 (en) 2006-12-11 2008-01-08 General Electric Company System and method for X-ray spot control
WO2007102947A1 (en) * 2006-03-06 2007-09-13 General Electric Company System and method for x-ray spot control
EP2148354B1 (de) * 2007-05-16 2014-09-24 Denki Kagaku Kogyo Kabushiki Kaisha Elektronenquelle
US9220501B2 (en) 2010-09-30 2015-12-29 Ethicon Endo-Surgery, Inc. Tissue thickness compensators
US9165737B2 (en) * 2012-10-04 2015-10-20 Nuflare Technology, Inc. High-brightness, long life thermionic cathode and methods of its fabrication
NL2014029B1 (en) * 2013-12-30 2016-01-08 Mapper Lithography Ip Bv Cathode arrangement, electron gun, and lithography system comprising such electron gun.
US10269530B1 (en) * 2017-11-29 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Ion beam source for semiconductor ion implantation

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NL165880C (nl) 1975-02-21 1981-05-15 Philips Nv Naleveringskathode.
FR2390825A1 (fr) * 1977-05-13 1978-12-08 Thomson Csf Cathode thermo-ionique a grille incorporee, son procede de fabrication et tube electronique comportant une telle cathode
US4101800A (en) * 1977-07-06 1978-07-18 The United States Of America As Represented By The Secretary Of The Navy Controlled-porosity dispenser cathode
US4310603A (en) 1978-11-30 1982-01-12 Varian Associates, Inc. Dispenser cathode
NL7905542A (nl) 1979-07-17 1981-01-20 Philips Nv Naleveringskathode.
US4379979A (en) * 1981-02-06 1983-04-12 The United States Of America As Represented By The Secretary Of The Navy Controlled porosity sheet for thermionic dispenser cathode and method of manufacture
US4460831A (en) * 1981-11-30 1984-07-17 Thermo Electron Corporation Laser stimulated high current density photoelectron generator and method of manufacture
JPS58111236A (ja) * 1981-12-25 1983-07-02 Toshiba Corp 電子銃構体
US4587455A (en) * 1982-10-12 1986-05-06 Hughes Aircraft Company Controlled porosity dispenser cathode
EP0121564B1 (de) * 1982-10-12 1987-11-25 Hughes Aircraft Company Verfahren zum herstellen eines vorratsbehaelters einer vorratskathode
JPS6062034A (ja) * 1983-09-14 1985-04-10 Hitachi Ltd 熱陰極構体
US4583023A (en) * 1984-07-23 1986-04-15 Avco Everett Research Laboratory, Inc. Electron beam heated thermionic cathode
NL8403032A (nl) 1984-10-05 1986-05-01 Philips Nv Werkwijze voor het vervaardigen van een scandaatnaleveringskathode, naleveringskathode vervaardigd met deze werkwijze.
NL8600675A (nl) * 1986-03-17 1987-10-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom.
JPS63164138A (ja) * 1986-12-26 1988-07-07 Hitachi Ltd 含浸形陰極構体
NL8701584A (nl) * 1987-07-06 1989-02-01 Philips Nv Werkwijze voor de vervaardiging van een naleveringskathode; naleveringskathode vervaardigd volgens de werkwijze; lopende golfbuis, klystron en zendbuis bevattende een kathode vervaardigd volgens de werkwijze.
US5261845A (en) 1987-07-06 1993-11-16 U.S. Philips Corporation Scandate cathode
NL8900765A (nl) 1989-03-29 1990-10-16 Philips Nv Scandaatkathode.
US5126574A (en) * 1989-10-10 1992-06-30 The United States Of America As Represented By The Secretary Of Commerce Microtip-controlled nanostructure fabrication and multi-tipped field-emission tool for parallel-process nanostructure fabrication
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US5072148A (en) * 1990-10-15 1991-12-10 Itt Corporation Dispenser cathode with emitting surface parallel to ion flow and use in thyratrons
US5696028A (en) * 1992-02-14 1997-12-09 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
DE69409306T2 (de) * 1993-07-29 1998-07-30 Nec Corp Thermisch emittierende Kathode, Herstellungsverfahren einer solchen thermisch emittierende Kathode und Elektronenstrahl-Gerät
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KR100225335B1 (ko) 1996-03-04 1999-10-15 미따라이 하지메 전자빔노광장치와 그 방법 및 디바이스제조방법
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JP4647820B2 (ja) * 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
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EP2267747B1 (de) * 2003-02-14 2014-05-14 Mapper Lithography Ip B.V. Lithographiesystem mit Vorratskathode
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Also Published As

Publication number Publication date
CN1830051B (zh) 2010-04-28
WO2004072732A3 (en) 2005-02-24
US8263942B2 (en) 2012-09-11
CN1830051A (zh) 2006-09-06
EP2293316A1 (de) 2011-03-09
EP2267747B1 (de) 2014-05-14
US20060028114A1 (en) 2006-02-09
US7215070B2 (en) 2007-05-08
EP1959473A3 (de) 2008-09-03
EP2293316B1 (de) 2012-04-04
US20100219357A1 (en) 2010-09-02
KR20050109492A (ko) 2005-11-21
JP4624980B2 (ja) 2011-02-02
KR101072948B1 (ko) 2011-10-17
US20070182303A1 (en) 2007-08-09
DE602004014590D1 (de) 2008-08-07
EP1593140A2 (de) 2005-11-09
US20110180721A1 (en) 2011-07-28
JP2006518109A (ja) 2006-08-03
EP1593140B1 (de) 2008-06-25
US7710009B2 (en) 2010-05-04
WO2004072732A2 (en) 2004-08-26
ATE552607T1 (de) 2012-04-15
JP2011040398A (ja) 2011-02-24
EP2267747A1 (de) 2010-12-29
EP1959473A2 (de) 2008-08-20
US8247958B2 (en) 2012-08-21

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