ATE398279T1 - Strukturen für temperaturfühler und ir-detektoren - Google Patents
Strukturen für temperaturfühler und ir-detektorenInfo
- Publication number
- ATE398279T1 ATE398279T1 AT97900835T AT97900835T ATE398279T1 AT E398279 T1 ATE398279 T1 AT E398279T1 AT 97900835 T AT97900835 T AT 97900835T AT 97900835 T AT97900835 T AT 97900835T AT E398279 T1 ATE398279 T1 AT E398279T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- quantum well
- thermistor
- layers
- temperature sensors
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 230000001419 dependent effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Fire-Detection Mechanisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9600097A SE505753C3 (sv) | 1996-01-11 | 1996-01-11 | Strukturer foer temperatursensorer och infraroeddetektorer |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE398279T1 true ATE398279T1 (de) | 2008-07-15 |
Family
ID=20400991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97900835T ATE398279T1 (de) | 1996-01-11 | 1997-01-10 | Strukturen für temperaturfühler und ir-detektoren |
Country Status (8)
Country | Link |
---|---|
US (1) | US6292089B1 (de) |
EP (1) | EP0873500B1 (de) |
JP (1) | JP3573754B2 (de) |
AT (1) | ATE398279T1 (de) |
AU (1) | AU1325697A (de) |
DE (1) | DE69738759D1 (de) |
SE (1) | SE505753C3 (de) |
WO (1) | WO1997025600A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0964230A3 (de) * | 1998-06-09 | 2000-01-26 | Heraeus Electro-Nite International N.V. | Elektrischer Widerstand mit wenigstens zwei Anschlusskontaktfeldern auf einem Keramik-Substrat sowie Verfahren zu dessen Herstellung |
US20070295713A1 (en) * | 2006-06-15 | 2007-12-27 | John Carlton-Foss | System and method for measuring core body temperature |
EP1912260B1 (de) * | 2006-10-13 | 2016-12-14 | Acreo Swedish ICT AB | Eine Quantenpunkt-Thermistor-Struktur und ihre Verwendung |
EP1912259A1 (de) * | 2006-10-13 | 2008-04-16 | Acreo AB | Eine Quantenpunkt-Thermistor-Struktur und ihre Verwendung |
SE533025C2 (sv) | 2008-06-25 | 2010-06-08 | Acreo Ab | Strukturer för temperatursensorer och infraröddetektorer |
SE533944C2 (sv) * | 2008-12-19 | 2011-03-08 | Henry H Radamson | En flerlagersstruktur |
EP2363887A1 (de) | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Fokalebenenarray und seine Herstellungsmethode |
EP2363888A1 (de) | 2010-03-02 | 2011-09-07 | SensoNor Technologies AS | Fokalebenenarray und seine Herstellungsmethode |
JP5110107B2 (ja) * | 2010-03-11 | 2012-12-26 | 株式会社デンソー | 温度センサ及び温度センサの製造方法 |
CN103238049B (zh) * | 2010-10-11 | 2015-10-21 | Ud控股有限责任公司 | 超点阵量子阱红外探测器 |
TWI447365B (zh) * | 2011-05-24 | 2014-08-01 | Univ Nat Kaohsiung Applied Sci | Single crystal silicon thermal sensor and its preparation method |
CN103630247B (zh) * | 2012-08-27 | 2016-04-20 | 南京理工大学 | 非制冷红外探测阵列用自掺杂硅锗/硅多量子阱热敏材料 |
US10134881B1 (en) | 2017-05-18 | 2018-11-20 | Qualcomm Incorporated | Quantum well thermal sensing for power amplifier |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5450053A (en) * | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
US4711857A (en) * | 1986-08-28 | 1987-12-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Tailorable infrared sensing device with strain layer superlattice structure |
FR2640044B1 (fr) * | 1988-12-06 | 1993-02-12 | Thomson Csf | Dispositif de detection de rayonnements optiques |
WO1991016607A1 (en) * | 1990-04-26 | 1991-10-31 | Commonwealth Of Australia, The Secretary Department Of Defence | Semiconductor film bolometer thermal infrared detector |
FR2670006B1 (fr) * | 1990-11-29 | 1993-03-12 | Thomson Csf | Bolometre electronique a puits quantique et application a un detecteur de rayonnements. |
US5182670A (en) * | 1991-08-30 | 1993-01-26 | Apa Optics, Inc. | Narrow band algan filter |
EP0534769B1 (de) | 1991-09-27 | 1997-07-23 | Texas Instruments Incorporated | Lese-System und Verfahren für Infrarotdetektoranordnungen |
US5260225A (en) | 1991-12-20 | 1993-11-09 | Honeywell Inc. | Integrated infrared sensitive bolometers |
US5300789A (en) * | 1991-12-24 | 1994-04-05 | At&T Bell Laboratories | Article comprising means for modulating the optical transparency of a semiconductor body, and method of operating the article |
FR2686456A1 (fr) * | 1992-01-22 | 1993-07-23 | Picogiga Sa | Detecteur infrarouge a puits quantiques. |
FR2693594B1 (fr) * | 1992-07-07 | 1994-08-26 | Thomson Csf | Détecteur d'ondes électromagnétiques à puits quantiques. |
US5426412A (en) * | 1992-10-27 | 1995-06-20 | Matsushita Electric Works, Ltd. | Infrared detecting device and infrared detecting element for use in the device |
JPH06347734A (ja) * | 1993-06-11 | 1994-12-22 | Nec Corp | 面型光スイッチ |
CA2127596C (en) * | 1993-07-16 | 2003-12-02 | Hui Chun Liu | Multicolour voltage tunable quantum well intersubband infrared photodetector and associated method |
FR2719417B1 (fr) * | 1994-04-28 | 1996-07-19 | Person Henri Le | Composant à hétérostructure semi-conductrice, commande par la lumière pour la génération d'oscillations hyperfréquences. |
US5488226A (en) | 1994-11-18 | 1996-01-30 | The United States Of America As Represented By The Secretary Of The Army | Infrared imaging array based on temperature driven anisotropic optical absorption |
-
1996
- 1996-01-11 SE SE9600097A patent/SE505753C3/sv not_active IP Right Cessation
-
1997
- 1997-01-10 EP EP97900835A patent/EP0873500B1/de not_active Expired - Lifetime
- 1997-01-10 JP JP52514897A patent/JP3573754B2/ja not_active Expired - Lifetime
- 1997-01-10 DE DE69738759T patent/DE69738759D1/de not_active Expired - Lifetime
- 1997-01-10 US US09/101,597 patent/US6292089B1/en not_active Expired - Lifetime
- 1997-01-10 AU AU13256/97A patent/AU1325697A/en not_active Abandoned
- 1997-01-10 AT AT97900835T patent/ATE398279T1/de not_active IP Right Cessation
- 1997-01-10 WO PCT/SE1997/000025 patent/WO1997025600A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
SE505753C2 (sv) | 1997-10-06 |
SE505753C3 (sv) | 1997-10-06 |
WO1997025600A1 (en) | 1997-07-17 |
AU1325697A (en) | 1997-08-01 |
EP0873500B1 (de) | 2008-06-11 |
SE9600097D0 (sv) | 1996-01-11 |
DE69738759D1 (de) | 2008-07-24 |
JP3573754B2 (ja) | 2004-10-06 |
JP2000503121A (ja) | 2000-03-14 |
SE9600097L (sv) | 1997-07-12 |
US6292089B1 (en) | 2001-09-18 |
EP0873500A1 (de) | 1998-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |