ATE397782T1 - Hybrides optisches element für röntgenstrahl- anwendungen und zugehöriges verfahren - Google Patents

Hybrides optisches element für röntgenstrahl- anwendungen und zugehöriges verfahren

Info

Publication number
ATE397782T1
ATE397782T1 AT02740845T AT02740845T ATE397782T1 AT E397782 T1 ATE397782 T1 AT E397782T1 AT 02740845 T AT02740845 T AT 02740845T AT 02740845 T AT02740845 T AT 02740845T AT E397782 T1 ATE397782 T1 AT E397782T1
Authority
AT
Austria
Prior art keywords
optical element
associated method
hybrid optical
producing
optical effect
Prior art date
Application number
AT02740845T
Other languages
English (en)
Inventor
Peter Hoghoj
Original Assignee
Xenocs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0107228A external-priority patent/FR2825473B1/fr
Application filed by Xenocs filed Critical Xenocs
Application granted granted Critical
Publication of ATE397782T1 publication Critical patent/ATE397782T1/de

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • G02B5/0883Mirrors with a refractive index gradient
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • G02B5/1838Diffraction gratings for use with ultraviolet radiation or X-rays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/26Reflecting filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/28Interference filters
    • G02B5/283Interference filters designed for the ultraviolet
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Integrated Circuits (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Glass Compositions (AREA)
  • Materials For Medical Uses (AREA)
AT02740845T 2001-06-01 2002-05-31 Hybrides optisches element für röntgenstrahl- anwendungen und zugehöriges verfahren ATE397782T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0107228A FR2825473B1 (fr) 2001-06-01 2001-06-01 Procede de modification controlee de proprietes reflectives d'un multicouche
FR0109729 2001-07-20

Publications (1)

Publication Number Publication Date
ATE397782T1 true ATE397782T1 (de) 2008-06-15

Family

ID=26213032

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02740845T ATE397782T1 (de) 2001-06-01 2002-05-31 Hybrides optisches element für röntgenstrahl- anwendungen und zugehöriges verfahren

Country Status (7)

Country Link
US (1) US20050094271A1 (de)
EP (2) EP1395857A2 (de)
JP (1) JP2004529388A (de)
AT (1) ATE397782T1 (de)
AU (2) AU2002344277A1 (de)
DE (1) DE60226973D1 (de)
WO (2) WO2002097486A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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CN1327250C (zh) * 2005-12-07 2007-07-18 乐孜纯 聚甲基丙烯酸甲酯材料一维x射线折衍射微结构器件的制作方法
CN100345003C (zh) * 2005-12-07 2007-10-24 乐孜纯 铝材料一维x射线折衍射微结构器件的制作方法
CN100359341C (zh) * 2005-12-07 2008-01-02 乐孜纯 一维x射线折衍射微结构器件
US8208602B2 (en) * 2010-02-22 2012-06-26 General Electric Company High flux photon beams using optic devices
US8311184B2 (en) 2010-08-30 2012-11-13 General Electric Company Fan-shaped X-ray beam imaging systems employing graded multilayer optic devices
US8744048B2 (en) 2010-12-28 2014-06-03 General Electric Company Integrated X-ray source having a multilayer total internal reflection optic device
US8761346B2 (en) 2011-07-29 2014-06-24 General Electric Company Multilayer total internal reflection optic devices and methods of making and using the same
CN102798902A (zh) * 2012-07-23 2012-11-28 中国科学院长春光学精密机械与物理研究所 一种提高极紫外光谱纯度的新型多层膜
CN105873344A (zh) * 2016-03-22 2016-08-17 中国工程物理研究院流体物理研究所 一种基于横向梯度多层膜反射元件的x射线单能成像方法
CN113936839B (zh) * 2021-10-13 2022-06-10 哈尔滨工业大学 多层嵌套x射线聚焦镜主动力控制快速装调方法

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US3498694A (en) * 1966-09-23 1970-03-03 Stromberg Carlson Corp Optical interference filter means bombarded by crt beam for selectively passing monochromatic light
FR2296937A1 (fr) * 1974-12-31 1976-07-30 Ibm Cible a memoire deformographique couleur
US5016265A (en) * 1985-08-15 1991-05-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Variable magnification variable dispersion glancing incidence imaging x-ray spectroscopic telescope
US4798446A (en) * 1987-09-14 1989-01-17 The United States Of America As Represented By The United States Department Of Energy Aplanatic and quasi-aplanatic diffraction gratings
FR2681720A1 (fr) * 1991-09-25 1993-03-26 Philips Electronique Lab Dispositif incluant un miroir fonctionnant dans le domaine des rayons x ou des neutrons.
JPH05134385A (ja) * 1991-11-11 1993-05-28 Nikon Corp 反射マスク
US5458084A (en) * 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
JP3219502B2 (ja) * 1992-12-01 2001-10-15 キヤノン株式会社 反射型マスクとその製造方法、並びに露光装置と半導体デバイス製造方法
DE4407278A1 (de) * 1994-03-04 1995-09-07 Siemens Ag Röntgen-Analysegerät
US5646976A (en) * 1994-08-01 1997-07-08 Osmic, Inc. Optical element of multilayered thin film for X-rays and neutrons
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
JPH1073698A (ja) * 1996-08-30 1998-03-17 Nippon Telegr & Teleph Corp <Ntt> レーザプラズマx線用真空紫外分光器
FR2760889B1 (fr) * 1997-03-13 1999-07-30 Centre Nat Rech Scient Dispositif et procede de modulation d'un faisceau de rayons x
US6041099A (en) * 1998-02-19 2000-03-21 Osmic, Inc. Single corner kirkpatrick-baez beam conditioning optic assembly
JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法
US6317483B1 (en) * 1999-11-29 2001-11-13 X-Ray Optical Systems, Inc. Doubly curved optical device with graded atomic planes
DE10001291A1 (de) * 2000-01-14 2001-07-19 Zeiss Carl Adaptronischer Spiegel
US6829327B1 (en) * 2000-09-22 2004-12-07 X-Ray Optical Systems, Inc. Total-reflection x-ray fluorescence apparatus and method using a doubly-curved optic

Also Published As

Publication number Publication date
EP1395857A2 (de) 2004-03-10
EP1397813B1 (de) 2008-06-04
WO2002097486A3 (fr) 2003-12-18
JP2004529388A (ja) 2004-09-24
DE60226973D1 (de) 2008-07-17
AU2002344277A1 (en) 2002-12-09
WO2002097485A2 (fr) 2002-12-05
WO2002097485A3 (fr) 2003-03-20
WO2002097486A2 (fr) 2002-12-05
AU2002314278A1 (en) 2002-12-09
US20050094271A1 (en) 2005-05-05
EP1397813A2 (de) 2004-03-17

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