ATE393120T1 - Verfahren zum katalytischen wachsenlassen von nanoröhrchen oder nanofasern mit einer diffusionsbarriere aus nisi-legierung - Google Patents
Verfahren zum katalytischen wachsenlassen von nanoröhrchen oder nanofasern mit einer diffusionsbarriere aus nisi-legierungInfo
- Publication number
- ATE393120T1 ATE393120T1 AT02801094T AT02801094T ATE393120T1 AT E393120 T1 ATE393120 T1 AT E393120T1 AT 02801094 T AT02801094 T AT 02801094T AT 02801094 T AT02801094 T AT 02801094T AT E393120 T1 ATE393120 T1 AT E393120T1
- Authority
- AT
- Austria
- Prior art keywords
- nanofibers
- growth
- diffusion barrier
- alloy
- temperature
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- D—TEXTILES; PAPER
- D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
- D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
- D01F9/00—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments
- D01F9/08—Artificial filaments or the like of other substances; Manufacture thereof; Apparatus specially adapted for the manufacture of carbon filaments of inorganic material
- D01F9/12—Carbon filaments; Apparatus specially adapted for the manufacture thereof
- D01F9/127—Carbon filaments; Apparatus specially adapted for the manufacture thereof by thermal decomposition of hydrocarbon gases or vapours or other carbon-containing compounds in the form of gas or vapour, e.g. carbon monoxide, alcohols
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0115647A FR2832995B1 (fr) | 2001-12-04 | 2001-12-04 | Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE393120T1 true ATE393120T1 (de) | 2008-05-15 |
Family
ID=8870081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02801094T ATE393120T1 (de) | 2001-12-04 | 2002-12-03 | Verfahren zum katalytischen wachsenlassen von nanoröhrchen oder nanofasern mit einer diffusionsbarriere aus nisi-legierung |
Country Status (6)
Country | Link |
---|---|
US (1) | US7491269B2 (de) |
EP (1) | EP1451102B1 (de) |
AT (1) | ATE393120T1 (de) |
DE (1) | DE60226266T2 (de) |
FR (1) | FR2832995B1 (de) |
WO (1) | WO2003048040A1 (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002030816A1 (en) * | 2000-10-06 | 2002-04-18 | Fullerene International Corporation | Double-walled carbon nanotubes and methods for production and application |
FR2851737B1 (fr) * | 2003-02-28 | 2006-05-26 | Commissariat Energie Atomique | Catalyseur structure notamment pour la realisation d'ecrans plats a emission de champ |
US7067454B2 (en) * | 2003-04-09 | 2006-06-27 | Honeywell International Inc. | Low cost quick response catalyst system |
FR2856702B1 (fr) * | 2003-06-27 | 2005-09-09 | Centre Nat Rech Scient | Procede de synthese d'un materiau cristallin et materiau obtenu par ce procede |
US20050112048A1 (en) * | 2003-11-25 | 2005-05-26 | Loucas Tsakalakos | Elongated nano-structures and related devices |
US7276285B2 (en) * | 2003-12-31 | 2007-10-02 | Honeywell International Inc. | Nanotube fabrication basis |
FR2865946B1 (fr) * | 2004-02-09 | 2007-12-21 | Commissariat Energie Atomique | Procede de realisation d'une couche de materiau sur un support |
US7075093B2 (en) | 2004-05-12 | 2006-07-11 | Gorski Richard M | Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation |
TWI240312B (en) * | 2004-09-30 | 2005-09-21 | Univ Nat Cheng Kung | Method for rapidly fabricating aligned carbon nanotube under low temperature |
US8029186B2 (en) * | 2004-11-05 | 2011-10-04 | International Business Machines Corporation | Method for thermal characterization under non-uniform heat load |
FR2879342B1 (fr) * | 2004-12-15 | 2008-09-26 | Thales Sa | Cathode a emission de champ, a commande optique |
FR2886459B1 (fr) | 2005-05-31 | 2007-08-24 | Thales Sa | Reseau de transistors fet a nanotube ou nanofil semi-conducteur et dispositif electronique correspondant, pour la detection d'analytes |
CN100482581C (zh) * | 2005-06-17 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | 一种碳纳米管制造方法 |
FR2897204B1 (fr) * | 2006-02-07 | 2008-05-30 | Ecole Polytechnique Etablissem | Structure de transistor vertical et procede de fabrication |
FR2909801B1 (fr) * | 2006-12-08 | 2009-01-30 | Thales Sa | Tube electronique a cathode froide |
US20100304061A1 (en) * | 2009-05-26 | 2010-12-02 | Zena Technologies, Inc. | Fabrication of high aspect ratio features in a glass layer by etching |
US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8546742B2 (en) * | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US8735797B2 (en) * | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US20110115041A1 (en) * | 2009-11-19 | 2011-05-19 | Zena Technologies, Inc. | Nanowire core-shell light pipes |
US8791470B2 (en) * | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8889455B2 (en) * | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8211737B2 (en) | 2008-09-19 | 2012-07-03 | The University Of Massachusetts | Method of producing nanopatterned articles, and articles produced thereby |
US8247033B2 (en) | 2008-09-19 | 2012-08-21 | The University Of Massachusetts | Self-assembly of block copolymers on topographically patterned polymeric substrates |
US8518837B2 (en) | 2008-09-25 | 2013-08-27 | The University Of Massachusetts | Method of producing nanopatterned articles using surface-reconstructed block copolymer films |
US9156682B2 (en) | 2011-05-25 | 2015-10-13 | The University Of Massachusetts | Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles |
TWI615917B (zh) * | 2015-04-27 | 2018-02-21 | Sumco股份有限公司 | 承托器及磊晶生長裝置 |
Family Cites Families (20)
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FR2542500B1 (fr) * | 1983-03-11 | 1986-08-29 | Thomson Csf | Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant |
FR2626409B1 (fr) * | 1988-01-22 | 1991-09-06 | Thomson Csf | Dispositif en materiau supraconducteur et procede de realisation |
EP0365630B1 (de) * | 1988-03-25 | 1994-03-02 | Thomson-Csf | Herstellungsverfahren von feldemissions-elektronenquellen und anwendung zur herstellung von emitter-matrizen |
FR2629636B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
FR2629637B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
FR2645345A1 (fr) * | 1989-03-31 | 1990-10-05 | Thomson Csf | Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants |
FR2658839B1 (fr) * | 1990-02-23 | 1997-06-20 | Thomson Csf | Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes. |
FR2666172B1 (fr) * | 1990-08-24 | 1997-05-16 | Thomson Csf | Transistor de puissance et procede de realisation. |
FR2667617B1 (fr) * | 1990-10-09 | 1992-11-27 | Thomson Csf | Procede de croissance de couches heteroepitaxiales. |
FR2669465B1 (fr) * | 1990-11-16 | 1996-07-12 | Thomson Rech | Source d'electrons et procede de realisation. |
FR2682128B1 (fr) * | 1991-10-08 | 1993-12-03 | Thomson Csf | Procede de croissance de couches heteroepitaxiales. |
FR2689680B1 (fr) * | 1992-04-02 | 2001-08-10 | Thomson Csf | Procédé de réalisation de couches minces hétéroépitaxiales et de dispositifs électroniques. |
JP3484441B2 (ja) * | 1999-04-21 | 2004-01-06 | 震 張 | 炭素ナノチューブの製造方法 |
EP1059266A3 (de) * | 1999-06-11 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Massensyntheseverfahren von hochreinen, auf einem grossformatigem Substrat angeordnete Kohlenstoffnanoröhren mittels thermischer chemischer Dampfphasenabscheidung |
KR100376197B1 (ko) * | 1999-06-15 | 2003-03-15 | 일진나노텍 주식회사 | 탄소 소오스 가스 분해용 촉매금속막을 이용한탄소나노튜브의 저온 합성 방법 |
EP1129990A1 (de) * | 2000-02-25 | 2001-09-05 | Lucent Technologies Inc. | Verfahren zum kontrolliertem Wachstum von Kohlenstoffnanoröhren |
US6596187B2 (en) * | 2001-08-29 | 2003-07-22 | Motorola, Inc. | Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth |
US6982519B2 (en) * | 2001-09-18 | 2006-01-03 | Ut-Battelle Llc | Individually electrically addressable vertically aligned carbon nanofibers on insulating substrates |
FR2829873B1 (fr) * | 2001-09-20 | 2006-09-01 | Thales Sa | Procede de croissance localisee de nanotubes et procede de fabrication de cathode autoalignee utilisant le procede de croissance de nanotubes |
JP2006108210A (ja) * | 2004-10-01 | 2006-04-20 | Fujitsu Ltd | 配線接続構造およびその形成方法 |
-
2001
- 2001-12-04 FR FR0115647A patent/FR2832995B1/fr not_active Expired - Fee Related
-
2002
- 2002-12-03 US US10/497,079 patent/US7491269B2/en not_active Expired - Fee Related
- 2002-12-03 AT AT02801094T patent/ATE393120T1/de not_active IP Right Cessation
- 2002-12-03 DE DE60226266T patent/DE60226266T2/de not_active Expired - Lifetime
- 2002-12-03 EP EP02801094A patent/EP1451102B1/de not_active Expired - Lifetime
- 2002-12-03 WO PCT/FR2002/004155 patent/WO2003048040A1/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2832995A1 (fr) | 2003-06-06 |
US20050235906A1 (en) | 2005-10-27 |
EP1451102A1 (de) | 2004-09-01 |
DE60226266T2 (de) | 2009-03-12 |
EP1451102B1 (de) | 2008-04-23 |
WO2003048040A1 (fr) | 2003-06-12 |
US7491269B2 (en) | 2009-02-17 |
DE60226266D1 (de) | 2008-06-05 |
FR2832995B1 (fr) | 2004-02-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |