DE60040273D1 - LED mit kontrollierter Sauerstoffdotierung und einer dünnen, mehrere Quantentöpfe umfassenden, aktiven Schicht - Google Patents

LED mit kontrollierter Sauerstoffdotierung und einer dünnen, mehrere Quantentöpfe umfassenden, aktiven Schicht

Info

Publication number
DE60040273D1
DE60040273D1 DE60040273T DE60040273T DE60040273D1 DE 60040273 D1 DE60040273 D1 DE 60040273D1 DE 60040273 T DE60040273 T DE 60040273T DE 60040273 T DE60040273 T DE 60040273T DE 60040273 D1 DE60040273 D1 DE 60040273D1
Authority
DE
Germany
Prior art keywords
led
thin
active layer
quantum well
oxygen doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60040273T
Other languages
English (en)
Inventor
Patrick N Grillot
Eugene I Chen
Jen-Wu Huang
Stephen A Stockman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Application granted granted Critical
Publication of DE60040273D1 publication Critical patent/DE60040273D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
DE60040273T 1999-12-21 2000-12-08 LED mit kontrollierter Sauerstoffdotierung und einer dünnen, mehrere Quantentöpfe umfassenden, aktiven Schicht Expired - Fee Related DE60040273D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/467,941 US6469314B1 (en) 1999-12-21 1999-12-21 Thin multi-well active layer LED with controlled oxygen doping
PCT/US2000/033287 WO2001047035A1 (en) 1999-12-21 2000-12-08 Thin multi-well active layer led with controlled o doping

Publications (1)

Publication Number Publication Date
DE60040273D1 true DE60040273D1 (de) 2008-10-30

Family

ID=23857780

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040273T Expired - Fee Related DE60040273D1 (de) 1999-12-21 2000-12-08 LED mit kontrollierter Sauerstoffdotierung und einer dünnen, mehrere Quantentöpfe umfassenden, aktiven Schicht

Country Status (7)

Country Link
US (1) US6469314B1 (de)
EP (1) EP1157428B1 (de)
JP (1) JP2001244502A (de)
KR (1) KR100810823B1 (de)
AU (1) AU2072801A (de)
DE (1) DE60040273D1 (de)
WO (1) WO2001047035A1 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004027126A1 (ja) * 2002-09-20 2004-04-01 Mitsubishi Chemical Corporation Ｉｉｉ−ｖ族化合物半導体結晶
JP3857295B2 (ja) 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子
KR100682256B1 (ko) 2005-07-14 2007-02-15 엘지전자 주식회사 발광 다이오드 및 그 제조방법
US8118447B2 (en) 2007-12-20 2012-02-21 Altair Engineering, Inc. LED lighting apparatus with swivel connection
US8360599B2 (en) 2008-05-23 2013-01-29 Ilumisys, Inc. Electric shock resistant L.E.D. based light
US7946729B2 (en) 2008-07-31 2011-05-24 Altair Engineering, Inc. Fluorescent tube replacement having longitudinally oriented LEDs
US7938562B2 (en) 2008-10-24 2011-05-10 Altair Engineering, Inc. Lighting including integral communication apparatus
US8653984B2 (en) 2008-10-24 2014-02-18 Ilumisys, Inc. Integration of LED lighting control with emergency notification systems
US8324817B2 (en) 2008-10-24 2012-12-04 Ilumisys, Inc. Light and light sensor
US8444292B2 (en) 2008-10-24 2013-05-21 Ilumisys, Inc. End cap substitute for LED-based tube replacement light
US8214084B2 (en) 2008-10-24 2012-07-03 Ilumisys, Inc. Integration of LED lighting with building controls
US8901823B2 (en) 2008-10-24 2014-12-02 Ilumisys, Inc. Light and light sensor
US8556452B2 (en) 2009-01-15 2013-10-15 Ilumisys, Inc. LED lens
US8362710B2 (en) 2009-01-21 2013-01-29 Ilumisys, Inc. Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays
US8664880B2 (en) 2009-01-21 2014-03-04 Ilumisys, Inc. Ballast/line detection circuit for fluorescent replacement lamps
JP5407359B2 (ja) * 2009-01-23 2014-02-05 信越半導体株式会社 発光ダイオード
US8330381B2 (en) 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
JP2010272790A (ja) * 2009-05-25 2010-12-02 Shin Etsu Handotai Co Ltd 活性キャリア濃度の評価方法並びに発光素子及び発光素子の製造方法
US8299695B2 (en) 2009-06-02 2012-10-30 Ilumisys, Inc. Screw-in LED bulb comprising a base having outwardly projecting nodes
WO2011005579A2 (en) 2009-06-23 2011-01-13 Altair Engineering, Inc. Illumination device including leds and a switching power control system
EP2553320A4 (de) 2010-03-26 2014-06-18 Ilumisys Inc Led-licht mit thermoelektrischem generator
US8540401B2 (en) 2010-03-26 2013-09-24 Ilumisys, Inc. LED bulb with internal heat dissipating structures
WO2011119907A2 (en) 2010-03-26 2011-09-29 Altair Engineering, Inc. Led light tube with dual sided light distribution
US8454193B2 (en) 2010-07-08 2013-06-04 Ilumisys, Inc. Independent modules for LED fluorescent light tube replacement
US8596813B2 (en) 2010-07-12 2013-12-03 Ilumisys, Inc. Circuit board mount for LED light tube
JP5801542B2 (ja) 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
US8523394B2 (en) 2010-10-29 2013-09-03 Ilumisys, Inc. Mechanisms for reducing risk of shock during installation of light tube
US8870415B2 (en) 2010-12-09 2014-10-28 Ilumisys, Inc. LED fluorescent tube replacement light with reduced shock hazard
US9072171B2 (en) 2011-08-24 2015-06-30 Ilumisys, Inc. Circuit board mount for LED light
WO2013131002A1 (en) 2012-03-02 2013-09-06 Ilumisys, Inc. Electrical connector header for an led-based light
US9163794B2 (en) 2012-07-06 2015-10-20 Ilumisys, Inc. Power supply assembly for LED-based light tube
US9271367B2 (en) 2012-07-09 2016-02-23 Ilumisys, Inc. System and method for controlling operation of an LED-based light
US9285084B2 (en) 2013-03-14 2016-03-15 Ilumisys, Inc. Diffusers for LED-based lights
US9267650B2 (en) 2013-10-09 2016-02-23 Ilumisys, Inc. Lens for an LED-based light
EP3097748A1 (de) 2014-01-22 2016-11-30 iLumisys, Inc. Beleuchtung auf led-basis mit adressierten leds
KR102098937B1 (ko) * 2014-01-27 2020-04-08 엘지이노텍 주식회사 발광소자
TWI613838B (zh) * 2014-03-06 2018-02-01 晶元光電股份有限公司 發光元件
US9510400B2 (en) 2014-05-13 2016-11-29 Ilumisys, Inc. User input systems for an LED-based light
CN104269476A (zh) * 2014-09-30 2015-01-07 扬州乾照光电有限公司 一种掺杂超晶格结构的黄绿光led及其生产工艺
US9306115B1 (en) * 2015-02-10 2016-04-05 Epistar Corporation Light-emitting device
US10161568B2 (en) 2015-06-01 2018-12-25 Ilumisys, Inc. LED-based light with canted outer walls
JP7385901B2 (ja) 2019-09-17 2023-11-24 東西電工株式会社 自然環境保護と防災のための特殊照明機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69132934T2 (de) * 1990-05-23 2002-08-29 Uniphase Opto Holdings Inc Strahlungsemittierende Halbleiteranordnung und Verfahren zum Herstellen derselben
JP3373561B2 (ja) 1992-09-30 2003-02-04 株式会社東芝 発光ダイオード
EP0723322B1 (de) * 1995-01-20 2000-10-11 Matsushita Electric Industrial Co., Ltd. Lichtemittierende Halbleitervorrichtung und Herstellungsverfahren
TW319916B (de) 1995-06-05 1997-11-11 Hewlett Packard Co
DE19524655A1 (de) 1995-07-06 1997-01-09 Huang Kuo Hsin LED-Struktur
US5780867A (en) * 1996-03-07 1998-07-14 Sandia Corporation Broadband light-emitting diode
JP2817710B2 (ja) * 1996-06-10 1998-10-30 日本電気株式会社 半導体レーザ
JP3643665B2 (ja) * 1996-12-20 2005-04-27 シャープ株式会社 半導体発光素子
US6057562A (en) * 1997-04-18 2000-05-02 Epistar Corp. High efficiency light emitting diode with distributed Bragg reflector
US6181723B1 (en) * 1997-05-07 2001-01-30 Sharp Kabushiki Kaisha Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same
US20010020703A1 (en) * 1998-07-24 2001-09-13 Nathan F. Gardner Algainp light emitting devices with thin active layers

Also Published As

Publication number Publication date
EP1157428B1 (de) 2008-09-17
KR20010114210A (ko) 2001-12-31
AU2072801A (en) 2001-07-03
JP2001244502A (ja) 2001-09-07
US6469314B1 (en) 2002-10-22
KR100810823B1 (ko) 2008-03-06
EP1157428A1 (de) 2001-11-28
WO2001047035A1 (en) 2001-06-28

Similar Documents

Publication Publication Date Title
DE60040273D1 (de) LED mit kontrollierter Sauerstoffdotierung und einer dünnen, mehrere Quantentöpfe umfassenden, aktiven Schicht
DE69721259D1 (de) Absorbierender artikel mit einer zusammengesetzten, atmungsfähigen, äusseren schicht
DE10085305T1 (de) Brennstoffzelle mit einer hydrophilen Substratschicht
DE60032668D1 (de) Elektrolumineszente Vorrichtung mit einer sehr dünnen Emissionsschicht
DE60040526D1 (de) Lichtemittierende iii-nitrid halbleitervorrichtung mit erhöhter lichterzeugung
DE69917020D1 (de) Substrat mit photokatalytischer beschichtung
DE69507437T2 (de) Lichtemittierende diode mit einer aktiven schicht aus 2,5-substituiertem poly( p-phenylen-vinylen)
DE60035127D1 (de) Mit polysacchariden beschichtete träger, deren herstellung und verwendung
DE60020297D1 (de) Saugfähiger Gegenstand mit strukturierter Oberfläche
DE59908336D1 (de) Hubvorrichtung (Palettierer) mit Schwenkarm
DE69929401D1 (de) Absorbierender Artikel mit Kissenlage
DE69406049T2 (de) Lichtmittierende Halbleitervorrichtung mit einer dritten Begrenzungsschicht
DE60132098D1 (de) Behandeltes substrat mit verbesserter topischer applikationsübertragungsfähigkeit
DE60140617D1 (de) Polykristalliner diamant mit einer an katalysatormaterial abgereicherten oberfläche
DE69937091D1 (de) LED mit fluoreszierendem Substrat
DE69932848D1 (de) Absorbierender artikel mit einer dochtverzögerungsschicht mit verbesserter flüssigkeitshandhabung
ATE264630T1 (de) Wiederverschliessbarer reissverschluss mit einer schmelzbaren schicht
MXPA02011663A (es) Sustrato con superficie ultrafobica, de dispersion de luz reducida y metodo para la produccion del mismo.
DE60137339D1 (de) Absorbierender artikel mit elastischer, äusserer schicht
WO2000002090A3 (en) Periodic porous and relief nanostructured articles
DE60016644D1 (de) Mit aufgeschmolzenen Fluoropolymeren beschichtete Polytetrafluoroethylenformkörper
GB9917437D0 (en) AlGaInP light emitting devices with thin active layers
ATE223186T1 (de) Absorbierender artikel mit atmungsfähiger, äusserer schicht
DE69905973T2 (de) Entpalettiervorrichtung mit Kollektorband.
IL136758A0 (en) Silicon with structured oxygen doping, its production and use

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee