ATE388418T1 - Mindestens zweischichtiges substrat für die mikrolithographie - Google Patents
Mindestens zweischichtiges substrat für die mikrolithographieInfo
- Publication number
- ATE388418T1 ATE388418T1 AT03017422T AT03017422T ATE388418T1 AT E388418 T1 ATE388418 T1 AT E388418T1 AT 03017422 T AT03017422 T AT 03017422T AT 03017422 T AT03017422 T AT 03017422T AT E388418 T1 ATE388418 T1 AT E388418T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- plasma
- substrate
- radiation
- microlithography
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000001393 microlithography Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 239000002241 glass-ceramic Substances 0.000 abstract 1
- 239000002346 layers by function Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Glass Compositions (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10235731 | 2002-08-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE388418T1 true ATE388418T1 (de) | 2008-03-15 |
Family
ID=30010603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03017422T ATE388418T1 (de) | 2002-08-02 | 2003-08-01 | Mindestens zweischichtiges substrat für die mikrolithographie |
Country Status (6)
Country | Link |
---|---|
US (1) | US7129010B2 (zh) |
EP (1) | EP1387189B1 (zh) |
JP (1) | JP4401125B2 (zh) |
CN (1) | CN100549818C (zh) |
AT (1) | ATE388418T1 (zh) |
DE (1) | DE50309295D1 (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835503B2 (en) * | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
DE10302342A1 (de) * | 2003-01-17 | 2004-08-05 | Schott Glas | Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür |
JP4792706B2 (ja) * | 2003-04-03 | 2011-10-12 | 旭硝子株式会社 | TiO2を含有するシリカガラスおよびその製造方法 |
US7193228B2 (en) * | 2004-03-10 | 2007-03-20 | Cymer, Inc. | EUV light source optical elements |
DE102004015580B3 (de) * | 2004-03-30 | 2005-07-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Strahlformung und/oder Strahlumlenkung von EUV-Strahlung |
SG124407A1 (en) * | 2005-02-03 | 2006-08-30 | Asml Netherlands Bv | Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus |
DE102005027697A1 (de) * | 2005-06-15 | 2006-12-28 | Infineon Technologies Ag | EUV-Reflexionsmaske und Verfahren zu deren Herstellung |
FR2894691B1 (fr) * | 2005-12-13 | 2008-01-18 | Commissariat Energie Atomique | Procede de fabrication de masque lithographique en reflexion et masque issu du procede |
JP4826742B2 (ja) * | 2006-01-05 | 2011-11-30 | 旭硝子株式会社 | 薄膜デバイスの成膜方法 |
US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
US7712333B2 (en) * | 2006-03-29 | 2010-05-11 | Asahi Glass Company, Limited | Method for smoothing a surface of a glass substrate for a reflective mask blank used in EUV lithography |
US20080266651A1 (en) * | 2007-04-24 | 2008-10-30 | Katsuhiko Murakami | Optical apparatus, multilayer-film reflective mirror, exposure apparatus, and device |
WO2009024181A1 (en) * | 2007-08-20 | 2009-02-26 | Optosic Ag | Method of manufacturing and processing silicon carbide scanning mirrors |
DE102008040964B4 (de) * | 2008-08-04 | 2010-07-15 | Carl Zeiss Smt Ag | Entfernen reflektierender Schichten von EUV-Spiegeln |
CN102132209B (zh) * | 2008-08-21 | 2014-07-16 | Asml控股股份有限公司 | 具有高热传导率的euv掩模版基底 |
WO2011073157A1 (en) | 2009-12-15 | 2011-06-23 | Carl Zeiss Smt Gmbh | Reflective optical element for euv lithography |
DE102009054653A1 (de) * | 2009-12-15 | 2011-06-16 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Substrat für einen solchen Spiegel, Verwendung einer Quarzschicht für ein solches Substrat, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel oder einem solchen Substrat und Projetktionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
DE102010029570A1 (de) * | 2010-06-01 | 2011-12-01 | Carl Zeiss Smt Gmbh | Substrat für optische Elemente |
DE102010039927A1 (de) | 2010-08-30 | 2012-03-01 | Carl Zeiss Smt Gmbh | Substrat für Spiegel für die EUV-Lithographie |
DE102011015141A1 (de) | 2011-03-16 | 2012-09-20 | Carl Zeiss Laser Optics Gmbh | Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement |
DE102011080635A1 (de) * | 2011-08-09 | 2013-02-14 | Carl Zeiss Smt Gmbh | Verfahren zum Verbinden von Komponenten und Verbundstruktur |
DE102011083464A1 (de) * | 2011-09-27 | 2012-08-30 | Carl Zeiss Smt Gmbh | Spiegel für euv-mikrolithographie und verfahren zu seiner herstellung |
KR101993322B1 (ko) | 2011-09-28 | 2019-06-26 | 호야 가부시키가이샤 | 마스크블랭크용 유리기판, 다층 반사막 부착 기판, 마스크블랭크 및 마스크, 그리고 그것들의 제조방법 |
DE102011085358B3 (de) * | 2011-10-28 | 2012-07-12 | Carl Zeiss Smt Gmbh | Optische Anordnung für die EUV-Lithographie und Verfahren zum Konfigurieren einer solchen optischen Anordnung |
DE102012201075A1 (de) * | 2012-01-25 | 2013-07-25 | Carl Zeiss Smt Gmbh | Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Konfigurieren einer optischen Anordnung |
JP2014093385A (ja) * | 2012-11-02 | 2014-05-19 | Fujifilm Corp | インプリント用密着膜の製造方法およびパターン形成方法 |
US20140272684A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9411222B2 (en) * | 2014-04-02 | 2016-08-09 | Zygo Corporation | Photo-masks for lithography |
DE102016207307A1 (de) * | 2016-04-28 | 2017-11-02 | Carl Zeiss Smt Gmbh | Optisches Element und optische Anordnung damit |
DE102016210794A1 (de) | 2016-06-16 | 2017-04-27 | Carl Zeiss Smt Gmbh | Optische Anordnung, EUV-Lithographieanlage und Verfahren zum Betrieb der optischen Anordnung |
DE102018111144A1 (de) * | 2017-05-26 | 2018-11-29 | Schott Ag | Präzisionskomponente |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6808826A (zh) * | 1967-07-01 | 1969-01-03 | ||
DE1902432B2 (de) | 1967-07-01 | 1976-10-14 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Transparente glaskeramiken mit einem thermischen ausdehnungskoeffizienten von 0 + 1,5 mal 10 hoch -7 /grad c der im bereich von -30 bis + 70 grad c wenig temperaturabhaengig ist |
FR1559810A (zh) | 1968-01-19 | 1969-03-14 | ||
FR2564823B1 (fr) * | 1984-05-23 | 1991-08-23 | Schott Glaswerke | Materiau vitroceramique ayant un comportement specifique en dilatation thermique |
US4865451A (en) * | 1986-12-22 | 1989-09-12 | Ahonen Robert G | Silicon substrate mirror assembly for lasers |
US4904083A (en) * | 1987-09-11 | 1990-02-27 | Litton Systems, Inc. | Partially transparent mirror for a ring laser |
JP2668057B2 (ja) * | 1994-09-13 | 1997-10-27 | 株式会社オハラ | 低膨張透明ガラスセラミックス |
US5673571A (en) | 1996-03-06 | 1997-10-07 | Manley; David B. | Deethanizer/depropanizer sequences with thermal and thermo-mechanical coupling and component distribution |
DE19830449A1 (de) | 1998-07-08 | 2000-01-27 | Zeiss Carl Fa | SiO¶2¶-beschichtetes Spiegelsubstrat für EUV |
US6159643A (en) * | 1999-03-01 | 2000-12-12 | Advanced Micro Devices, Inc. | Extreme ultraviolet lithography reflective mask |
KR100805360B1 (ko) * | 1999-06-07 | 2008-02-20 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 코팅층을 갖는 반사 마스크 기판 |
KR100647968B1 (ko) | 1999-07-22 | 2006-11-17 | 코닝 인코포레이티드 | 극 자외선 소프트 x-선 투사 리소그라피 방법 및 마스크디바이스 |
US6931097B1 (en) | 1999-07-22 | 2005-08-16 | Corning Incorporated | Extreme ultraviolet soft x-ray projection lithographic method system and lithographic elements |
US6387572B1 (en) * | 1999-09-13 | 2002-05-14 | Intel Corporation | Low CTE substrate for reflective EUV lithography |
DE10127086A1 (de) | 2001-06-02 | 2002-12-05 | Zeiss Carl | Vorrichtung zur Reflexion von elektromagnetischen Wellen |
US6835503B2 (en) * | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
-
2003
- 2003-07-25 US US10/628,059 patent/US7129010B2/en not_active Expired - Lifetime
- 2003-07-31 JP JP2003283612A patent/JP4401125B2/ja not_active Expired - Lifetime
- 2003-08-01 DE DE50309295T patent/DE50309295D1/de not_active Expired - Lifetime
- 2003-08-01 AT AT03017422T patent/ATE388418T1/de not_active IP Right Cessation
- 2003-08-01 EP EP03017422A patent/EP1387189B1/de not_active Expired - Lifetime
- 2003-08-02 CN CNB031555144A patent/CN100549818C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1387189B1 (de) | 2008-03-05 |
US7129010B2 (en) | 2006-10-31 |
JP2004165629A (ja) | 2004-06-10 |
EP1387189A2 (de) | 2004-02-04 |
JP4401125B2 (ja) | 2010-01-20 |
CN1488994A (zh) | 2004-04-14 |
EP1387189A3 (de) | 2004-10-06 |
CN100549818C (zh) | 2009-10-14 |
DE50309295D1 (de) | 2008-04-17 |
US20040063004A1 (en) | 2004-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |