ATE376252T1 - Mischungen von metallsiloxiden als einzige quelle - Google Patents
Mischungen von metallsiloxiden als einzige quelleInfo
- Publication number
- ATE376252T1 ATE376252T1 AT03018791T AT03018791T ATE376252T1 AT E376252 T1 ATE376252 T1 AT E376252T1 AT 03018791 T AT03018791 T AT 03018791T AT 03018791 T AT03018791 T AT 03018791T AT E376252 T1 ATE376252 T1 AT E376252T1
- Authority
- AT
- Austria
- Prior art keywords
- metal
- valence
- ligand
- mixtures
- sir1
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 5
- 239000003446 ligand Substances 0.000 abstract 3
- 125000005374 siloxide group Chemical group 0.000 abstract 2
- 229910013500 M-O—Si Inorganic materials 0.000 abstract 1
- 229910014299 N-Si Inorganic materials 0.000 abstract 1
- 125000000129 anionic group Chemical group 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052914 metal silicate Inorganic materials 0.000 abstract 1
- 125000000962 organic group Chemical group 0.000 abstract 1
- 239000013110 organic ligand Substances 0.000 abstract 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/232,052 US7033560B2 (en) | 2002-08-30 | 2002-08-30 | Single source mixtures of metal siloxides |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE376252T1 true ATE376252T1 (de) | 2007-11-15 |
Family
ID=31976895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03018791T ATE376252T1 (de) | 2002-08-30 | 2003-08-28 | Mischungen von metallsiloxiden als einzige quelle |
Country Status (10)
Country | Link |
---|---|
US (1) | US7033560B2 (de) |
EP (1) | EP1432018B1 (de) |
JP (1) | JP2004131485A (de) |
KR (1) | KR100666974B1 (de) |
CN (1) | CN1279210C (de) |
AT (1) | ATE376252T1 (de) |
DE (1) | DE60316903T2 (de) |
IL (1) | IL157559A (de) |
SG (1) | SG129251A1 (de) |
TW (1) | TW200403186A (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7603657B2 (en) * | 2001-03-02 | 2009-10-13 | Oracle International Corporation | Customization of client-server interaction in an internet application |
JP4244322B2 (ja) * | 2003-01-08 | 2009-03-25 | 日東化成株式会社 | ハフニウム化合物、該ハフニウム化合物からなる硬化触媒、該硬化触媒を含有する湿気硬化型オルガノポリシロキサン組成物 |
US7563727B2 (en) * | 2004-11-08 | 2009-07-21 | Intel Corporation | Low-k dielectric layer formed from aluminosilicate precursors |
KR100618879B1 (ko) | 2004-12-27 | 2006-09-01 | 삼성전자주식회사 | 게르마늄 전구체, 이를 이용하여 형성된 gst 박막,상기 박막의 제조 방법 및 상변화 메모리 소자 |
FR2890073A1 (fr) * | 2005-08-23 | 2007-03-02 | Air Liquide | Precurseurs organometalliques pour le depot d'un film de carbure ou de carbo-nitrure de tantale et procede de depot de tel film |
US10011903B2 (en) * | 2015-12-31 | 2018-07-03 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Manganese-containing film forming compositions, their synthesis, and use in film deposition |
US9738971B2 (en) * | 2015-12-31 | 2017-08-22 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Vapor deposition methods to form group 8-containing films |
TW201812071A (zh) * | 2016-06-13 | 2018-04-01 | 應用材料股份有限公司 | 用於沉積鑭、氧化鑭及氮化鑭薄膜之鑭前驅物 |
US10407347B2 (en) | 2016-10-27 | 2019-09-10 | National Technology & Engineering Solutions Of Sandia, Llc | Single-source synthesis of ceramic oxide nanoparticles |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1428108A (en) * | 1972-05-15 | 1976-03-17 | Ici Ltd | Organo-metallic compounds |
US4478952A (en) * | 1983-03-18 | 1984-10-23 | E. I. Du Pont De Nemours And Company | Supported catalyst for olefin polymerization |
US5017695A (en) * | 1987-12-03 | 1991-05-21 | Rhone-Poulenc, Inc. | Ceric hydrocarbyl silyloxides and process for their preparation |
DE69117982T2 (de) * | 1990-12-27 | 1996-08-08 | Exxon Chemical Patents Inc | Übergangsmetall-amidoverbindung und katalysatorsystem zur herstellung von isotaktischem propylen |
JPH0812718A (ja) * | 1994-06-28 | 1996-01-16 | Nippon Oil Co Ltd | オレフィン類重合用触媒成分 |
US5536857A (en) * | 1994-07-05 | 1996-07-16 | Ford Motor Company | Single source volatile precursor for SiO2.TiO2 powders and films |
JPH11292890A (ja) * | 1998-04-03 | 1999-10-26 | Kanto Chem Co Inc | 新規な有機遷移金属化合物 |
US6238734B1 (en) * | 1999-07-08 | 2001-05-29 | Air Products And Chemicals, Inc. | Liquid precursor mixtures for deposition of multicomponent metal containing materials |
US6399208B1 (en) | 1999-10-07 | 2002-06-04 | Advanced Technology Materials Inc. | Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films |
US6476245B1 (en) * | 2000-07-26 | 2002-11-05 | The Governors Of The University Of Alberta | Phosphinimine methanide transition metal catalysts |
US6524967B1 (en) * | 2000-08-01 | 2003-02-25 | Motorola, Inc. | Method for incorporating nitrogen into a dielectric layer using a special precursor |
JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
US7005392B2 (en) | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US20030104209A1 (en) * | 2001-11-30 | 2003-06-05 | Bellman Robert A. | Precursor and method of growing doped glass films |
-
2002
- 2002-08-30 US US10/232,052 patent/US7033560B2/en not_active Expired - Lifetime
-
2003
- 2003-07-31 SG SG200304283A patent/SG129251A1/en unknown
- 2003-08-25 IL IL157559A patent/IL157559A/en not_active IP Right Cessation
- 2003-08-27 KR KR1020030059439A patent/KR100666974B1/ko not_active IP Right Cessation
- 2003-08-27 JP JP2003302644A patent/JP2004131485A/ja active Pending
- 2003-08-28 EP EP03018791A patent/EP1432018B1/de not_active Expired - Lifetime
- 2003-08-28 TW TW092123835A patent/TW200403186A/zh unknown
- 2003-08-28 DE DE60316903T patent/DE60316903T2/de not_active Expired - Fee Related
- 2003-08-28 AT AT03018791T patent/ATE376252T1/de not_active IP Right Cessation
- 2003-08-29 CN CNB031556310A patent/CN1279210C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2004131485A (ja) | 2004-04-30 |
CN1279210C (zh) | 2006-10-11 |
IL157559A (en) | 2008-11-26 |
DE60316903T2 (de) | 2008-07-24 |
EP1432018B1 (de) | 2007-10-17 |
IL157559A0 (en) | 2004-03-28 |
TW200403186A (en) | 2004-03-01 |
US7033560B2 (en) | 2006-04-25 |
EP1432018A1 (de) | 2004-06-23 |
CN1492073A (zh) | 2004-04-28 |
DE60316903D1 (de) | 2007-11-29 |
SG129251A1 (en) | 2007-02-26 |
US20040044163A1 (en) | 2004-03-04 |
KR20040019945A (ko) | 2004-03-06 |
KR100666974B1 (ko) | 2007-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |