ATE371955T1 - Igbt mit pn-isolation - Google Patents

Igbt mit pn-isolation

Info

Publication number
ATE371955T1
ATE371955T1 AT00908964T AT00908964T ATE371955T1 AT E371955 T1 ATE371955 T1 AT E371955T1 AT 00908964 T AT00908964 T AT 00908964T AT 00908964 T AT00908964 T AT 00908964T AT E371955 T1 ATE371955 T1 AT E371955T1
Authority
AT
Austria
Prior art keywords
conductivity
igbt
zone
isolation
semiconductor substrate
Prior art date
Application number
AT00908964T
Other languages
German (de)
English (en)
Inventor
Wolfgang Werner
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE371955T1 publication Critical patent/ATE371955T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT00908964T 1999-02-16 2000-02-01 Igbt mit pn-isolation ATE371955T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19906384A DE19906384A1 (de) 1999-02-16 1999-02-16 IGBT mit PN-Isolation

Publications (1)

Publication Number Publication Date
ATE371955T1 true ATE371955T1 (de) 2007-09-15

Family

ID=7897629

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00908964T ATE371955T1 (de) 1999-02-16 2000-02-01 Igbt mit pn-isolation

Country Status (6)

Country Link
US (1) US6914270B2 (ja)
EP (1) EP1157425B1 (ja)
JP (1) JP3827954B2 (ja)
AT (1) ATE371955T1 (ja)
DE (2) DE19906384A1 (ja)
WO (1) WO2000049662A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10202274B4 (de) * 2002-01-22 2012-12-27 Infineon Technologies Ag Integrierte Halbleiterschaltungsanordnung
CN100573907C (zh) 2004-05-27 2009-12-23 佛文恩股份有限公司 垂直滤色片传感器组及其制造所用的半导体集成电路制造方法
US20080128762A1 (en) * 2006-10-31 2008-06-05 Vora Madhukar B Junction isolated poly-silicon gate JFET
US8288235B2 (en) * 2010-10-20 2012-10-16 Globalfoundries Singapore Pte. Ltd. Self-aligned body fully isolated device
TWI469342B (zh) * 2012-12-07 2015-01-11 Macronix Int Co Ltd 半導體結構及其操作方法
US9041142B2 (en) * 2012-12-11 2015-05-26 Macronix International Co., Ltd. Semiconductor device and operating method for the same
CN103872112B (zh) * 2012-12-12 2016-08-10 旺宏电子股份有限公司 半导体结构及其操作方法
TWI509792B (zh) * 2013-07-24 2015-11-21 Macronix Int Co Ltd 半導體裝置及其操作方法
US8952744B1 (en) * 2013-07-31 2015-02-10 Macronix International Co., Ltd. Semiconductor device and operating method for the same
TWI557878B (zh) * 2013-12-16 2016-11-11 旺宏電子股份有限公司 半導體元件及其製造方法
CN111162122B (zh) * 2019-12-23 2023-02-24 广东美的白色家电技术创新中心有限公司 一种横向功率器件

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE148546C (ja)
US3430110A (en) * 1965-12-02 1969-02-25 Rca Corp Monolithic integrated circuits with a plurality of isolation zones
DD148546A1 (de) * 1980-01-09 1981-05-27 Dietrich Armgarth Doppelepitaxieverfahren zur herstellung von unipolaren und bipolaren halbleiterstrukturen
EP0111803B1 (en) * 1982-12-13 1989-03-01 General Electric Company Lateral insulated-gate rectifier structures
JPH03245562A (ja) * 1983-04-19 1991-11-01 Sanken Electric Co Ltd 半導体集積回路
JPS6381861A (ja) * 1986-09-25 1988-04-12 Mitsubishi Electric Corp 伝導度変調形ｍｏｓｆｅｔ
DE3725429A1 (de) * 1987-07-31 1989-02-09 Bosch Gmbh Robert Monolithisch integrierte schaltungsanordnung
JPH07120799B2 (ja) * 1988-04-01 1995-12-20 株式会社日立製作所 半導体装置
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
JP3163677B2 (ja) * 1991-09-24 2001-05-08 富士電機株式会社 Ｍｉｓｆｅｔ制御型サイリスタを有する半導体装置
US5321281A (en) * 1992-03-18 1994-06-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device and method of fabricating same
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
US5317171A (en) * 1992-04-29 1994-05-31 North Carolina State University MOS gated thyristor with remote turn-off electrode
FR2712428B1 (fr) * 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
JP3183055B2 (ja) * 1994-08-08 2001-07-03 富士電機株式会社 半導体双方向性スイッチおよびその駆動方法
US5801420A (en) * 1994-09-08 1998-09-01 Fuji Electric Co. Ltd. Lateral semiconductor arrangement for power ICS
JP2708027B2 (ja) * 1995-10-05 1998-02-04 日本電気株式会社 半導体装置およびその製造方法
US5793070A (en) * 1996-04-24 1998-08-11 Massachusetts Institute Of Technology Reduction of trapping effects in charge transfer devices
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (de) * 1998-02-12 1999-08-26 Siemens Ag Halbleiterbauelement mit Struktur zur Vermeidung von Querströmen

Also Published As

Publication number Publication date
WO2000049662A1 (de) 2000-08-24
DE50014606D1 (de) 2007-10-11
DE19906384A1 (de) 2000-08-24
EP1157425A1 (de) 2001-11-28
US20020066906A1 (en) 2002-06-06
JP2002542607A (ja) 2002-12-10
EP1157425B1 (de) 2007-08-29
JP3827954B2 (ja) 2006-09-27
US6914270B2 (en) 2005-07-05

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