ATE360261T1 - Bauelemente mit l- und u-gate für soi/sos- anwendungen - Google Patents
Bauelemente mit l- und u-gate für soi/sos- anwendungenInfo
- Publication number
- ATE360261T1 ATE360261T1 AT00988112T AT00988112T ATE360261T1 AT E360261 T1 ATE360261 T1 AT E360261T1 AT 00988112 T AT00988112 T AT 00988112T AT 00988112 T AT00988112 T AT 00988112T AT E360261 T1 ATE360261 T1 AT E360261T1
- Authority
- AT
- Austria
- Prior art keywords
- gate
- soi
- components
- sos
- channel
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Steering-Linkage Mechanisms And Four-Wheel Steering (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/473,158 US6307237B1 (en) | 1999-12-28 | 1999-12-28 | L-and U-gate devices for SOI/SOS applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE360261T1 true ATE360261T1 (de) | 2007-05-15 |
Family
ID=23878441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT00988112T ATE360261T1 (de) | 1999-12-28 | 2000-12-18 | Bauelemente mit l- und u-gate für soi/sos- anwendungen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6307237B1 (https=) |
| EP (2) | EP1783836A3 (https=) |
| JP (1) | JP2003518775A (https=) |
| AT (1) | ATE360261T1 (https=) |
| DE (1) | DE60034483T2 (https=) |
| WO (1) | WO2001048828A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3716406B2 (ja) * | 2000-02-08 | 2005-11-16 | 富士通株式会社 | 絶縁ゲート型半導体装置及びその製造方法 |
| US6483156B1 (en) * | 2000-03-16 | 2002-11-19 | International Business Machines Corporation | Double planar gated SOI MOSFET structure |
| US20030036236A1 (en) * | 2001-08-15 | 2003-02-20 | Joseph Benedetto | Method for radiation hardening N-channel MOS transistors |
| US6642579B2 (en) * | 2001-08-28 | 2003-11-04 | International Business Machines Corporation | Method of reducing the extrinsic body resistance in a silicon-on-insulator body contacted MOSFET |
| JP4044446B2 (ja) * | 2002-02-19 | 2008-02-06 | セイコーインスツル株式会社 | 半導体装置およびその製造方法 |
| US6960810B2 (en) * | 2002-05-30 | 2005-11-01 | Honeywell International Inc. | Self-aligned body tie for a partially depleted SOI device structure |
| US20030222308A1 (en) * | 2002-05-30 | 2003-12-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | SOI MOSFET with compact body-tied-source structure |
| US6861716B1 (en) * | 2003-10-31 | 2005-03-01 | International Business Machines Corporation | Ladder-type gate structure for four-terminal SOI semiconductor device |
| US7084462B1 (en) | 2005-04-15 | 2006-08-01 | International Business Machines Corporation | Parallel field effect transistor structure having a body contact |
| US20070090431A1 (en) * | 2005-10-24 | 2007-04-26 | Honeywell International Inc. | Device layout for reducing device upset due to single event effects |
| KR100654053B1 (ko) * | 2005-12-29 | 2006-12-05 | 동부일렉트로닉스 주식회사 | 부가 게이트 도체 패턴을 갖는 협채널 금속 산화물 반도체트랜지스터 |
| KR101219464B1 (ko) * | 2007-07-23 | 2013-01-11 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US8420460B2 (en) | 2008-03-26 | 2013-04-16 | International Business Machines Corporation | Method, structure and design structure for customizing history effects of SOI circuits |
| US8410554B2 (en) * | 2008-03-26 | 2013-04-02 | International Business Machines Corporation | Method, structure and design structure for customizing history effects of SOI circuits |
| US7964467B2 (en) * | 2008-03-26 | 2011-06-21 | International Business Machines Corporation | Method, structure and design structure for customizing history effects of soi circuits |
| GB2460395A (en) * | 2008-04-29 | 2009-12-02 | Sharp Kk | Thin film transistor and active matrix display |
| GB2459666A (en) * | 2008-04-29 | 2009-11-04 | Sharp Kk | Thin film transistor with low leakage current |
| JP5555864B2 (ja) * | 2009-12-22 | 2014-07-23 | 株式会社ブルックマンテクノロジ | 絶縁ゲート型半導体素子及び絶縁ゲート型半導体集積回路 |
| CN101931008B (zh) * | 2010-07-13 | 2015-04-08 | 中国科学院上海微系统与信息技术研究所 | 一种具有体接触结构的pd soi器件 |
| US8217456B1 (en) | 2011-03-11 | 2012-07-10 | International Business Machines Corporation | Low capacitance hi-K dual work function metal gate body-contacted field effect transistor |
| JP6184057B2 (ja) * | 2012-04-18 | 2017-08-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US20140103440A1 (en) * | 2012-10-15 | 2014-04-17 | Texas Instruments Incorporated | I-shaped gate electrode for improved sub-threshold mosfet performance |
| US9842858B2 (en) | 2015-11-18 | 2017-12-12 | Peregrine Semiconductor Corporation | Butted body contact for SOI transistor |
| US20170141134A1 (en) * | 2015-11-18 | 2017-05-18 | Peregrine Semiconductor Corporation | Butted Body Contact for SOI Transistor |
| DE112016006634T5 (de) * | 2016-03-23 | 2018-12-06 | Psemi Corporation | Anliegender bodykontakt für soi-transistor |
| US9837965B1 (en) | 2016-09-16 | 2017-12-05 | Peregrine Semiconductor Corporation | Standby voltage condition for fast RF amplifier bias recovery |
| FR3056331B1 (fr) * | 2016-09-19 | 2018-10-26 | Stmicroelectronics Sa | Polarisation de la region de substrat d'un transistor mos |
| US10424664B2 (en) | 2016-12-14 | 2019-09-24 | Globalfoundries Inc. | Poly gate extension source to body contact |
| US9960737B1 (en) | 2017-03-06 | 2018-05-01 | Psemi Corporation | Stacked PA power control |
| FR3076398B1 (fr) * | 2017-12-29 | 2019-12-27 | X-Fab France | Transistor et son procede de fabrication |
| CN113314610B (zh) | 2020-02-27 | 2024-04-30 | 台湾积体电路制造股份有限公司 | 晶体管器件及其制造方法 |
| US11444169B2 (en) | 2020-02-27 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor device with a gate structure having recesses overlying an interface between isolation and device regions |
| US11476279B2 (en) | 2020-08-06 | 2022-10-18 | Globalfoundries U.S. Inc. | Devices with staggered body contacts |
| CN114188408A (zh) * | 2020-09-14 | 2022-03-15 | 联华电子股份有限公司 | 半导体元件 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021542A (ja) * | 1983-07-15 | 1985-02-02 | Toshiba Corp | 半導体集積回路装置 |
| JPH0379035A (ja) * | 1989-08-22 | 1991-04-04 | Nippondenso Co Ltd | Ｍｏｓトランジスタ及びその製造方法 |
| US5217915A (en) * | 1991-04-08 | 1993-06-08 | Texas Instruments Incorporated | Method of making gate array base cell |
| USH1435H (en) | 1991-10-21 | 1995-05-02 | Cherne Richard D | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
| US5298773A (en) | 1992-08-17 | 1994-03-29 | United Technologies Corporation | Silicon-on-insulator H-transistor layout for gate arrays |
| US5317181A (en) | 1992-09-10 | 1994-05-31 | United Technologies Corporation | Alternative body contact for fully-depleted silicon-on-insulator transistors |
| US5334545A (en) | 1993-02-01 | 1994-08-02 | Allied Signal Inc. | Process for forming self-aligning cobalt silicide T-gates of silicon MOS devices |
| JP3364559B2 (ja) | 1995-10-11 | 2003-01-08 | 三菱電機株式会社 | 半導体装置 |
| US5821575A (en) | 1996-05-20 | 1998-10-13 | Digital Equipment Corporation | Compact self-aligned body contact silicon-on-insulator transistor |
| US5920093A (en) | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
| KR100252913B1 (ko) * | 1997-04-21 | 2000-04-15 | 김영환 | 반도체 소자 및 그 제조방법 |
| US5811855A (en) | 1997-12-29 | 1998-09-22 | United Technologies Corporation | SOI combination body tie |
-
1999
- 1999-12-28 US US09/473,158 patent/US6307237B1/en not_active Expired - Lifetime
-
2000
- 2000-12-18 WO PCT/US2000/034249 patent/WO2001048828A1/en not_active Ceased
- 2000-12-18 EP EP07101360A patent/EP1783836A3/en not_active Withdrawn
- 2000-12-18 EP EP00988112A patent/EP1243028B1/en not_active Expired - Lifetime
- 2000-12-18 DE DE60034483T patent/DE60034483T2/de not_active Expired - Lifetime
- 2000-12-18 AT AT00988112T patent/ATE360261T1/de not_active IP Right Cessation
- 2000-12-18 JP JP2001548446A patent/JP2003518775A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE60034483T2 (de) | 2008-01-03 |
| DE60034483D1 (de) | 2007-05-31 |
| EP1783836A2 (en) | 2007-05-09 |
| EP1783836A3 (en) | 2008-02-27 |
| US6307237B1 (en) | 2001-10-23 |
| WO2001048828A1 (en) | 2001-07-05 |
| EP1243028A1 (en) | 2002-09-25 |
| JP2003518775A (ja) | 2003-06-10 |
| EP1243028B1 (en) | 2007-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |