FR3056331B1 - Polarisation de la region de substrat d'un transistor mos - Google Patents

Polarisation de la region de substrat d'un transistor mos Download PDF

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Publication number
FR3056331B1
FR3056331B1 FR1658771A FR1658771A FR3056331B1 FR 3056331 B1 FR3056331 B1 FR 3056331B1 FR 1658771 A FR1658771 A FR 1658771A FR 1658771 A FR1658771 A FR 1658771A FR 3056331 B1 FR3056331 B1 FR 3056331B1
Authority
FR
France
Prior art keywords
polarization
mos transistor
substrate region
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1658771A
Other languages
English (en)
Other versions
FR3056331A1 (fr
Inventor
Agustin Monroy Aguirre
Guillaume Bertrand
Philippe Cathelin
Raphael Paulin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1658771A priority Critical patent/FR3056331B1/fr
Priority to CN201710100661.5A priority patent/CN107845682B/zh
Priority to CN201720168557.5U priority patent/CN206610813U/zh
Priority to US15/463,493 priority patent/US9847349B1/en
Publication of FR3056331A1 publication Critical patent/FR3056331A1/fr
Application granted granted Critical
Publication of FR3056331B1 publication Critical patent/FR3056331B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
FR1658771A 2016-09-19 2016-09-19 Polarisation de la region de substrat d'un transistor mos Expired - Fee Related FR3056331B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1658771A FR3056331B1 (fr) 2016-09-19 2016-09-19 Polarisation de la region de substrat d'un transistor mos
CN201710100661.5A CN107845682B (zh) 2016-09-19 2017-02-23 对mos晶体管的衬底区域进行偏置
CN201720168557.5U CN206610813U (zh) 2016-09-19 2017-02-23 集成电子器件
US15/463,493 US9847349B1 (en) 2016-09-19 2017-03-20 Biasing the substrate region of an MOS transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1658771A FR3056331B1 (fr) 2016-09-19 2016-09-19 Polarisation de la region de substrat d'un transistor mos
FR1658771 2016-09-19

Publications (2)

Publication Number Publication Date
FR3056331A1 FR3056331A1 (fr) 2018-03-23
FR3056331B1 true FR3056331B1 (fr) 2018-10-26

Family

ID=57233734

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1658771A Expired - Fee Related FR3056331B1 (fr) 2016-09-19 2016-09-19 Polarisation de la region de substrat d'un transistor mos

Country Status (3)

Country Link
US (1) US9847349B1 (fr)
CN (2) CN107845682B (fr)
FR (1) FR3056331B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3056331B1 (fr) * 2016-09-19 2018-10-26 Stmicroelectronics Sa Polarisation de la region de substrat d'un transistor mos
GB2606626B (en) * 2021-03-31 2023-07-26 Skyworks Solutions Inc Transistors having self-aligned body tie
TW202410202A (zh) * 2022-08-18 2024-03-01 聯華電子股份有限公司 半導體元件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317181A (en) * 1992-09-10 1994-05-31 United Technologies Corporation Alternative body contact for fully-depleted silicon-on-insulator transistors
US5587604A (en) * 1994-09-22 1996-12-24 International Business Machines Corporation Contacted body silicon-on-insulator field effect transistor
US6154091A (en) * 1999-06-02 2000-11-28 International Business Machines Corporation SOI sense amplifier with body contact structure
US6281593B1 (en) * 1999-12-06 2001-08-28 International Business Machines Corporation SOI MOSFET body contact and method of fabrication
US6307237B1 (en) * 1999-12-28 2001-10-23 Honeywell International Inc. L-and U-gate devices for SOI/SOS applications
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR20130142789A (ko) * 2012-06-20 2013-12-30 삼성전자주식회사 전력 ｍｏｓ 트랜지스터를 포함하는 반도체 소자
FR3037714A1 (fr) * 2015-06-18 2016-12-23 St Microelectronics Crolles 2 Sas Procede de realisation d'un contact sur une zone active d'un circuit integre, par exemple realise sur un substrat du type soi, en particulier fdsoi, et circuit integre correspondant
FR3056331B1 (fr) * 2016-09-19 2018-10-26 Stmicroelectronics Sa Polarisation de la region de substrat d'un transistor mos

Also Published As

Publication number Publication date
CN107845682A (zh) 2018-03-27
FR3056331A1 (fr) 2018-03-23
US9847349B1 (en) 2017-12-19
CN107845682B (zh) 2021-11-12
CN206610813U (zh) 2017-11-03

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