ATE35480T1 - Halbleitervorrichtung zur erzeugung eines elektronenstrahles. - Google Patents

Halbleitervorrichtung zur erzeugung eines elektronenstrahles.

Info

Publication number
ATE35480T1
ATE35480T1 AT85200083T AT85200083T ATE35480T1 AT E35480 T1 ATE35480 T1 AT E35480T1 AT 85200083 T AT85200083 T AT 85200083T AT 85200083 T AT85200083 T AT 85200083T AT E35480 T1 ATE35480 T1 AT E35480T1
Authority
AT
Austria
Prior art keywords
work function
electron
tip
cathodes
generation
Prior art date
Application number
AT85200083T
Other languages
English (en)
Inventor
Der Mast Karel Diederick Van
Holstlaan
Arthur Marie Eugen Hoeberechts
Gorkom Gerardus Gegorius P Van
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of ATE35480T1 publication Critical patent/ATE35480T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
AT85200083T 1984-02-01 1985-01-28 Halbleitervorrichtung zur erzeugung eines elektronenstrahles. ATE35480T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8400297A NL8400297A (nl) 1984-02-01 1984-02-01 Halfgeleiderinrichting voor het opwekken van een elektronenbundel.
EP85200083A EP0150885B1 (de) 1984-02-01 1985-01-28 Halbleitervorrichtung zur Erzeugung eines Elektronenstrahles

Publications (1)

Publication Number Publication Date
ATE35480T1 true ATE35480T1 (de) 1988-07-15

Family

ID=19843411

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85200083T ATE35480T1 (de) 1984-02-01 1985-01-28 Halbleitervorrichtung zur erzeugung eines elektronenstrahles.

Country Status (9)

Country Link
US (1) US4766340A (de)
EP (1) EP0150885B1 (de)
JP (1) JPS60180040A (de)
AT (1) ATE35480T1 (de)
CA (1) CA1234411A (de)
DE (2) DE3563577D1 (de)
HK (1) HK84091A (de)
NL (1) NL8400297A (de)
SG (1) SG51890G (de)

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EP0416558B1 (de) * 1989-09-04 1996-07-31 Canon Kabushiki Kaisha Elektronen emittierendes Element und Verfahren zur Herstellung desselben
EP0416626B1 (de) * 1989-09-07 1994-06-01 Canon Kabushiki Kaisha Elektronenemittierende Halbleitervorrichtung
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US5584740A (en) * 1993-03-31 1996-12-17 The United States Of America As Represented By The Secretary Of The Navy Thin-film edge field emitter device and method of manufacture therefor
EP0619495B1 (de) * 1993-04-05 1997-05-21 Siemens Aktiengesellschaft Verfahren zur Herstellung von Tunneleffekt-Sensoren
JPH07111868B2 (ja) * 1993-04-13 1995-11-29 日本電気株式会社 電界放出冷陰極素子
US5536988A (en) * 1993-06-01 1996-07-16 Cornell Research Foundation, Inc. Compound stage MEM actuator suspended for multidimensional motion
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KR0176423B1 (ko) * 1993-07-26 1999-05-15 박경팔 전계 방출 어레이 및 그의 제조 방법
US5394006A (en) * 1994-01-04 1995-02-28 Industrial Technology Research Institute Narrow gate opening manufacturing of gated fluid emitters
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EP0706196B1 (de) * 1994-10-05 2000-03-01 Matsushita Electric Industrial Co., Ltd. Elektronenemissionskathode; eine Elektronenemissionsvorrichtung, eine flache Anzeigevorrichtung, eine damit versehene thermoelektrische Kühlvorrichtung, und ein Verfahren zur Herstellung dieser Elektronenemissionskathode
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US5864200A (en) * 1996-01-18 1999-01-26 Micron Display Technology, Inc. Method for formation of a self-aligned emission grid for field emission devices and device using same
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JP2000021287A (ja) * 1998-06-30 2000-01-21 Sharp Corp 電界放出型電子源及びその製造方法
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US6384520B1 (en) * 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
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GB1444544A (en) * 1972-09-22 1976-08-04 Mullard Ltd Semiconductor photocathode
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US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
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US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
US4168213A (en) * 1976-04-29 1979-09-18 U.S. Philips Corporation Field emission device and method of forming same
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
JPS56160740A (en) * 1980-05-12 1981-12-10 Sony Corp Manufacture of thin-film field type cold cathode
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NL8104893A (nl) * 1981-10-29 1983-05-16 Philips Nv Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis.
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Also Published As

Publication number Publication date
SG51890G (en) 1990-08-31
DE3563577D1 (en) 1988-08-04
HK84091A (en) 1991-11-01
EP0150885B1 (de) 1988-06-29
DE8502305U1 (de) 1985-09-19
JPS60180040A (ja) 1985-09-13
CA1234411A (en) 1988-03-22
EP0150885A3 (en) 1985-08-28
EP0150885A2 (de) 1985-08-07
US4766340A (en) 1988-08-23
NL8400297A (nl) 1985-09-02

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