ATE353476T1 - Halbleiterstruktur für bilddetektoren - Google Patents

Halbleiterstruktur für bilddetektoren

Info

Publication number
ATE353476T1
ATE353476T1 AT03740528T AT03740528T ATE353476T1 AT E353476 T1 ATE353476 T1 AT E353476T1 AT 03740528 T AT03740528 T AT 03740528T AT 03740528 T AT03740528 T AT 03740528T AT E353476 T1 ATE353476 T1 AT E353476T1
Authority
AT
Austria
Prior art keywords
photo
detector
array
substrate
detectors
Prior art date
Application number
AT03740528T
Other languages
English (en)
Inventor
Iiro Hietanen
Original Assignee
Detection Technology Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9941194&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE353476(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Detection Technology Oy filed Critical Detection Technology Oy
Application granted granted Critical
Publication of ATE353476T1 publication Critical patent/ATE353476T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/911—Light sensitive array adapted to be scanned by electron beam, e.g. vidicon device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT03740528T 2002-07-26 2003-07-18 Halbleiterstruktur für bilddetektoren ATE353476T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0217394A GB2392307B8 (en) 2002-07-26 2002-07-26 Semiconductor structure for imaging detectors

Publications (1)

Publication Number Publication Date
ATE353476T1 true ATE353476T1 (de) 2007-02-15

Family

ID=9941194

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03740528T ATE353476T1 (de) 2002-07-26 2003-07-18 Halbleiterstruktur für bilddetektoren

Country Status (9)

Country Link
US (1) US8159049B2 (de)
EP (1) EP1525623B2 (de)
JP (1) JP2005533587A (de)
CN (1) CN100461464C (de)
AT (1) ATE353476T1 (de)
AU (1) AU2003281738A1 (de)
DE (1) DE60311656T3 (de)
GB (1) GB2392307B8 (de)
WO (1) WO2004012274A1 (de)

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US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
GB2392307B8 (en) 2002-07-26 2006-09-20 Detection Technology Oy Semiconductor structure for imaging detectors
US7215032B2 (en) * 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US8456015B2 (en) 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
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DE102005029784A1 (de) * 2005-06-24 2007-01-11 Siemens Ag Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
US20060289777A1 (en) * 2005-06-29 2006-12-28 Wen Li Detector with electrically isolated pixels
CN100559574C (zh) * 2005-08-26 2009-11-11 皇家飞利浦电子股份有限公司 电屏蔽穿通晶片互连和其制造方法及检测元件和检测设备
WO2007110799A2 (en) * 2006-03-27 2007-10-04 Philips Intellectual Property & Standards Gmbh Low ohmic through substrate interconnection for semiconductor carriers
US7960290B2 (en) * 2007-05-02 2011-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a semiconductor device
GB2449853B (en) * 2007-06-04 2012-02-08 Detection Technology Oy Photodetector for imaging system
JP2009070966A (ja) 2007-09-12 2009-04-02 Toshiba Corp 半導体装置とその製造方法
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
CN102217082B (zh) * 2008-09-15 2013-12-04 Osi光电子股份有限公司 具有浅n+层的薄有源层鱼骨形光敏二极管及其制造方法
US20110042576A1 (en) * 2009-08-20 2011-02-24 Icemos Technology Ltd. Direct wafer-bonded through-hole photodiode
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
IT1398204B1 (it) 2010-02-16 2013-02-14 St Microelectronics Srl Sistema e metodo per eseguire il test elettrico di vie passanti nel silicio (tsv - through silicon vias).
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
FR2974240A1 (fr) * 2011-04-12 2012-10-19 St Microelectronics Crolles 2 Capteur eclaire par la face arriere a isolement par jonction
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US8736008B2 (en) * 2012-01-04 2014-05-27 General Electric Company Photodiode array and methods of fabrication
US8901697B2 (en) * 2012-03-16 2014-12-02 Analog Devices, Inc. Integrated circuit having a semiconducting via; an integrated circuit including a sensor, such as a photosensitive device, and a method of making said integrated circuit
US9190346B2 (en) * 2012-08-31 2015-11-17 Synopsys, Inc. Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits
US9817928B2 (en) 2012-08-31 2017-11-14 Synopsys, Inc. Latch-up suppression and substrate noise coupling reduction through a substrate back-tie for 3D integrated circuits
JP6068955B2 (ja) 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
JP6068954B2 (ja) 2012-11-28 2017-01-25 浜松ホトニクス株式会社 フォトダイオードアレイ
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
US20170316925A1 (en) * 2014-11-18 2017-11-02 Innosys, Inc. A Two-Dimensional Anode Array Or Two-Dimensional Multi-Channel Anode For Large-Area Photodetection
US9337233B1 (en) 2014-12-15 2016-05-10 General Electric Company Photodiode array for imaging applications
KR102163117B1 (ko) * 2015-10-16 2020-10-07 한국전자기술연구원 3차원 레이저 스캐닝 장치 및 이를 포함하는 3차원 레이저 스캐닝 시스템
US9966318B1 (en) * 2017-01-31 2018-05-08 Stmicroelectronics S.R.L. System for electrical testing of through silicon vias (TSVs)
JP6953246B2 (ja) * 2017-09-08 2021-10-27 浜松ホトニクス株式会社 半導体ウエハの製造方法、半導体エネルギー線検出素子の製造方法、及び半導体ウエハ
US10813607B2 (en) * 2018-06-27 2020-10-27 Prismatic Sensors Ab X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor

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Also Published As

Publication number Publication date
EP1525623B1 (de) 2007-02-07
GB0217394D0 (en) 2002-09-04
US20060097290A1 (en) 2006-05-11
AU2003281738A1 (en) 2004-02-16
DE60311656T2 (de) 2007-10-25
EP1525623A1 (de) 2005-04-27
US8159049B2 (en) 2012-04-17
WO2004012274A1 (en) 2004-02-05
JP2005533587A (ja) 2005-11-10
EP1525623B8 (de) 2007-04-18
DE60311656D1 (de) 2007-03-22
GB2392307B8 (en) 2006-09-20
DE60311656T3 (de) 2016-03-03
GB2392307A (en) 2004-02-25
CN1672266A (zh) 2005-09-21
EP1525623B2 (de) 2015-09-30
GB2392307B (en) 2006-08-09
CN100461464C (zh) 2009-02-11

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