JPS6439579A - X-ray detector - Google Patents

X-ray detector

Info

Publication number
JPS6439579A
JPS6439579A JP62198812A JP19881287A JPS6439579A JP S6439579 A JPS6439579 A JP S6439579A JP 62198812 A JP62198812 A JP 62198812A JP 19881287 A JP19881287 A JP 19881287A JP S6439579 A JPS6439579 A JP S6439579A
Authority
JP
Japan
Prior art keywords
layers
charges
blind
sensitive layers
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62198812A
Other languages
Japanese (ja)
Inventor
Yoshimi Akai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62198812A priority Critical patent/JPS6439579A/en
Priority to US07/182,233 priority patent/US4914301A/en
Priority to DE3813079A priority patent/DE3813079A1/en
Publication of JPS6439579A publication Critical patent/JPS6439579A/en
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce crosstalk by providing a charge diffusion inhibiting means which inhibits charges generated in a blind layer adjacent to a sensitive layer from being diffused between adjacent sensitive layers. CONSTITUTION:Sensitive layers (charge diffusion inhibiting means) 11 are formed between sensitive layers 4 of a photodiode 3. Those sensitive layers 11 are formed right below spacers 2 and inhibit charges generated in the blind layers from being diffused to other channels and are held at the same potential with a ground electrode 9. Then when X rays are made incident on the scintillator 1, the scintillator 1 generates visible light which is projected on the sensitive layers 4 and blind layers. Then charges are generated at the irradiated parts and generated charges are tried to flow to a place where charge density is low by diffusion, specially, in the blind layers. The sensitive layers 11, however, are formed and P-N junction is formed at the parts, so diffused charges are absorbed by the sensitive layers 11 and flow to the ground side. Consequently, the charges generated in the blind layers are inhibited from being diffused to other channel elements, thereby reducing the crosstalk.
JP62198812A 1987-04-21 1987-08-06 X-ray detector Expired - Lifetime JPS6439579A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62198812A JPS6439579A (en) 1987-08-06 1987-08-06 X-ray detector
US07/182,233 US4914301A (en) 1987-04-21 1988-04-15 X-ray detector
DE3813079A DE3813079A1 (en) 1987-04-21 1988-04-19 X-RAY RAY DETECTOR

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62198812A JPS6439579A (en) 1987-08-06 1987-08-06 X-ray detector

Publications (1)

Publication Number Publication Date
JPS6439579A true JPS6439579A (en) 1989-02-09

Family

ID=16397320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62198812A Expired - Lifetime JPS6439579A (en) 1987-04-21 1987-08-06 X-ray detector

Country Status (1)

Country Link
JP (1) JPS6439579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207819A (en) * 1987-04-20 1993-05-04 Agro-Kanesho Co., Ltd Phenoxypropionic acid ester derivatives
JP2005533587A (en) * 2002-07-26 2005-11-10 ディテクション、テクノロジー、オサケ、ユキチュア Semiconductor structure for image detector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286857A (en) * 1985-10-14 1987-04-21 Fuji Photo Film Co Ltd Solid-state image pickup element for radiation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286857A (en) * 1985-10-14 1987-04-21 Fuji Photo Film Co Ltd Solid-state image pickup element for radiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207819A (en) * 1987-04-20 1993-05-04 Agro-Kanesho Co., Ltd Phenoxypropionic acid ester derivatives
JP2005533587A (en) * 2002-07-26 2005-11-10 ディテクション、テクノロジー、オサケ、ユキチュア Semiconductor structure for image detector

Similar Documents

Publication Publication Date Title
US5481114A (en) Process and apparatus for the simultaneous selective detection of neutrons and X or gamma photons
GB2107927B (en) Avalanche photodiode with quantum well layer
GB8523060D0 (en) Coal analysis
SE8000773L (en) scintillation detector
JPS6439579A (en) X-ray detector
JPS5599087A (en) Emission type tomography
JPS60188869A (en) Scintillation detector
Sohrabi A new dual response albedo neutron personnel dosimeter
JPS57172272A (en) Multichannel type radiation detector
JPH01269083A (en) Radiant ray detecting element
JPS5410615A (en) Photoelectric converter device
JPS53136987A (en) Photo diode
JPS5460881A (en) Optical action type semiconductor device
JPS6139977Y2 (en)
WO2002025310A3 (en) Scintillation crystal assembly with reduced detection of scatter radiation
JPS63308593A (en) Radiation detector
JPS6469997A (en) Induced radioactivity suppressing concrete structure
JPS57190282A (en) Semiconductor gamma, x rays detector
JPS53126885A (en) Semiconductor photo detector
JPS57137870A (en) Detection method for alpha-ray radioactive nuclide
RU739U1 (en) Scintillation detector
JPS5399889A (en) Composite photo detector
Ruiz et al. A 3 X 3 CsI (Tl) array as an example of a segmented detector
JPS5750674A (en) Radiation detector
JPS53105182A (en) Semiconductor radiant-ray detector

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080615

Year of fee payment: 15