JPS57190282A - Semiconductor gamma, x rays detector - Google Patents
Semiconductor gamma, x rays detectorInfo
- Publication number
- JPS57190282A JPS57190282A JP7629681A JP7629681A JPS57190282A JP S57190282 A JPS57190282 A JP S57190282A JP 7629681 A JP7629681 A JP 7629681A JP 7629681 A JP7629681 A JP 7629681A JP S57190282 A JPS57190282 A JP S57190282A
- Authority
- JP
- Japan
- Prior art keywords
- energy
- gamma ray
- incidence
- detection elements
- gamma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/02—Dosimeters
- G01T1/026—Semiconductor dose-rate meters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/242—Stacked detectors, e.g. for depth information
Abstract
PURPOSE:To bring the counting rate of gamma ray close to a fixed level depending on no energy incidence irradiation beam by laminating detection elements through an absorbing material. CONSTITUTION:Silicon detection elements 1, 3 and 5 of a P-N junction, silicon detection elements 2 and 4 opposite in the P-N junction and the like are laminated through a semi-circle layer 7 mainly composed of lead as gamma ray absorbing material. A semi-circle layer 8, an electrode 9 and the like an provided on the elements 1 and 5 respectively. Therefore, when the energy of the incidence gamma ray 10 is small, the output is produced only from the element 1 or the like close to the incidence side. As the irradiation energy becomes small, the counting rate of gamma ray lowers while when it becomes large, the rate increases and comes closer to a fixed level depending on no energy of the incidence irradiation beam. It is the same with the X rays. Thus, a semiconductor gamma, X rays detector with a high reliability and a long life is obtained which is effectively usable for measuring irradiatin dose in the management of exposure or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7629681A JPS57190282A (en) | 1981-05-20 | 1981-05-20 | Semiconductor gamma, x rays detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7629681A JPS57190282A (en) | 1981-05-20 | 1981-05-20 | Semiconductor gamma, x rays detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190282A true JPS57190282A (en) | 1982-11-22 |
Family
ID=13601386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7629681A Pending JPS57190282A (en) | 1981-05-20 | 1981-05-20 | Semiconductor gamma, x rays detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190282A (en) |
-
1981
- 1981-05-20 JP JP7629681A patent/JPS57190282A/en active Pending
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