ATE299296T1 - Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche - Google Patents

Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche

Info

Publication number
ATE299296T1
ATE299296T1 AT98914546T AT98914546T ATE299296T1 AT E299296 T1 ATE299296 T1 AT E299296T1 AT 98914546 T AT98914546 T AT 98914546T AT 98914546 T AT98914546 T AT 98914546T AT E299296 T1 ATE299296 T1 AT E299296T1
Authority
AT
Austria
Prior art keywords
silicon carbide
epitaxial layer
carbide substrates
group iii
recovery
Prior art date
Application number
AT98914546T
Other languages
English (en)
Inventor
Gerald H Negley
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE299296T1 publication Critical patent/ATE299296T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
AT98914546T 1997-04-17 1998-04-07 Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche ATE299296T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/840,961 US5923946A (en) 1997-04-17 1997-04-17 Recovery of surface-ready silicon carbide substrates
PCT/US1998/006836 WO1998047185A1 (en) 1997-04-17 1998-04-07 Recovery of surface-ready silicon carbide substrates

Publications (1)

Publication Number Publication Date
ATE299296T1 true ATE299296T1 (de) 2005-07-15

Family

ID=25283677

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98914546T ATE299296T1 (de) 1997-04-17 1998-04-07 Ruckgewinnung von siliciumcarbidsubstraten mit nutzbarer oberfläche

Country Status (12)

Country Link
US (1) US5923946A (de)
EP (1) EP0976162B1 (de)
JP (1) JP4063336B2 (de)
KR (1) KR100569796B1 (de)
CN (1) CN1123073C (de)
AT (1) ATE299296T1 (de)
AU (1) AU6887498A (de)
CA (1) CA2286019C (de)
DE (1) DE69830788T2 (de)
ES (1) ES2244055T3 (de)
TW (1) TW385487B (de)
WO (1) WO1998047185A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6533874B1 (en) 1996-12-03 2003-03-18 Advanced Technology Materials, Inc. GaN-based devices using thick (Ga, Al, In)N base layers
CN1142598C (zh) 1997-07-25 2004-03-17 日亚化学工业株式会社 氮化物半导体发光器件
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6503769B2 (en) * 1998-10-26 2003-01-07 Matsushita Electronics Corporation Semiconductor device and method for fabricating the same
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
US6995032B2 (en) * 2002-07-19 2006-02-07 Cree, Inc. Trench cut light emitting diodes and methods of fabricating same
KR20050085756A (ko) * 2002-12-20 2005-08-29 크리 인코포레이티드 메사 구조와 다중 패시베이션층을 구비한 반도체 소자형성방법 및 그에 관련된 소자
US20050079642A1 (en) * 2003-10-14 2005-04-14 Matsushita Elec. Ind. Co. Ltd. Manufacturing method of nitride semiconductor device
US7008861B2 (en) * 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
JP2006253172A (ja) * 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201310692A (zh) * 2011-08-31 2013-03-01 Solution Chemicals Inc Ｌｅｄ之基板重製方法
CN102593285B (zh) * 2012-03-06 2014-07-09 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
KR101226905B1 (ko) * 2012-07-31 2013-01-29 주식회사 세미콘라이트 3족 질화물 반도체 증착용 기판의 재생 방법
KR101226904B1 (ko) * 2012-07-31 2013-01-29 주식회사 세미콘라이트 3족 질화물 반도체 증착용 기판의 재생 방법
CN103730548B (zh) * 2013-12-28 2016-07-06 福建省诺希新材料科技有限公司 一种利用高温氧化性气体回收图案化蓝宝石衬底的方法
TWI737610B (zh) 2015-05-20 2021-09-01 美商納諾光子公司 用於改進發光二極體之效率的程序

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50113500A (de) * 1974-02-15 1975-09-05
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
US4009299A (en) * 1975-10-22 1977-02-22 Motorola, Inc. Tin strip formulation for metal to glass seal diodes
JPS5343480A (en) * 1976-10-01 1978-04-19 Matsushita Electric Ind Co Ltd Etching method of gallium nitride
JPS60960B2 (ja) * 1979-12-17 1985-01-11 松下電器産業株式会社 窒化ガリウム発光素子アレイの製造方法
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
JPH02228470A (ja) * 1989-03-02 1990-09-11 Toshiba Corp スパッタターゲット
US5030536A (en) * 1989-12-26 1991-07-09 Xerox Corporation Processes for restoring amorphous silicon imaging members
US5131979A (en) * 1991-05-21 1992-07-21 Lawrence Technology Semiconductor EPI on recycled silicon wafers
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
EP0668611A1 (de) * 1994-02-22 1995-08-23 International Business Machines Corporation Verfahren zur Wiedergewinnung nackter Halbleiterchips aus Kunststoff-verpackten Modulen
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
SE9501312D0 (sv) * 1995-04-10 1995-04-10 Abb Research Ltd Method for procucing a semiconductor device

Also Published As

Publication number Publication date
KR100569796B1 (ko) 2006-04-10
AU6887498A (en) 1998-11-11
ES2244055T3 (es) 2005-12-01
DE69830788T2 (de) 2006-05-04
CA2286019C (en) 2003-10-07
WO1998047185A1 (en) 1998-10-22
KR20010006551A (ko) 2001-01-26
TW385487B (en) 2000-03-21
EP0976162B1 (de) 2005-07-06
CN1123073C (zh) 2003-10-01
JP2001525121A (ja) 2001-12-04
EP0976162A1 (de) 2000-02-02
US5923946A (en) 1999-07-13
CN1252895A (zh) 2000-05-10
JP4063336B2 (ja) 2008-03-19
CA2286019A1 (en) 1998-10-22
DE69830788D1 (de) 2005-08-11

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