ATE295990T1 - Elektroden, verfahren und vorrichtung für eine speicherstruktur - Google Patents
Elektroden, verfahren und vorrichtung für eine speicherstrukturInfo
- Publication number
- ATE295990T1 ATE295990T1 AT02778118T AT02778118T ATE295990T1 AT E295990 T1 ATE295990 T1 AT E295990T1 AT 02778118 T AT02778118 T AT 02778118T AT 02778118 T AT02778118 T AT 02778118T AT E295990 T1 ATE295990 T1 AT E295990T1
- Authority
- AT
- Austria
- Prior art keywords
- electrodes
- electrode layers
- addressable
- matrix
- functional medium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Electrolytic Production Of Metals (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20015509A NO20015509D0 (no) | 2001-11-09 | 2001-11-09 | Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte |
| PCT/NO2002/000414 WO2003041084A1 (en) | 2001-11-09 | 2002-11-08 | Electrodes, method and apparatus for memory structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE295990T1 true ATE295990T1 (de) | 2005-06-15 |
Family
ID=19913010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02778118T ATE295990T1 (de) | 2001-11-09 | 2002-11-08 | Elektroden, verfahren und vorrichtung für eine speicherstruktur |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1446805B8 (https=) |
| JP (1) | JP2005509282A (https=) |
| KR (1) | KR100577544B1 (https=) |
| CN (1) | CN1582481A (https=) |
| AT (1) | ATE295990T1 (https=) |
| AU (1) | AU2002339770B2 (https=) |
| CA (1) | CA2466267C (https=) |
| DE (1) | DE60204239T2 (https=) |
| ES (1) | ES2242883T3 (https=) |
| NO (1) | NO20015509D0 (https=) |
| RU (1) | RU2275697C2 (https=) |
| WO (1) | WO2003041084A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833593B2 (en) | 2001-11-09 | 2004-12-21 | Thin Film Electronics Asa | Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter |
| US6724028B2 (en) | 2001-12-10 | 2004-04-20 | Hans Gude Gudesen | Matrix-addressable array of integrated transistor/memory structures |
| US6649504B2 (en) | 2001-12-14 | 2003-11-18 | Thin Film Electronics Asa | Method for fabricating high aspect ratio electrodes |
| NO321280B1 (no) | 2004-07-22 | 2006-04-18 | Thin Film Electronics Asa | Organisk, elektronisk krets og fremgangsmate til dens fremstilling |
| US7808024B2 (en) | 2004-09-27 | 2010-10-05 | Intel Corporation | Ferroelectric polymer memory module |
| CN105393334B (zh) * | 2013-03-29 | 2018-05-11 | 应用材料公司 | 压印有图案以形成隔离器件区域的基板 |
| US10199386B2 (en) * | 2015-07-23 | 2019-02-05 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
| KR102408494B1 (ko) * | 2019-08-13 | 2022-06-15 | 브이메모리 주식회사 | 전기장을 이용한 전류 경로 제어 방법 및 전자 소자 |
| CN114582632B (zh) * | 2022-01-11 | 2024-05-17 | 华东师范大学 | 一种应用于动态目标提取的铁电电容阵列及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952031A (en) * | 1987-06-19 | 1990-08-28 | Victor Company Of Japan, Ltd. | Liquid crystal display device |
| US5017515A (en) * | 1989-10-02 | 1991-05-21 | Texas Instruments Incorporated | Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers |
| JPH07106450A (ja) * | 1993-10-08 | 1995-04-21 | Olympus Optical Co Ltd | 強誘電体ゲートトランジスタメモリ |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| DE69739045D1 (de) * | 1997-08-27 | 2008-11-27 | St Microelectronics Srl | Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse |
| US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
| US6473388B1 (en) * | 2000-08-31 | 2002-10-29 | Hewlett Packard Company | Ultra-high density information storage device based on modulated cathodoconductivity |
-
2001
- 2001-11-09 NO NO20015509A patent/NO20015509D0/no unknown
-
2002
- 2002-11-08 WO PCT/NO2002/000414 patent/WO2003041084A1/en not_active Ceased
- 2002-11-08 KR KR1020047007005A patent/KR100577544B1/ko not_active Expired - Fee Related
- 2002-11-08 RU RU2004116275/09A patent/RU2275697C2/ru not_active IP Right Cessation
- 2002-11-08 JP JP2003543032A patent/JP2005509282A/ja not_active Abandoned
- 2002-11-08 CN CNA028220994A patent/CN1582481A/zh active Pending
- 2002-11-08 CA CA002466267A patent/CA2466267C/en not_active Expired - Fee Related
- 2002-11-08 ES ES02778118T patent/ES2242883T3/es not_active Expired - Lifetime
- 2002-11-08 AT AT02778118T patent/ATE295990T1/de not_active IP Right Cessation
- 2002-11-08 EP EP02778118A patent/EP1446805B8/en not_active Expired - Lifetime
- 2002-11-08 DE DE60204239T patent/DE60204239T2/de not_active Expired - Fee Related
- 2002-11-08 AU AU2002339770A patent/AU2002339770B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003041084A1 (en) | 2003-05-15 |
| CN1582481A (zh) | 2005-02-16 |
| RU2275697C2 (ru) | 2006-04-27 |
| NO20015509D0 (no) | 2001-11-09 |
| DE60204239D1 (de) | 2005-06-23 |
| CA2466267A1 (en) | 2003-05-15 |
| JP2005509282A (ja) | 2005-04-07 |
| DE60204239T2 (de) | 2006-01-26 |
| EP1446805A1 (en) | 2004-08-18 |
| RU2004116275A (ru) | 2005-10-27 |
| EP1446805B1 (en) | 2005-05-18 |
| EP1446805B8 (en) | 2006-06-14 |
| KR100577544B1 (ko) | 2006-05-10 |
| CA2466267C (en) | 2006-05-23 |
| ES2242883T3 (es) | 2005-11-16 |
| KR20040063929A (ko) | 2004-07-14 |
| AU2002339770B2 (en) | 2006-01-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |