DE60129540D1 - Multidimensionale adressierungsarchitektur für elektronische anordnungen - Google Patents

Multidimensionale adressierungsarchitektur für elektronische anordnungen

Info

Publication number
DE60129540D1
DE60129540D1 DE60129540T DE60129540T DE60129540D1 DE 60129540 D1 DE60129540 D1 DE 60129540D1 DE 60129540 T DE60129540 T DE 60129540T DE 60129540 T DE60129540 T DE 60129540T DE 60129540 D1 DE60129540 D1 DE 60129540D1
Authority
DE
Germany
Prior art keywords
electrodes
strip
matrix
sets
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60129540T
Other languages
English (en)
Other versions
DE60129540T2 (de
Inventor
Magnus Berggren
Per-Erik Nordal
Geirr I Leistad
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ensurge Micropower ASA
Original Assignee
Thin Film Electronics ASA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics ASA filed Critical Thin Film Electronics ASA
Application granted granted Critical
Publication of DE60129540D1 publication Critical patent/DE60129540D1/de
Publication of DE60129540T2 publication Critical patent/DE60129540T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Executing Machine-Instructions (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Electroluminescent Light Sources (AREA)
DE60129540T 2000-03-22 2001-03-22 Multidimensionale adressierungsarchitektur für elektronische anordnungen Expired - Fee Related DE60129540T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NO20001469 2000-03-22
NO20001469A NO315728B1 (no) 2000-03-22 2000-03-22 Multidimensjonal adresseringsarkitektur for elektroniske innretninger
PCT/NO2001/000124 WO2001071722A1 (en) 2000-03-22 2001-03-22 Multidimensional addressing architecture for electronic devices

Publications (2)

Publication Number Publication Date
DE60129540D1 true DE60129540D1 (de) 2007-09-06
DE60129540T2 DE60129540T2 (de) 2008-04-03

Family

ID=19910912

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60129540T Expired - Fee Related DE60129540T2 (de) 2000-03-22 2001-03-22 Multidimensionale adressierungsarchitektur für elektronische anordnungen

Country Status (12)

Country Link
US (1) US6424553B2 (de)
EP (1) EP1269475B1 (de)
JP (1) JP2003528354A (de)
KR (1) KR100524427B1 (de)
CN (1) CN1419696A (de)
AT (1) ATE368286T1 (de)
AU (1) AU776671B2 (de)
CA (1) CA2403859C (de)
DE (1) DE60129540T2 (de)
NO (1) NO315728B1 (de)
RU (1) RU2248626C2 (de)
WO (1) WO2001071722A1 (de)

Families Citing this family (30)

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US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
KR100900080B1 (ko) * 2001-05-07 2009-06-01 어드밴스드 마이크로 디바이시즈, 인코포레이티드 자기 조립형 폴리머 막을 구비한 메모리 디바이스 및 그제조 방법
WO2002091494A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Switch element having memeory effect
WO2002091495A2 (en) * 2001-05-07 2002-11-14 Coatue Corporation Molecular memory device
KR100885276B1 (ko) 2001-05-07 2009-02-23 어드밴스드 마이크로 디바이시즈, 인코포레이티드 복합 분자 물질을 이용한 부동 게이트 메모리 디바이스
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US20020167599A1 (en) * 2001-05-08 2002-11-14 Carau Frank P. Reusable camera
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
CN100419906C (zh) 2001-08-13 2008-09-17 先进微装置公司 存储器单元
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
GB2382706B (en) * 2001-10-31 2005-08-10 Alphamosaic Ltd Memory structure
US6762950B2 (en) * 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US6687147B2 (en) * 2002-04-02 2004-02-03 Hewlett-Packard Development Company, L.P. Cubic memory array with diagonal select lines
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7084446B2 (en) * 2003-08-25 2006-08-01 Intel Corporation Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
JP2005136071A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp クロスポイント型強誘電体メモリ
NO320176B1 (no) * 2004-02-03 2005-11-07 Kim Oyhus Stablede lag av gitter-minne koblet til integrert krets.
US20060220529A1 (en) * 2005-03-31 2006-10-05 Ivan Pawlenko Large scale transportable illuminated display
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
UA81208C2 (en) * 2007-06-01 2007-12-10 Yurii Bogdanovych Zarvanytskyi Three-dimensional device for processing information and a method for processing information
KR101207115B1 (ko) 2008-07-11 2012-12-03 샤프 가부시키가이샤 표시 장치 및 표시 장치의 구동 방법
KR102044476B1 (ko) 2013-05-02 2019-11-13 삼성전자주식회사 터치 스크린 패널, 터치 센싱 컨트롤러 및 터치 센싱 시스템
JP2020017335A (ja) * 2016-11-25 2020-01-30 コニカミノルタ株式会社 有機ｅｌディスプレイ
CN108056634A (zh) * 2017-11-22 2018-05-22 上海未石影视文化有限公司 一种三面翻多维展台
KR20200127746A (ko) * 2019-05-03 2020-11-11 에스케이하이닉스 주식회사 전자 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
FR2639461A1 (fr) 1988-11-18 1990-05-25 Labo Electronique Physique Arrangement bidimensionnel de points memoire et structure de reseaux de neurones utilisant un tel arrangement
US5742086A (en) * 1994-11-02 1998-04-21 Lsi Logic Corporation Hexagonal DRAM array
US5802607A (en) 1995-10-20 1998-09-08 Triplette; Walter W. Fencing jackets made from electrically conductive threads
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO304956B1 (no) 1997-07-22 1999-03-08 Opticom As Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
NO306529B1 (no) 1998-01-16 1999-11-15 Opticom As Transistor
US6021074A (en) * 1998-09-04 2000-02-01 Advanced Micro Devices, Inc. Direct access to random redundant logic gates by using multiple short addresses

Also Published As

Publication number Publication date
RU2002128022A (ru) 2004-02-20
ATE368286T1 (de) 2007-08-15
US6424553B2 (en) 2002-07-23
CA2403859C (en) 2005-06-28
US20010040828A1 (en) 2001-11-15
JP2003528354A (ja) 2003-09-24
EP1269475B1 (de) 2007-07-25
DE60129540T2 (de) 2008-04-03
NO315728B1 (no) 2003-10-13
RU2248626C2 (ru) 2005-03-20
KR20020084133A (ko) 2002-11-04
KR100524427B1 (ko) 2005-11-01
NO20001469D0 (no) 2000-03-22
CA2403859A1 (en) 2001-09-27
WO2001071722A1 (en) 2001-09-27
AU776671B2 (en) 2004-09-16
AU4289801A (en) 2001-10-03
NO20001469L (no) 2001-09-24
CN1419696A (zh) 2003-05-21
EP1269475A1 (de) 2003-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee