ATE288907T1 - Substituierte oxim-derivate und ihre verwendung als latente säuren - Google Patents

Substituierte oxim-derivate und ihre verwendung als latente säuren

Info

Publication number
ATE288907T1
ATE288907T1 AT02732733T AT02732733T ATE288907T1 AT E288907 T1 ATE288907 T1 AT E288907T1 AT 02732733 T AT02732733 T AT 02732733T AT 02732733 T AT02732733 T AT 02732733T AT E288907 T1 ATE288907 T1 AT E288907T1
Authority
AT
Austria
Prior art keywords
sub
alkyl
phenyl
hydrogen
latent acids
Prior art date
Application number
AT02732733T
Other languages
German (de)
English (en)
Inventor
Akira Matsumoto
Hitoshi Yamato
Toshikage Asakura
Masaki Ohwa
Peter Murer
Original Assignee
Ciba Sc Holding Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Sc Holding Ag filed Critical Ciba Sc Holding Ag
Application granted granted Critical
Publication of ATE288907T1 publication Critical patent/ATE288907T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/26—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D333/30—Hetero atoms other than halogen
    • C07D333/36—Nitrogen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/117—Free radical
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Heterocyclic Compounds Containing Sulfur Atoms (AREA)
  • Dental Preparations (AREA)
  • Indole Compounds (AREA)
AT02732733T 2001-06-01 2002-05-23 Substituierte oxim-derivate und ihre verwendung als latente säuren ATE288907T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01810533 2001-06-01
PCT/EP2002/005667 WO2002098870A1 (en) 2001-06-01 2002-05-23 Substituted oxime derivatives and the use thereof as latent acids

Publications (1)

Publication Number Publication Date
ATE288907T1 true ATE288907T1 (de) 2005-02-15

Family

ID=8183942

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02732733T ATE288907T1 (de) 2001-06-01 2002-05-23 Substituierte oxim-derivate und ihre verwendung als latente säuren

Country Status (9)

Country Link
US (1) US7026094B2 (enExample)
EP (1) EP1392675B1 (enExample)
JP (1) JP4408220B2 (enExample)
KR (1) KR100875612B1 (enExample)
CN (1) CN100338056C (enExample)
AT (1) ATE288907T1 (enExample)
DE (1) DE60202950T2 (enExample)
DK (1) DK1392675T3 (enExample)
WO (1) WO2002098870A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2446722A1 (en) * 2001-06-11 2002-12-19 Ciba Specialty Chemicals Holding Inc. Oxime ester photoinitiators having a combined structure
JP3849486B2 (ja) * 2001-10-19 2006-11-22 住友化学株式会社 化学増幅型ポジ型レジスト組成物
BR0307501A (pt) * 2002-02-06 2004-12-07 Ciba Sc Holding Ag Derivados de sulfonato e o uso destes como ácidos latentes
WO2004074242A2 (en) * 2003-02-19 2004-09-02 Ciba Specialty Chemicals Holding Inc. Halogenated oxime derivatives and the use thereof as latent acids
JP2004333865A (ja) * 2003-05-07 2004-11-25 Osaka Gas Co Ltd 光酸発生剤及びそれを含む光重合性樹脂組成物
WO2006046398A1 (ja) * 2004-10-29 2006-05-04 Nissan Chemical Industries, Ltd. 光酸発生剤を含む染料含有レジスト組成物及びそれを用いるカラーフィルター
JP2006225476A (ja) * 2005-02-16 2006-08-31 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
KR101115089B1 (ko) * 2005-03-02 2012-02-29 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
US20070077452A1 (en) * 2005-10-04 2007-04-05 Jie Liu Organic light emitting devices having latent activated layers and methods of fabricating the same
CN101341172B (zh) * 2005-12-20 2013-01-16 西巴控股有限公司 肟酯光引发剂
US20070176167A1 (en) * 2006-01-27 2007-08-02 General Electric Company Method of making organic light emitting devices
JP4548617B2 (ja) * 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
US7816069B2 (en) * 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US8466096B2 (en) 2007-04-26 2013-06-18 Afton Chemical Corporation 1,3,2-dioxaphosphorinane, 2-sulfide derivatives for use as anti-wear additives in lubricant compositions
GB2450975B (en) 2007-07-12 2010-02-24 Ciba Holding Inc Yellow radiation curing inks
JP4637221B2 (ja) * 2007-09-28 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
WO2010112408A1 (en) 2009-03-30 2010-10-07 Basf Se Uv-dose indicator films
KR20110129692A (ko) * 2010-05-26 2011-12-02 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴의 형성 방법
US10487050B2 (en) 2014-08-29 2019-11-26 Basf Se Oxime sulfonate derivatives
KR102295614B1 (ko) * 2014-09-29 2021-08-27 엘지디스플레이 주식회사 유기 발광 표시 장치
CN110325912B (zh) * 2017-02-23 2023-07-14 艾曲迪微系统股份有限公司 感光性树脂组合物、图案的制造方法、固化物、层间绝缘膜、覆盖涂层、保护膜和电子部件
WO2020031240A1 (ja) 2018-08-06 2020-02-13 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化膜の製造方法、硬化膜、層間絶縁膜、カバーコート層、表面保護膜及び電子部品

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
DE3660255D1 (en) * 1985-04-12 1988-07-07 Ciba Geigy Ag Oxime sulphonates containing reactive groups
GB8608528D0 (en) 1986-04-08 1986-05-14 Ciba Geigy Ag Production of positive images
EP0571330B1 (de) * 1992-05-22 1999-04-07 Ciba SC Holding AG Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3830183B2 (ja) * 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
MY117352A (en) 1995-10-31 2004-06-30 Ciba Sc Holding Ag Oximesulfonic acid esters and the use thereof as latent sulfonic acids.
US6770420B2 (en) * 1996-09-02 2004-08-03 Ciba Specialty Chemicals Corporation Alkylsulfonyloximes for high-resolution i-line photoresists of high sensitivity
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
DE69904073T2 (de) * 1998-10-29 2003-07-17 Ciba Speciality Chemicals Holding Inc., Basel Oximderivate und ihre verwendung als latente saüre
ATE330254T1 (de) * 1999-03-03 2006-07-15 Ciba Sc Holding Ag Oximderivate und ihre verwendung als photoinitiatoren
TWI272451B (en) * 2000-09-25 2007-02-01 Ciba Sc Holding Ag Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition

Also Published As

Publication number Publication date
US7026094B2 (en) 2006-04-11
DK1392675T3 (da) 2005-04-04
CN100338056C (zh) 2007-09-19
EP1392675A1 (en) 2004-03-03
JP4408220B2 (ja) 2010-02-03
DE60202950T2 (de) 2005-07-07
DE60202950D1 (de) 2005-03-17
JP2005504013A (ja) 2005-02-10
KR100875612B1 (ko) 2008-12-24
EP1392675B1 (en) 2005-02-09
WO2002098870A1 (en) 2002-12-12
KR20040018384A (ko) 2004-03-03
CN1512990A (zh) 2004-07-14
US20040209186A1 (en) 2004-10-21

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