ATE282100T1 - Integrierte phasentrennvorrchtung für hoch- vacuumanlage - Google Patents

Integrierte phasentrennvorrchtung für hoch- vacuumanlage

Info

Publication number
ATE282100T1
ATE282100T1 AT01971298T AT01971298T ATE282100T1 AT E282100 T1 ATE282100 T1 AT E282100T1 AT 01971298 T AT01971298 T AT 01971298T AT 01971298 T AT01971298 T AT 01971298T AT E282100 T1 ATE282100 T1 AT E282100T1
Authority
AT
Austria
Prior art keywords
cryogenic
phase separator
liquid nitrogen
shroud
panel
Prior art date
Application number
AT01971298T
Other languages
English (en)
Inventor
Paul E Colombo
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Application granted granted Critical
Publication of ATE282100T1 publication Critical patent/ATE282100T1/de

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
    • F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
  • Physical Vapour Deposition (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01971298T 2000-09-22 2001-09-21 Integrierte phasentrennvorrchtung für hoch- vacuumanlage ATE282100T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/668,772 US6367267B1 (en) 2000-09-22 2000-09-22 Integrated phase separator for ultra high vacuum system
PCT/US2001/029685 WO2002024983A2 (en) 2000-09-22 2001-09-21 Integrated phase separator for ultra high vacuum system

Publications (1)

Publication Number Publication Date
ATE282100T1 true ATE282100T1 (de) 2004-11-15

Family

ID=24683667

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01971298T ATE282100T1 (de) 2000-09-22 2001-09-21 Integrierte phasentrennvorrchtung für hoch- vacuumanlage

Country Status (7)

Country Link
US (1) US6367267B1 (de)
EP (1) EP1330561B1 (de)
JP (1) JP2004533910A (de)
AT (1) ATE282100T1 (de)
AU (1) AU2001291197A1 (de)
DE (1) DE60107108T2 (de)
WO (1) WO2002024983A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6718775B2 (en) * 2002-07-30 2004-04-13 Applied Epi, Inc. Dual chamber cooling system with cryogenic and non-cryogenic chambers for ultra high vacuum system
JP2010504434A (ja) * 2006-09-25 2010-02-12 ビーコ インスツルメンツ インコーポレイティド 真空蒸着装置用の断熱クライオパネル
WO2019161498A1 (en) * 2018-02-21 2019-08-29 Anyon Systems Inc. Apparatus and method for molecular beam epitaxy
CN113117606B (zh) * 2021-05-28 2022-07-15 中国科学技术大学 一种在真空束源腔中精密调节束源方向和位置的束源操纵装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE657551A (de) * 1964-01-16
US3371499A (en) * 1966-11-02 1968-03-05 Union Carbide Corp Cryosorption vacuum pumping system
SU515884A1 (ru) * 1974-04-30 1976-05-30 Ленинградский Ордена Ленина Политехнический Институт Им. М.И. Калинина Криогенный сверхвысоковакуумный насос
US4510760A (en) * 1984-03-02 1985-04-16 Messer Griesheim Industries, Inc. Compact integrated gas phase separator and subcooler and process
US4873833A (en) * 1988-11-23 1989-10-17 American Telephone Telegraph Company, At&T Bell Laboratories Apparatus comprising a high-vacuum chamber
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus
JPH0558777A (ja) * 1991-08-27 1993-03-09 Canon Inc 薄膜形成装置
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
US5788776A (en) * 1996-12-02 1998-08-04 Chorus Corporation Molecular beam epitaxy isolation tube system
JP3630562B2 (ja) * 1998-07-23 2005-03-16 シャープ株式会社 分子線エピタキシー装置

Also Published As

Publication number Publication date
EP1330561A2 (de) 2003-07-30
WO2002024983A9 (en) 2003-03-27
JP2004533910A (ja) 2004-11-11
DE60107108T2 (de) 2005-11-10
US6367267B1 (en) 2002-04-09
AU2001291197A1 (en) 2002-04-02
WO2002024983A2 (en) 2002-03-28
DE60107108D1 (de) 2004-12-16
EP1330561B1 (de) 2004-11-10
WO2002024983A3 (en) 2002-06-20

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties