ATE23409T1 - Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial. - Google Patents

Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial.

Info

Publication number
ATE23409T1
ATE23409T1 AT84107074T AT84107074T ATE23409T1 AT E23409 T1 ATE23409 T1 AT E23409T1 AT 84107074 T AT84107074 T AT 84107074T AT 84107074 T AT84107074 T AT 84107074T AT E23409 T1 ATE23409 T1 AT E23409T1
Authority
AT
Austria
Prior art keywords
group
hydrogen atom
alkyl group
formula
material made
Prior art date
Application number
AT84107074T
Other languages
German (de)
English (en)
Inventor
Paul Dr Stahlhofen
Original Assignee
Hoechst Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Ag filed Critical Hoechst Ag
Application granted granted Critical
Publication of ATE23409T1 publication Critical patent/ATE23409T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Printing Plates And Materials Therefor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Materials For Photolithography (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Holo Graphy (AREA)
  • Color Printing (AREA)
  • Developing Agents For Electrophotography (AREA)
AT84107074T 1983-06-29 1984-06-20 Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial. ATE23409T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3323343A DE3323343A1 (de) 1983-06-29 1983-06-29 Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
EP84107074A EP0131780B1 (de) 1983-06-29 1984-06-20 Lichtempfindliches Gemisch und daraus hergestelltes Kopiermaterial

Publications (1)

Publication Number Publication Date
ATE23409T1 true ATE23409T1 (de) 1986-11-15

Family

ID=6202631

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84107074T ATE23409T1 (de) 1983-06-29 1984-06-20 Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial.

Country Status (10)

Country Link
US (1) US4642282A (en, 2012)
EP (1) EP0131780B1 (en, 2012)
JP (1) JPS6021046A (en, 2012)
AT (1) ATE23409T1 (en, 2012)
AU (1) AU569530B2 (en, 2012)
BR (1) BR8403198A (en, 2012)
CA (1) CA1246378A (en, 2012)
DE (2) DE3323343A1 (en, 2012)
ES (1) ES8604362A1 (en, 2012)
ZA (1) ZA844740B (en, 2012)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3442756A1 (de) * 1984-11-23 1986-05-28 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen
JPH07109510B2 (ja) * 1985-04-02 1995-11-22 三菱化学株式会社 ポジ型フォトレジスト組成物
JPS62123444A (ja) * 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
US4931381A (en) * 1985-08-12 1990-06-05 Hoechst Celanese Corporation Image reversal negative working O-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment
US4929536A (en) * 1985-08-12 1990-05-29 Hoechst Celanese Corporation Image reversal negative working O-napthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
JPS6267181U (en, 2012) * 1985-10-17 1987-04-25
DE3730785A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3730787A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5024921A (en) * 1987-11-23 1991-06-18 Ocg Microelectronic Materials, Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image
US4970287A (en) * 1987-11-23 1990-11-13 Olin Hunt Specialty Products Inc. Thermally stable phenolic resin compositions with ortho, ortho methylene linkage
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US5130409A (en) * 1988-04-22 1992-07-14 Morton International, Inc. Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists
US4997734A (en) * 1988-08-02 1991-03-05 Morton International, Inc. Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate
JPH01293340A (ja) * 1988-05-20 1989-11-27 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
US5177172A (en) * 1988-05-31 1993-01-05 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5239122A (en) * 1988-05-31 1993-08-24 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
US5002851A (en) * 1988-05-31 1991-03-26 Olin Hunt Specialty Products, Inc. Light sensitive composition with o-quinone diazide and phenolic novolak resin made using methylol substituted trihydroxybenzophenone as reactant
US5254440A (en) * 1988-05-31 1993-10-19 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions and processes of forming resist images
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
US4992596A (en) * 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures
US4957846A (en) * 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
US4992356A (en) * 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Process of developing a radiation imaged product with trinuclear novolak oligomer having o-naphthoquinone diazide sulfonyl group
JPH02254450A (ja) * 1989-03-29 1990-10-15 Toshiba Corp レジスト
US5288587A (en) * 1989-09-05 1994-02-22 Sumitomo Chemical Co., Ltd. Radiation-sensitive positive resist composition comprising an o-quinone diazide, an alkali-soluble resin and a polyphenol compound
US5234795A (en) * 1989-09-07 1993-08-10 Ocg Microelectronic Materials, Inc. Process of developing an image-wise exposed resist-coated substrate
US5232819A (en) * 1989-09-07 1993-08-03 Ocg Microelectronic Materials, Inc. Selected block phenolic oligomers and their use in phenolic resin compositions and in radiation-sensitive resist compositions
WO1991004512A1 (en) * 1989-09-07 1991-04-04 Ocg Microelectronic Materials, Inc. Selected block copolymer novolak binder resins and their use in radiation-sensitive compositions
AU6140790A (en) * 1989-09-07 1991-04-08 Ocg Microelectronic Materials, Inc. Selected block phenolic oligomers and their use in phenolic resin compositions and in radiation-sensitive resist compositions
US5235022A (en) * 1989-09-07 1993-08-10 Ocg Microelectronic Materials, Inc. Selected block copolymer novolak binder resins
US5188921A (en) * 1989-09-07 1993-02-23 Ocg Microelectronic Materials, Inc. Selected block copolymer novolak binder resins in radiation-sensitive resist compositions
US5196289A (en) * 1989-09-07 1993-03-23 Ocg Microelectronic Materials, Inc. Selected block phenolic oligomers and their use in radiation-sensitive resist compositions
US5798422A (en) * 1994-08-25 1998-08-25 Mitsui Toatsu Chemicals, Inc. Aromatic hydroxycarboxylic acid resins and their use
US5652081A (en) * 1995-09-20 1997-07-29 Fuji Photo Film Co., Ltd. Positive working photoresist composition
US6103443A (en) * 1997-11-21 2000-08-15 Clariant Finance Lmited Photoresist composition containing a novel polymer
US20050037293A1 (en) * 2000-05-08 2005-02-17 Deutsch Albert S. Ink jet imaging of a lithographic printing plate
US20040025730A1 (en) * 2002-08-06 2004-02-12 Fromson Howard A. Method for imaging a lithographic printing plate
JP5968227B2 (ja) * 2010-12-27 2016-08-10 旭化成株式会社 アルカリ現像用感光性樹脂組成物、硬化レリーフパターン及び半導体装置
CN107329367B (zh) * 2011-12-09 2021-03-23 旭化成株式会社 感光性树脂组合物、固化浮雕图案的制造方法、半导体装置及显示体装置
JP6365952B2 (ja) * 2014-03-06 2018-08-01 エルジー・ケム・リミテッド オフセット印刷組成物、それを用いた印刷方法およびオフセット印刷組成物を含むパターン
KR101754901B1 (ko) * 2014-05-16 2017-07-06 제일모직 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR101852457B1 (ko) * 2015-11-12 2018-04-26 삼성에스디아이 주식회사 신규한 중합체를 포함하는 수지 조성물 및 이를 이용한 유기막
JP6809200B2 (ja) * 2016-12-19 2021-01-06 Dic株式会社 エポキシ樹脂、硬化性樹脂組成物及びその硬化物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130926C (en, 2012) * 1959-09-04
GB1150203A (en) * 1966-07-27 1969-04-30 Midland Silicones Ltd Polymeric Compositions
US3849392A (en) * 1969-05-20 1974-11-19 Kalle Ag Process for the production of polycondensation products of aromatic diazonium compounds
BE789196A (fr) * 1971-09-25 1973-03-22 Kalle Ag Matiere a copier photosensible
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2834059A1 (de) * 1978-08-03 1980-02-14 Hoechst Ag Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung
JPS561044A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition
DE3022473A1 (de) * 1980-06-14 1981-12-24 Hoechst Ag, 6000 Frankfurt Lichtempfindliches kopiermaterial und verfahren zu seiner herstellung
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3040156A1 (de) * 1980-10-24 1982-06-03 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und damit hergestelltes lichtempfindliches kopiermaterial
EP0054258B1 (en) * 1980-12-17 1986-03-05 Konica Corporation Photosensitive compositions
AU543462B2 (en) * 1981-10-23 1985-04-18 Hoechst A.G. Napthoquinone diazide sulphonic acid esters and light sensitive compositions containing them

Also Published As

Publication number Publication date
JPH0455298B2 (en, 2012) 1992-09-02
ES533562A0 (es) 1986-01-16
EP0131780B1 (de) 1986-11-05
ZA844740B (en) 1985-02-27
BR8403198A (pt) 1985-06-11
EP0131780A1 (de) 1985-01-23
ES8604362A1 (es) 1986-01-16
JPS6021046A (ja) 1985-02-02
AU2992384A (en) 1985-01-03
DE3323343A1 (de) 1985-01-10
DE3461229D1 (en) 1986-12-11
US4642282A (en) 1987-02-10
CA1246378A (en) 1988-12-13
AU569530B2 (en) 1988-02-04

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee