ATE215724T1 - Reduzierung von bitleitungsstörungen - Google Patents
Reduzierung von bitleitungsstörungenInfo
- Publication number
- ATE215724T1 ATE215724T1 AT97913848T AT97913848T ATE215724T1 AT E215724 T1 ATE215724 T1 AT E215724T1 AT 97913848 T AT97913848 T AT 97913848T AT 97913848 T AT97913848 T AT 97913848T AT E215724 T1 ATE215724 T1 AT E215724T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cells
- reducing line
- memory
- line disruptions
- disruptions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Production Of Liquid Hydrocarbon Mixture For Refining Petroleum (AREA)
- Separation By Low-Temperature Treatments (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/736,858 US5912837A (en) | 1996-10-28 | 1996-10-28 | Bitline disturb reduction |
PCT/US1997/019576 WO1998019310A1 (en) | 1996-10-28 | 1997-10-28 | Bitline disturb reduction |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE215724T1 true ATE215724T1 (de) | 2002-04-15 |
Family
ID=24961600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97913848T ATE215724T1 (de) | 1996-10-28 | 1997-10-28 | Reduzierung von bitleitungsstörungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US5912837A (de) |
EP (1) | EP0934592B1 (de) |
JP (1) | JP2000504458A (de) |
AT (1) | ATE215724T1 (de) |
AU (1) | AU5093498A (de) |
DE (1) | DE69711666T2 (de) |
WO (1) | WO1998019310A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7196929B1 (en) * | 1997-07-29 | 2007-03-27 | Micron Technology Inc | Method for operating a memory device having an amorphous silicon carbide gate insulator |
US7154153B1 (en) | 1997-07-29 | 2006-12-26 | Micron Technology, Inc. | Memory device |
US6031263A (en) * | 1997-07-29 | 2000-02-29 | Micron Technology, Inc. | DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate |
US6936849B1 (en) | 1997-07-29 | 2005-08-30 | Micron Technology, Inc. | Silicon carbide gate transistor |
US6794255B1 (en) | 1997-07-29 | 2004-09-21 | Micron Technology, Inc. | Carburized silicon gate insulators for integrated circuits |
US5886368A (en) | 1997-07-29 | 1999-03-23 | Micron Technology, Inc. | Transistor with silicon oxycarbide gate and methods of fabrication and use |
US6746893B1 (en) | 1997-07-29 | 2004-06-08 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6965123B1 (en) | 1997-07-29 | 2005-11-15 | Micron Technology, Inc. | Transistor with variable electron affinity gate and methods of fabrication and use |
US6038169A (en) * | 1999-03-18 | 2000-03-14 | Halo Lsi Design & Device Technology, Inc. | Read reference scheme for flash memory |
US6181599B1 (en) | 1999-04-13 | 2001-01-30 | Sandisk Corporation | Method for applying variable row BIAS to reduce program disturb in a flash memory storage array |
US6556503B2 (en) | 2001-08-21 | 2003-04-29 | Micron Technology, Inc. | Methods and apparatus for reducing decoder area |
US6597609B2 (en) | 2001-08-30 | 2003-07-22 | Micron Technology, Inc. | Non-volatile memory with test rows for disturb detection |
US6798694B2 (en) * | 2002-08-29 | 2004-09-28 | Micron Technology, Inc. | Method for reducing drain disturb in programming |
US7212435B2 (en) * | 2004-06-30 | 2007-05-01 | Micron Technology, Inc. | Minimizing adjacent wordline disturb in a memory device |
US7596028B2 (en) * | 2006-12-28 | 2009-09-29 | Macronix International Co., Ltd. | Variable program and program verification methods for a virtual ground memory in easing buried drain contacts |
US7706180B2 (en) * | 2007-09-25 | 2010-04-27 | Cypress Semiconductor Corporation | Method and apparatus for reduction of bit-line disturb and soft-erase in a trapped-charge memory |
US8045373B2 (en) * | 2007-10-02 | 2011-10-25 | Cypress Semiconductor Corporation | Method and apparatus for programming memory cell array |
US7876618B2 (en) * | 2009-03-23 | 2011-01-25 | Sandisk Corporation | Non-volatile memory with reduced leakage current for unselected blocks and method for operating same |
US8675405B1 (en) * | 2013-03-12 | 2014-03-18 | Cypress Semiconductor Corp. | Method to reduce program disturbs in non-volatile memory cells |
WO2016004388A1 (en) | 2014-07-03 | 2016-01-07 | Yale University | Circuitry for ferroelectric fet-based dynamic random access memory and non-volatile memory |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4451905A (en) * | 1981-12-28 | 1984-05-29 | Hughes Aircraft Company | Electrically erasable programmable read-only memory cell having a single transistor |
US5077691A (en) * | 1989-10-23 | 1991-12-31 | Advanced Micro Devices, Inc. | Flash EEPROM array with negative gate voltage erase operation |
TW231343B (de) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
US5317535A (en) * | 1992-06-19 | 1994-05-31 | Intel Corporation | Gate/source disturb protection for sixteen-bit flash EEPROM memory arrays |
JPH0729386A (ja) * | 1993-07-13 | 1995-01-31 | Hitachi Ltd | フラッシュメモリ及びマイクロコンピュータ |
KR0142510B1 (ko) * | 1993-10-29 | 1998-08-17 | 가네꼬 히사시 | 비휘발성 반도체 메모리 장치 |
US5412603A (en) * | 1994-05-06 | 1995-05-02 | Texas Instruments Incorporated | Method and circuitry for programming floating-gate memory cell using a single low-voltage supply |
-
1996
- 1996-10-28 US US08/736,858 patent/US5912837A/en not_active Expired - Lifetime
-
1997
- 1997-10-28 AT AT97913848T patent/ATE215724T1/de not_active IP Right Cessation
- 1997-10-28 EP EP97913848A patent/EP0934592B1/de not_active Expired - Lifetime
- 1997-10-28 AU AU50934/98A patent/AU5093498A/en not_active Abandoned
- 1997-10-28 WO PCT/US1997/019576 patent/WO1998019310A1/en active IP Right Grant
- 1997-10-28 DE DE69711666T patent/DE69711666T2/de not_active Expired - Lifetime
- 1997-10-28 JP JP10520711A patent/JP2000504458A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0934592B1 (de) | 2002-04-03 |
DE69711666T2 (de) | 2002-11-28 |
EP0934592A1 (de) | 1999-08-11 |
WO1998019310A1 (en) | 1998-05-07 |
US5912837A (en) | 1999-06-15 |
AU5093498A (en) | 1998-05-22 |
DE69711666D1 (de) | 2002-05-08 |
JP2000504458A (ja) | 2000-04-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |