DE69711666D1 - Reduzierung von bitleitungsstörungen - Google Patents

Reduzierung von bitleitungsstörungen

Info

Publication number
DE69711666D1
DE69711666D1 DE69711666T DE69711666T DE69711666D1 DE 69711666 D1 DE69711666 D1 DE 69711666D1 DE 69711666 T DE69711666 T DE 69711666T DE 69711666 T DE69711666 T DE 69711666T DE 69711666 D1 DE69711666 D1 DE 69711666D1
Authority
DE
Germany
Prior art keywords
memory cells
reduction
memory
bitline
failure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69711666T
Other languages
English (en)
Other versions
DE69711666T2 (de
Inventor
Vinod Lakhani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69711666D1 publication Critical patent/DE69711666D1/de
Publication of DE69711666T2 publication Critical patent/DE69711666T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Production Of Liquid Hydrocarbon Mixture For Refining Petroleum (AREA)
  • Separation By Low-Temperature Treatments (AREA)
  • Glass Compositions (AREA)
DE69711666T 1996-10-28 1997-10-28 Reduzierung von bitleitungsstörungen Expired - Lifetime DE69711666T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/736,858 US5912837A (en) 1996-10-28 1996-10-28 Bitline disturb reduction
PCT/US1997/019576 WO1998019310A1 (en) 1996-10-28 1997-10-28 Bitline disturb reduction

Publications (2)

Publication Number Publication Date
DE69711666D1 true DE69711666D1 (de) 2002-05-08
DE69711666T2 DE69711666T2 (de) 2002-11-28

Family

ID=24961600

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69711666T Expired - Lifetime DE69711666T2 (de) 1996-10-28 1997-10-28 Reduzierung von bitleitungsstörungen

Country Status (7)

Country Link
US (1) US5912837A (de)
EP (1) EP0934592B1 (de)
JP (1) JP2000504458A (de)
AT (1) ATE215724T1 (de)
AU (1) AU5093498A (de)
DE (1) DE69711666T2 (de)
WO (1) WO1998019310A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US5886368A (en) 1997-07-29 1999-03-23 Micron Technology, Inc. Transistor with silicon oxycarbide gate and methods of fabrication and use
US6031263A (en) 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US6038169A (en) * 1999-03-18 2000-03-14 Halo Lsi Design & Device Technology, Inc. Read reference scheme for flash memory
US6181599B1 (en) 1999-04-13 2001-01-30 Sandisk Corporation Method for applying variable row BIAS to reduce program disturb in a flash memory storage array
US6556503B2 (en) 2001-08-21 2003-04-29 Micron Technology, Inc. Methods and apparatus for reducing decoder area
US6597609B2 (en) 2001-08-30 2003-07-22 Micron Technology, Inc. Non-volatile memory with test rows for disturb detection
US6798694B2 (en) * 2002-08-29 2004-09-28 Micron Technology, Inc. Method for reducing drain disturb in programming
US7212435B2 (en) * 2004-06-30 2007-05-01 Micron Technology, Inc. Minimizing adjacent wordline disturb in a memory device
US7596028B2 (en) * 2006-12-28 2009-09-29 Macronix International Co., Ltd. Variable program and program verification methods for a virtual ground memory in easing buried drain contacts
US7706180B2 (en) * 2007-09-25 2010-04-27 Cypress Semiconductor Corporation Method and apparatus for reduction of bit-line disturb and soft-erase in a trapped-charge memory
US8045373B2 (en) * 2007-10-02 2011-10-25 Cypress Semiconductor Corporation Method and apparatus for programming memory cell array
US7876618B2 (en) * 2009-03-23 2011-01-25 Sandisk Corporation Non-volatile memory with reduced leakage current for unselected blocks and method for operating same
US8675405B1 (en) * 2013-03-12 2014-03-18 Cypress Semiconductor Corp. Method to reduce program disturbs in non-volatile memory cells
WO2016004388A1 (en) 2014-07-03 2016-01-07 Yale University Circuitry for ferroelectric fet-based dynamic random access memory and non-volatile memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451905A (en) * 1981-12-28 1984-05-29 Hughes Aircraft Company Electrically erasable programmable read-only memory cell having a single transistor
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
TW231343B (de) * 1992-03-17 1994-10-01 Hitachi Seisakusyo Kk
US5317535A (en) * 1992-06-19 1994-05-31 Intel Corporation Gate/source disturb protection for sixteen-bit flash EEPROM memory arrays
JPH0729386A (ja) * 1993-07-13 1995-01-31 Hitachi Ltd フラッシュメモリ及びマイクロコンピュータ
KR0142510B1 (ko) * 1993-10-29 1998-08-17 가네꼬 히사시 비휘발성 반도체 메모리 장치
US5412603A (en) * 1994-05-06 1995-05-02 Texas Instruments Incorporated Method and circuitry for programming floating-gate memory cell using a single low-voltage supply

Also Published As

Publication number Publication date
DE69711666T2 (de) 2002-11-28
ATE215724T1 (de) 2002-04-15
EP0934592B1 (de) 2002-04-03
WO1998019310A1 (en) 1998-05-07
EP0934592A1 (de) 1999-08-11
US5912837A (en) 1999-06-15
JP2000504458A (ja) 2000-04-11
AU5093498A (en) 1998-05-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition