ATE211585T1 - Neues verfahren zum chemisch mechanischen polieren von isolationsschichten aus silizium oder silizium enthaltenden materialien - Google Patents
Neues verfahren zum chemisch mechanischen polieren von isolationsschichten aus silizium oder silizium enthaltenden materialienInfo
- Publication number
- ATE211585T1 ATE211585T1 AT97402355T AT97402355T ATE211585T1 AT E211585 T1 ATE211585 T1 AT E211585T1 AT 97402355 T AT97402355 T AT 97402355T AT 97402355 T AT97402355 T AT 97402355T AT E211585 T1 ATE211585 T1 AT E211585T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- mechanical polishing
- abrasive
- colloidal silica
- chemical mechanical
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
- 238000009413 insulation Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000008119 colloidal silica Substances 0.000 abstract 4
- 150000003377 silicon compounds Chemical class 0.000 abstract 4
- 239000004744 fabric Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 239000000725 suspension Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9612892A FR2754937B1 (fr) | 1996-10-23 | 1996-10-23 | Nouveau procede de polissage mecano-chimique de couches de materiaux isolants a base de derives du silicium ou de silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE211585T1 true ATE211585T1 (de) | 2002-01-15 |
Family
ID=9496922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT97402355T ATE211585T1 (de) | 1996-10-23 | 1997-10-07 | Neues verfahren zum chemisch mechanischen polieren von isolationsschichten aus silizium oder silizium enthaltenden materialien |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6043159A (de) |
| EP (1) | EP0838845B1 (de) |
| JP (1) | JP3612192B2 (de) |
| KR (1) | KR100499184B1 (de) |
| CN (1) | CN1083618C (de) |
| AT (1) | ATE211585T1 (de) |
| DE (1) | DE69709828T2 (de) |
| ES (1) | ES2168591T3 (de) |
| FR (1) | FR2754937B1 (de) |
| MY (1) | MY121626A (de) |
| TW (1) | TW400568B (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2781922B1 (fr) | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
| FR2785614B1 (fr) * | 1998-11-09 | 2001-01-26 | Clariant France Sa | Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium |
| FR2789998B1 (fr) * | 1999-02-18 | 2005-10-07 | Clariant France Sa | Nouvelle composition de polissage mecano-chimique d'une couche en un materiau conducteur d'aluminium ou d'alliage d'aluminium |
| FR2792643B1 (fr) | 1999-04-22 | 2001-07-27 | Clariant France Sa | Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique |
| US6159077A (en) * | 1999-07-30 | 2000-12-12 | Corning Incorporated | Colloidal silica polishing abrasive |
| US6306768B1 (en) | 1999-11-17 | 2001-10-23 | Micron Technology, Inc. | Method for planarizing microelectronic substrates having apertures |
| US7229927B1 (en) * | 1999-11-23 | 2007-06-12 | Corning Incorporated | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics |
| AU2001256208A1 (en) * | 2000-03-31 | 2001-10-15 | Bayer Aktiengesellschaft | Polishing agent and method for producing planar layers |
| US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
| FR2835844B1 (fr) * | 2002-02-13 | 2006-12-15 | Clariant | Procede de polissage mecano-chimique de substrats metalliques |
| US7968465B2 (en) * | 2003-08-14 | 2011-06-28 | Dupont Air Products Nanomaterials Llc | Periodic acid compositions for polishing ruthenium/low K substrates |
| JP2005268667A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
| US9012327B2 (en) * | 2013-09-18 | 2015-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Low defect chemical mechanical polishing composition |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3620978A (en) * | 1968-07-18 | 1971-11-16 | Du Pont | Process for preparing stable positively charged alumina-coated silica sols |
| US4689656A (en) * | 1984-06-25 | 1987-08-25 | International Business Machines Corporation | Method for forming a void free isolation pattern and resulting structure |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5382272A (en) * | 1993-09-03 | 1995-01-17 | Rodel, Inc. | Activated polishing compositions |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| US5525191A (en) * | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
-
1996
- 1996-10-23 FR FR9612892A patent/FR2754937B1/fr not_active Expired - Lifetime
-
1997
- 1997-09-30 US US08/941,188 patent/US6043159A/en not_active Expired - Lifetime
- 1997-10-07 AT AT97402355T patent/ATE211585T1/de active
- 1997-10-07 ES ES97402355T patent/ES2168591T3/es not_active Expired - Lifetime
- 1997-10-07 DE DE69709828T patent/DE69709828T2/de not_active Expired - Lifetime
- 1997-10-07 MY MYPI97004688A patent/MY121626A/en unknown
- 1997-10-07 EP EP97402355A patent/EP0838845B1/de not_active Expired - Lifetime
- 1997-10-18 TW TW086115391A patent/TW400568B/zh not_active IP Right Cessation
- 1997-10-20 JP JP30646797A patent/JP3612192B2/ja not_active Expired - Lifetime
- 1997-10-22 CN CN97121160A patent/CN1083618C/zh not_active Expired - Lifetime
- 1997-10-22 KR KR1019970054183A patent/KR100499184B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2754937A1 (fr) | 1998-04-24 |
| EP0838845A1 (de) | 1998-04-29 |
| US6043159A (en) | 2000-03-28 |
| EP0838845B1 (de) | 2002-01-02 |
| JPH1131675A (ja) | 1999-02-02 |
| FR2754937B1 (fr) | 1999-01-15 |
| CN1083618C (zh) | 2002-04-24 |
| DE69709828T2 (de) | 2002-09-05 |
| DE69709828D1 (de) | 2002-02-28 |
| KR19980033056A (ko) | 1998-07-25 |
| ES2168591T3 (es) | 2002-06-16 |
| CN1187406A (zh) | 1998-07-15 |
| TW400568B (en) | 2000-08-01 |
| KR100499184B1 (ko) | 2005-09-26 |
| JP3612192B2 (ja) | 2005-01-19 |
| MY121626A (en) | 2006-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification | ||
| EEIH | Change in the person of patent owner |