ATE187278T1 - Photoelektrischer umwandlungsanordnung - Google Patents

Photoelektrischer umwandlungsanordnung

Info

Publication number
ATE187278T1
ATE187278T1 AT93108415T AT93108415T ATE187278T1 AT E187278 T1 ATE187278 T1 AT E187278T1 AT 93108415 T AT93108415 T AT 93108415T AT 93108415 T AT93108415 T AT 93108415T AT E187278 T1 ATE187278 T1 AT E187278T1
Authority
AT
Austria
Prior art keywords
photoelectric conversion
carrier multiplication
conversion device
multiplication layer
layer
Prior art date
Application number
AT93108415T
Other languages
English (en)
Inventor
Shigetoshi Sugawa
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE187278T1 publication Critical patent/ATE187278T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H01L27/1465—Infrared imagers of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT93108415T 1992-05-27 1993-05-25 Photoelektrischer umwandlungsanordnung ATE187278T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4158889A JPH05335615A (ja) 1992-05-27 1992-05-27 光電変換装置

Publications (1)

Publication Number Publication Date
ATE187278T1 true ATE187278T1 (de) 1999-12-15

Family

ID=15681599

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93108415T ATE187278T1 (de) 1992-05-27 1993-05-25 Photoelektrischer umwandlungsanordnung

Country Status (5)

Country Link
US (1) US5869851A (de)
EP (1) EP0571944B1 (de)
JP (1) JPH05335615A (de)
AT (1) ATE187278T1 (de)
DE (1) DE69327130T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60042666D1 (de) * 1999-01-14 2009-09-17 Panasonic Corp Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
US6369426B2 (en) 2000-04-27 2002-04-09 Infineon Technologies North America Corp. Transistor with integrated photodetector for conductivity modulation
US6696710B2 (en) 2001-02-27 2004-02-24 Agilent Technologies, Inc. Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
US7453129B2 (en) * 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
KR100604865B1 (ko) * 2004-06-08 2006-07-26 삼성전자주식회사 신호 대 잡음비가 향상된 ａｐｓ 셀
KR101435517B1 (ko) * 2008-05-28 2014-08-29 삼성전자주식회사 광검출 분자를 이용한 이미지 센서 및 그 구동방법
KR101428147B1 (ko) * 2011-12-18 2014-08-08 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
CN105637657B (zh) * 2013-08-28 2017-12-15 华为技术有限公司 雪崩光电二极管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
JPH0760888B2 (ja) * 1985-06-12 1995-06-28 キヤノン株式会社 光電変換装置
JPH0654957B2 (ja) * 1985-11-13 1994-07-20 キヤノン株式会社 光電変換装置
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
US4866293A (en) * 1986-12-09 1989-09-12 Canon Kabushiki Kaisha Photoelectric converting apparatus to prevent the outflow of excess carriers
EP0277016B1 (de) * 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photovoltaischer Wandler
JPH0234977A (ja) * 1988-07-25 1990-02-05 Matsushita Electric Ind Co Ltd 光検出器及びその製造法
EP0437633B1 (de) * 1989-08-04 2000-11-02 Canon Kabushiki Kaisha Photoelektrischer umwandler
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
DE69127644T2 (de) * 1990-03-02 1998-02-05 Canon Kk Fotoelektrische Übertragungsvorrichtung
US5162885A (en) * 1990-09-07 1992-11-10 Georgia Tech Research Corporation Acoustic charge transport imager

Also Published As

Publication number Publication date
DE69327130T2 (de) 2000-06-21
EP0571944A1 (de) 1993-12-01
DE69327130D1 (de) 2000-01-05
JPH05335615A (ja) 1993-12-17
EP0571944B1 (de) 1999-12-01
US5869851A (en) 1999-02-09

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